Journal ArticleDOI
Scattering of electrons at threading dislocations in GaN
TLDR
In this paper, a model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed and the statistics of trap occupancy at different doping levels are investigated.Abstract:
A model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed. Filled traps along threading dislocation lines act as Coulomb scattering centers. The statistics of trap occupancy at different doping levels are investigated. The theoretical transverse mobility from Coulomb scattering at charged traps is compared to experimental data. Due to the repulsive potential around the charged dislocation lines, electron transport parallel to the dislocations is unaffected by the scattering at charged dislocation lines.read more
Citations
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Book ChapterDOI
AlGaN Epitaxial Technology
Li He,Dingjiang Yang,Guoqiang Ni +2 more
TL;DR: In recent years, rapid developments have occurred in GaN and related materials (including AlN, AlGaN, GaN, InGaN and InN), thus becoming the third generation of semiconductor material as mentioned in this paper.
Journal ArticleDOI
Optical Properties of A-Plane InGaN/GaN Multiple Quantum Wells Grown on Nanorod Lateral Overgrowth Templates
TL;DR: In this paper, a-plane InGaN/GaN multiple-quantum wells (MQWs) were grown on a series of nanorod epitaxial lateral overgrowth (NRELOG) templates with varied depth.
Journal ArticleDOI
Dislocation effects in FinFETs for different III-V compound semiconductors
Ji-Hyun Hur,Sanghun Jeon +1 more
TL;DR: In this paper, a theoretical model that describes the degradation in carrier mobility caused by charged dislocations in nanometer-sized, quantum-confined III-V compound semiconductor fin-shaped field effect transistors is presented.
Book ChapterDOI
Homoepitaxy of GaN Light-Emitting Diodes
Abstract: Light-emitting diodes (LEDs) employing heterostructures of group-III nitrides are a prime contender for the realization of energy-efficient solid-state lighting (US Department of Energy, Solid-State Lighting Program, http://www.netl.doe.gov/ssl; Basic Research Needs or Solid-State Lighting, Report of the Basic Energy Sciences Workshop on Solid-State Lighting, May 22–24, 2006. www.sc.doe.gov/bes/reports/files/SSL_rpt.Pdf). As a direct bandgap material, alloys of GaxInxN can be tuned to emit light covering every portion of the visible spectrum. White light of good color-rendering quality (additive white) requires a more or less continuous spectrum and can be obtained by the combination of various such light sources. On the other hand, image information encoded in red-green-blue (RGB) colors can be reproduced by three highly monochromatic light sources of red, green, and blue. Current best practices in LED lighting employ blue or near-UV LEDs to excite a phosphor that downconverts those photons into longer wavelength light dependent on the phosphor chemistry and composition. The more efficient approach employs LEDs that emit directly at the target wavelength and thereby bypass the energy loss of downconversion. Even in the ideal case of 100% quantum efficiency, this downconversion from the blue to the green amounts to a 20% energy loss. Of particular interest therefore are high efficiency LEDs in the green (525 nm) and deep green (555 nm) spectral region.
Proceedings ArticleDOI
Optical and electrical properties of the CdS quantum wells of CdS/ZnSe heterostructures
TL;DR: In this article, a cubic CdS/ZnSe heterostructures were grown by MBE and optical properties of the structures were investigated by means of photoluminescence.
References
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Journal ArticleDOI
Gallium vacancies and the yellow luminescence in GaN
TL;DR: In this article, the authors investigated native defects and native defect impurity complexes as candidate sources for the yellow luminescence in GaN and found strong evidence that the Ga vacancy (VGa) is responsible.
Journal ArticleDOI
High dislocation densities in high efficiency GaN‐based light‐emitting diodes
TL;DR: In this article, the electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied.
Journal ArticleDOI
Theory of Impurity Scattering in Semiconductors
TL;DR: In this paper, it was shown that the simple theory of lattice scattering alone cannot explain the temperature dependence of the resistivity of germanium semiconductors and that another probable source of resistance is scattering by ionized impurity centers.
Journal ArticleDOI
The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction
TL;DR: In this paper, the theory of dislocation density measurement from rocking curves is extended to the case of (001) zinc-blende semiconductors, and it is shown that the measurement of several ( hkl ) rocking curve widths with a particular X-ray wavelength allows the calculation of the dislocations density by two independent techniques, thus allowing for a check of self-consistency.
Journal ArticleDOI
LXXXVII. Theory of dislocations in germanium
TL;DR: In this paper, a simple model was proposed to identify dislocation acceptors with dangling unpaired electrons on the edge of the extra atomic plane of a dislocation having some edge component.