Journal ArticleDOI
Scattering of electrons at threading dislocations in GaN
TLDR
In this paper, a model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed and the statistics of trap occupancy at different doping levels are investigated.Abstract:
A model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed. Filled traps along threading dislocation lines act as Coulomb scattering centers. The statistics of trap occupancy at different doping levels are investigated. The theoretical transverse mobility from Coulomb scattering at charged traps is compared to experimental data. Due to the repulsive potential around the charged dislocation lines, electron transport parallel to the dislocations is unaffected by the scattering at charged dislocation lines.read more
Citations
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Journal ArticleDOI
Theoretical simulation of free carrier mobility collapse in GaN in terms of dislocation walls
TL;DR: In this paper, the authors show that the particular mobility behavior versus carrier density in MOVPE GaN materials, characterized by a mobility collapse at low dopant densities, cannot be simply interpreted in terms of dislocation scattering or trapping mechanisms, but that it is also controlled by the collective effect of dislocations walls (the columnar structure).
Patent
Gallium nitride rectifying device
TL;DR: A gallium nitride rectifying device includes a p-type gallium-nitride-based semiconductor layer and an n-type GCN-based layer, the two layers forming a pn junction with each other.
Journal ArticleDOI
Dissociation of trimethylgallium on the ZrB2(0001) surface
TL;DR: In this paper, the dissociative adsorption of trimethylgallium (TMG) on the ZrB2(0001) surface has been studied using X-ray photoelectron spectroscopy and reflection absorption infrared spectrographs.
Book ChapterDOI
Nanostructured Bulk Thermoelectric Materials for Energy Harvesting
Zi Qian Liu,Takao Mori +1 more
Journal ArticleDOI
Detection of Subsurface, Nanometer-Scale Crystallographic Defects by Nonlinear Light Scattering and Localization
Farbod Shafiei,Tommaso Orzali,Alexey Vert,Mohammad-Ali Miri,Mohammad-Ali Miri,Pui Yee Hung,Man Hoi Wong,Andrea Alù,Andrea Alù,Andrea Alù,G. Bersuker,Michael C. Downer +11 more
References
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Journal ArticleDOI
Gallium vacancies and the yellow luminescence in GaN
TL;DR: In this article, the authors investigated native defects and native defect impurity complexes as candidate sources for the yellow luminescence in GaN and found strong evidence that the Ga vacancy (VGa) is responsible.
Journal ArticleDOI
High dislocation densities in high efficiency GaN‐based light‐emitting diodes
TL;DR: In this article, the electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied.
Journal ArticleDOI
Theory of Impurity Scattering in Semiconductors
TL;DR: In this paper, it was shown that the simple theory of lattice scattering alone cannot explain the temperature dependence of the resistivity of germanium semiconductors and that another probable source of resistance is scattering by ionized impurity centers.
Journal ArticleDOI
The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction
TL;DR: In this paper, the theory of dislocation density measurement from rocking curves is extended to the case of (001) zinc-blende semiconductors, and it is shown that the measurement of several ( hkl ) rocking curve widths with a particular X-ray wavelength allows the calculation of the dislocations density by two independent techniques, thus allowing for a check of self-consistency.
Journal ArticleDOI
LXXXVII. Theory of dislocations in germanium
TL;DR: In this paper, a simple model was proposed to identify dislocation acceptors with dangling unpaired electrons on the edge of the extra atomic plane of a dislocation having some edge component.