Journal ArticleDOI
Scattering of electrons at threading dislocations in GaN
TLDR
In this paper, a model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed and the statistics of trap occupancy at different doping levels are investigated.Abstract:
A model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed. Filled traps along threading dislocation lines act as Coulomb scattering centers. The statistics of trap occupancy at different doping levels are investigated. The theoretical transverse mobility from Coulomb scattering at charged traps is compared to experimental data. Due to the repulsive potential around the charged dislocation lines, electron transport parallel to the dislocations is unaffected by the scattering at charged dislocation lines.read more
Citations
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Journal ArticleDOI
Effects of MgO buffer annealing on optical and electrical quality of P-MBE grown ZnO films on c-sapphire
Agus Setiawan,T Yao +1 more
TL;DR: In this paper, the effect of buffer annealing on the optical and electrical quality of P-MBE grown ZnO films on c-sapphire with MgO buffer layer was investigated.
Proceedings ArticleDOI
Growth of III-Nitride Materials and Blue Light-Emitting Diodes by Metal Organic Vapor Phase Epitaxy
TL;DR: In this paper, the growth and electrical characteristics of blue InGaN/GaN multiple-quantum-well LEDs are presented and the doping profiles are analyzed by capacitance-voltage measurements.
Book ChapterDOI
Local Polarization Effects in Nitride Heterostructures and Devices
Edward T. Yu,Peter M. Asbeck +1 more
Journal ArticleDOI
A Chaotic Potential of Charged Dislocations in Group III-Nitride Heterojunctions
TL;DR: In this paper, the structure of the chaotic potential caused by the electrostatic field of charged dislocations in group III-nitride heterojunctions is investigated, taking into account the spatial dispersion of the dielectric response of a two-dimensional electron gas.
Journal ArticleDOI
Anti-Fowler Temperature Regime in Photoemission from n-Type Semiconductors with Surface Accumulation Layer
TL;DR: In this paper, the temperature dependence of the Fermi level energy in semiconductors has been investigated and shown to increase the quantum efficiency of photo-cathodes operating at low temperatures.
References
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Journal ArticleDOI
Gallium vacancies and the yellow luminescence in GaN
TL;DR: In this article, the authors investigated native defects and native defect impurity complexes as candidate sources for the yellow luminescence in GaN and found strong evidence that the Ga vacancy (VGa) is responsible.
Journal ArticleDOI
High dislocation densities in high efficiency GaN‐based light‐emitting diodes
TL;DR: In this article, the electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied.
Journal ArticleDOI
Theory of Impurity Scattering in Semiconductors
TL;DR: In this paper, it was shown that the simple theory of lattice scattering alone cannot explain the temperature dependence of the resistivity of germanium semiconductors and that another probable source of resistance is scattering by ionized impurity centers.
Journal ArticleDOI
The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction
TL;DR: In this paper, the theory of dislocation density measurement from rocking curves is extended to the case of (001) zinc-blende semiconductors, and it is shown that the measurement of several ( hkl ) rocking curve widths with a particular X-ray wavelength allows the calculation of the dislocations density by two independent techniques, thus allowing for a check of self-consistency.
Journal ArticleDOI
LXXXVII. Theory of dislocations in germanium
TL;DR: In this paper, a simple model was proposed to identify dislocation acceptors with dangling unpaired electrons on the edge of the extra atomic plane of a dislocation having some edge component.