Journal ArticleDOI
Scattering of electrons at threading dislocations in GaN
TLDR
In this paper, a model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed and the statistics of trap occupancy at different doping levels are investigated.Abstract:
A model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed. Filled traps along threading dislocation lines act as Coulomb scattering centers. The statistics of trap occupancy at different doping levels are investigated. The theoretical transverse mobility from Coulomb scattering at charged traps is compared to experimental data. Due to the repulsive potential around the charged dislocation lines, electron transport parallel to the dislocations is unaffected by the scattering at charged dislocation lines.read more
Citations
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Proceedings ArticleDOI
Recombination and diffusion processes in polar and nonpolar bulk GaN investigated by time-resolved photoluminescence and nonlinear optical techniques
Kęstutis Jarašiūnas,Patrik Ščajev,Saulius Nargelas,Ramūnas Aleksiejūnas,Jacob H. Leach,Tania Paskova,Serdal Okur,Ümit Özgür,Hadis Morkoç +8 more
TL;DR: In this paper, the authors investigated the diffusion-governed carrier flow to interface defects at GaN hexagons, which act as centers of nonradiative recombination and revealed a strong impact of vertical carrier diffusion, surface recombination, and reabsorption processes.
Journal ArticleDOI
Dry and wet etching for group iii - nitrides
TL;DR: In this article, a review of the state-of-the-art dry and wet ion etch methods for group-III nitrides has been presented, and an alternative path to obtaining high etch rates without ion-induced damage has been proposed.
Journal ArticleDOI
The road ahead for ultrawide bandgap solar-blind UV photodetectors
TL;DR: In this paper , a broad assessment of the device performance in terms of its various parameters is done vis-à-vis the dependence on the material quality, and a new comprehensive figure of merit (CFOM) is introduced to benchmark photodetectors by accounting for their three most critical performance parameters.
Journal ArticleDOI
Microstructural properties of InGaN/GaN light-emitting diode structures with different In content grown by MOCVD
TL;DR: The structural and morphological properties of metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN light-emitting diode (LED) structures with different In content have been studied by high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FTIR), and Photoluminescence (PL) as discussed by the authors.
Journal ArticleDOI
Studies of field-induced nonequilibrium electron transport in an InxGa1−xN (x≅0.6) epilayer grown on GaN
TL;DR: In this paper, the field-induced electron transport in an InxGa1−xN (x≅0.6) sample grown on GaN has been studied by sub-picosecond Raman spectroscopy.
References
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Journal ArticleDOI
Gallium vacancies and the yellow luminescence in GaN
TL;DR: In this article, the authors investigated native defects and native defect impurity complexes as candidate sources for the yellow luminescence in GaN and found strong evidence that the Ga vacancy (VGa) is responsible.
Journal ArticleDOI
High dislocation densities in high efficiency GaN‐based light‐emitting diodes
TL;DR: In this article, the electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied.
Journal ArticleDOI
Theory of Impurity Scattering in Semiconductors
TL;DR: In this paper, it was shown that the simple theory of lattice scattering alone cannot explain the temperature dependence of the resistivity of germanium semiconductors and that another probable source of resistance is scattering by ionized impurity centers.
Journal ArticleDOI
The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction
TL;DR: In this paper, the theory of dislocation density measurement from rocking curves is extended to the case of (001) zinc-blende semiconductors, and it is shown that the measurement of several ( hkl ) rocking curve widths with a particular X-ray wavelength allows the calculation of the dislocations density by two independent techniques, thus allowing for a check of self-consistency.
Journal ArticleDOI
LXXXVII. Theory of dislocations in germanium
TL;DR: In this paper, a simple model was proposed to identify dislocation acceptors with dangling unpaired electrons on the edge of the extra atomic plane of a dislocation having some edge component.