Journal ArticleDOI
Scattering of electrons at threading dislocations in GaN
TLDR
In this paper, a model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed and the statistics of trap occupancy at different doping levels are investigated.Abstract:
A model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed. Filled traps along threading dislocation lines act as Coulomb scattering centers. The statistics of trap occupancy at different doping levels are investigated. The theoretical transverse mobility from Coulomb scattering at charged traps is compared to experimental data. Due to the repulsive potential around the charged dislocation lines, electron transport parallel to the dislocations is unaffected by the scattering at charged dislocation lines.read more
Citations
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Control of ion content and nitrogen species using a mixed chemistry plasma for GaN grown at extremely high growth rates >9 μm/h by plasma-assisted molecular beam epitaxy
TL;DR: In this article, a modified nitrogen plasma source, plasma assisted molecular beam epitaxy (PAMBE) has been used to achieve higher growth rates in GaN using a higher conductance aperture plate, combined with higher nitrogen flow and added pumping capacity.
Journal ArticleDOI
The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate
TL;DR: In this article, the effect of in-situ substrate nitridation time on crystalline quality of GaN films grown on Si (111) substrates by metal organic chemical vapor deposition (MOCVD) was investigated.
Journal ArticleDOI
Ubiquitous Spin-Orbit Coupling in a Screw Dislocation with High Spin Coherency.
Lin Hu,Huaqing Huang,Zhengfei Wang,Wei Jiang,Xiaojuan Ni,Yinong Zhou,V. Zielasek,Max G. Lagally,Bing Huang,Feng Liu +9 more
TL;DR: In this article, the authors theoretically demonstrate that screw dislocation (SD), a 1D topological defect widely present in semiconductors, exhibits ubiquitously a new form of spin-orbit coupling (SOC) effect.
Journal ArticleDOI
Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN
TL;DR: At a growth temperature of 665 °C the residual charge carrier concentration is decreased to below 1015 cm−3, resulting in insulating behavior and thus making the material suitable for beyond state-of-the-art device applications.
Journal ArticleDOI
Thermal and electrical properties of high‐quality freestanding GaN wafers with high carrier concentration
TL;DR: In this article, the thermal and electrical properties of GaN were investigated using high-quality freestanding crystals in the high carrier concentration region between 1.0x1018 and 1.24x1019 cm-3.
References
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Gallium vacancies and the yellow luminescence in GaN
TL;DR: In this article, the authors investigated native defects and native defect impurity complexes as candidate sources for the yellow luminescence in GaN and found strong evidence that the Ga vacancy (VGa) is responsible.
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High dislocation densities in high efficiency GaN‐based light‐emitting diodes
TL;DR: In this article, the electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied.
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Theory of Impurity Scattering in Semiconductors
TL;DR: In this paper, it was shown that the simple theory of lattice scattering alone cannot explain the temperature dependence of the resistivity of germanium semiconductors and that another probable source of resistance is scattering by ionized impurity centers.
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The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction
TL;DR: In this paper, the theory of dislocation density measurement from rocking curves is extended to the case of (001) zinc-blende semiconductors, and it is shown that the measurement of several ( hkl ) rocking curve widths with a particular X-ray wavelength allows the calculation of the dislocations density by two independent techniques, thus allowing for a check of self-consistency.
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LXXXVII. Theory of dislocations in germanium
TL;DR: In this paper, a simple model was proposed to identify dislocation acceptors with dangling unpaired electrons on the edge of the extra atomic plane of a dislocation having some edge component.