Journal ArticleDOI
Scattering of electrons at threading dislocations in GaN
TLDR
In this paper, a model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed and the statistics of trap occupancy at different doping levels are investigated.Abstract:
A model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed. Filled traps along threading dislocation lines act as Coulomb scattering centers. The statistics of trap occupancy at different doping levels are investigated. The theoretical transverse mobility from Coulomb scattering at charged traps is compared to experimental data. Due to the repulsive potential around the charged dislocation lines, electron transport parallel to the dislocations is unaffected by the scattering at charged dislocation lines.read more
Citations
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Journal ArticleDOI
Quantitative analysis of nanoscale electronic properties in an AlxGa1−xN/GaN heterostructure field-effect transistor structure
TL;DR: In this paper, the authors used local dC/dV spectroscopy performed in a scanning capacitance microscope to map, quantitatively and with high spatial resolution, lateral variations in the threshold voltage of an AlxGa1−xN/GaN heterostructure field effect transistor epitaxial layer structure.
Journal ArticleDOI
Growth and characterization of Cr-doped semi-insulating GaN templates prepared by radio-frequency plasma-assisted molecular beam epitaxy
TL;DR: In this article, a semi-insulating GaN template was grown using radiofrequency plasma assisted molecular beam epitaxy (RF-MBE) and the results indicated that Cr doping did not affect the crystalline orientation of the GaN film but introduced more threading dislocations, and step-graded GaN/AlxGa1−xN superlattices (SLs) played an important role in hindering the penetration of the threads.
Journal ArticleDOI
Laser-Induced Liftoff And Laser Patterning Of Large Free-Standing GaN Substrates
TL;DR: In this article, free-standing GaN crystals are produced from 200-300 µn thick GaN films grown on 2 inch sapphire substrates by hydride vapor phase epitaxy.
Book ChapterDOI
Substrates and Materials
TL;DR: The choice of substrate and the material requirements for GaN-based power transistors for switching applications strongly depend on the device architecture, making a lateral device layout on a foreign substrate such as silicon, which is available in wafer sizes up to 12″, currently more attractive.
Journal ArticleDOI
2DEGs formed in AlN/GaN HEMT structures with AlN grown at low temperature
Caroline E. Reilly,Nirupam Hatui,Thomas E. Mates,Shuji Nakamura,Steven P. DenBaars,Stacia Keller +5 more
TL;DR: In this article, the growth of AlN was conducted at temperatures below 550°C via MOCVD using a flow-modulated epitaxy scheme, and their morphological, compositional, and electronic properties of these films were investigated.
References
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Journal ArticleDOI
Gallium vacancies and the yellow luminescence in GaN
TL;DR: In this article, the authors investigated native defects and native defect impurity complexes as candidate sources for the yellow luminescence in GaN and found strong evidence that the Ga vacancy (VGa) is responsible.
Journal ArticleDOI
High dislocation densities in high efficiency GaN‐based light‐emitting diodes
TL;DR: In this article, the electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied.
Journal ArticleDOI
Theory of Impurity Scattering in Semiconductors
TL;DR: In this paper, it was shown that the simple theory of lattice scattering alone cannot explain the temperature dependence of the resistivity of germanium semiconductors and that another probable source of resistance is scattering by ionized impurity centers.
Journal ArticleDOI
The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction
TL;DR: In this paper, the theory of dislocation density measurement from rocking curves is extended to the case of (001) zinc-blende semiconductors, and it is shown that the measurement of several ( hkl ) rocking curve widths with a particular X-ray wavelength allows the calculation of the dislocations density by two independent techniques, thus allowing for a check of self-consistency.
Journal ArticleDOI
LXXXVII. Theory of dislocations in germanium
TL;DR: In this paper, a simple model was proposed to identify dislocation acceptors with dangling unpaired electrons on the edge of the extra atomic plane of a dislocation having some edge component.