Journal ArticleDOI
Scattering of electrons at threading dislocations in GaN
TLDR
In this paper, a model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed and the statistics of trap occupancy at different doping levels are investigated.Abstract:
A model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed. Filled traps along threading dislocation lines act as Coulomb scattering centers. The statistics of trap occupancy at different doping levels are investigated. The theoretical transverse mobility from Coulomb scattering at charged traps is compared to experimental data. Due to the repulsive potential around the charged dislocation lines, electron transport parallel to the dislocations is unaffected by the scattering at charged dislocation lines.read more
Citations
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Impact of Strain and Alloy Disorder on the Electronic Properties of III-Nitride Based Two-dimensional Electron Gases
TL;DR: In this paper, the authors investigate two novel heterostructure designs and to determine the physical mechanisms limiting their electronic properties, i.e., the critical thickness and strain relaxation of GaN on AlN.
Journal ArticleDOI
Two-step lateral growth of GaN for improved emission from blue light-emitting diodes
Young Jae Park,Ji Hye Kang,Hyun Kyu Kim,Y. S. Katharria,Nam Han,Min Han,Beo Deul Ryu,Eun-Kyung Suh,Hyung Koun Cho,Chang-Hee Hong +9 more
TL;DR: A two-step growth approach based on facet-controlled epitaxial lateral growth and the application of silica nanospheres was established to enhance the performance of GaN based light-emitting diodes (LEDs).
Journal ArticleDOI
Limitations in MBE-grown GaN and AlGaN/GaN due to dislocations and lateral inhomogeneities
TL;DR: In this paper, the electron occupancy in acceptor-like states along dislocations in wurtzite GaN were modelled and the reduction in free electron concentration and mobility was calculated as a function doping concentration, dislocation concentration and compensation.
Journal ArticleDOI
Morphological evaluation of epitaxial GaN grown on r ‐plane sapphire by metalorganic vapor‐phase epitaxy
TL;DR: In this paper, the surface roughness was improved by using appropriate combinations of growth temperature and low-temperature GaN buffer thickness, which reduced the peak-to-valley value of the roughness from 4 μm to 0.8 μm.
Journal ArticleDOI
Nitride Semiconductor Surfaces. Effect of Low-temperature Deposited Layer on the Growth of Group-III Nitrides on Sapphire.
Hiroshi Amano,Isamu Akasaki +1 more
TL;DR: In this paper, the surface control by low-temperature deposited buffer layer enables the growth of high quality GaN on a sapphire substrate the lattice mismatch of which is as large as 14%.
References
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Journal ArticleDOI
Gallium vacancies and the yellow luminescence in GaN
TL;DR: In this article, the authors investigated native defects and native defect impurity complexes as candidate sources for the yellow luminescence in GaN and found strong evidence that the Ga vacancy (VGa) is responsible.
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High dislocation densities in high efficiency GaN‐based light‐emitting diodes
TL;DR: In this article, the electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied.
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Theory of Impurity Scattering in Semiconductors
TL;DR: In this paper, it was shown that the simple theory of lattice scattering alone cannot explain the temperature dependence of the resistivity of germanium semiconductors and that another probable source of resistance is scattering by ionized impurity centers.
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The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction
TL;DR: In this paper, the theory of dislocation density measurement from rocking curves is extended to the case of (001) zinc-blende semiconductors, and it is shown that the measurement of several ( hkl ) rocking curve widths with a particular X-ray wavelength allows the calculation of the dislocations density by two independent techniques, thus allowing for a check of self-consistency.
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LXXXVII. Theory of dislocations in germanium
TL;DR: In this paper, a simple model was proposed to identify dislocation acceptors with dangling unpaired electrons on the edge of the extra atomic plane of a dislocation having some edge component.