Journal ArticleDOI
Scattering of electrons at threading dislocations in GaN
TLDR
In this paper, a model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed and the statistics of trap occupancy at different doping levels are investigated.Abstract:
A model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed. Filled traps along threading dislocation lines act as Coulomb scattering centers. The statistics of trap occupancy at different doping levels are investigated. The theoretical transverse mobility from Coulomb scattering at charged traps is compared to experimental data. Due to the repulsive potential around the charged dislocation lines, electron transport parallel to the dislocations is unaffected by the scattering at charged dislocation lines.read more
Citations
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Dislocation-independent mobility in lattice-mismatched epitaxy: application to GaN
TL;DR: In this paper, a simple postulate, N D = α ( N dis / c ), where c is the lattice constant and α a constant of order 1-2, predicts a nearly constant low-temperature mobility, independent of N dis.
Journal ArticleDOI
Unintentional doping in GaN
Tongtong Zhu,Rachel A. Oliver +1 more
TL;DR: The use of scanning capacitance microscopy has demonstrated that this layer forms due to the high rate of incorporation of gas phase impurities, primarily oxygen, during the early stages of growth, when N-rich semi-polar facets are often present.
Journal ArticleDOI
GaN Materials for High Power Microwave Amplifiers
TL;DR: In this article, the key parameters of GaN for use in microwave power amplifiers are presented, and the electron-scattering effect of dislocations are presented for 2 DEG in HEMT devices.
Journal ArticleDOI
Vertically Conductive MoS2 Spiral Pyramid.
TL;DR: In this article, a threading dislocation was used to carry helical current in the vertical direction and greatly enhances the vertical conductance in the MoS2 multilayer samples.
Journal ArticleDOI
Growth of p-type and n-type m-plane GaN by molecular beam epitaxy
TL;DR: In this article, a phase-pure, m-plane GaN film exhibiting a large anisotropy in film mosaic (similar to 0.2 degrees full width at half maximum, x-ray rocking curve scan taken parallel to [112 ($) over bar0] versus similar to 2 degrees parallel to the [0001]) was grown on 6H mplane SiC substrates, achieving maximum hole concentrations of similar to 7x10(18) cm(-3) were achieved with p-type conductivities as high as similar to 5 Omega(-1) cm (-1)
References
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Journal ArticleDOI
Gallium vacancies and the yellow luminescence in GaN
TL;DR: In this article, the authors investigated native defects and native defect impurity complexes as candidate sources for the yellow luminescence in GaN and found strong evidence that the Ga vacancy (VGa) is responsible.
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High dislocation densities in high efficiency GaN‐based light‐emitting diodes
TL;DR: In this article, the electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied.
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Theory of Impurity Scattering in Semiconductors
TL;DR: In this paper, it was shown that the simple theory of lattice scattering alone cannot explain the temperature dependence of the resistivity of germanium semiconductors and that another probable source of resistance is scattering by ionized impurity centers.
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The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction
TL;DR: In this paper, the theory of dislocation density measurement from rocking curves is extended to the case of (001) zinc-blende semiconductors, and it is shown that the measurement of several ( hkl ) rocking curve widths with a particular X-ray wavelength allows the calculation of the dislocations density by two independent techniques, thus allowing for a check of self-consistency.
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LXXXVII. Theory of dislocations in germanium
TL;DR: In this paper, a simple model was proposed to identify dislocation acceptors with dangling unpaired electrons on the edge of the extra atomic plane of a dislocation having some edge component.