Journal ArticleDOI
Scattering of electrons at threading dislocations in GaN
TLDR
In this paper, a model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed and the statistics of trap occupancy at different doping levels are investigated.Abstract:
A model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed. Filled traps along threading dislocation lines act as Coulomb scattering centers. The statistics of trap occupancy at different doping levels are investigated. The theoretical transverse mobility from Coulomb scattering at charged traps is compared to experimental data. Due to the repulsive potential around the charged dislocation lines, electron transport parallel to the dislocations is unaffected by the scattering at charged dislocation lines.read more
Citations
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Journal ArticleDOI
Nanoheteroepitaxy of GaN on a nanopore array of Si(111) surface
TL;DR: In this article, the reduction of threading dislocation density and relaxation of tensile stress in nanoheteroepitaxial growth of GaN using AlN/AlGaN as a graded buffer layer by metalorganic chemical vapor deposition was demonstrated on the nanoporous patterned Si(111) substrates.
Journal ArticleDOI
Impact of the misfit dislocations on two-dimensional electron gas mobility in semi-polar AlGaN/GaN heterostructures
Guipeng Liu,Ju Wu,Guijuan Zhao,Shu-Man Liu,Wei Mao,Yue Hao,Changbo Liu,Shaoyan Yang,Xianglin Liu,Qinsheng Zhu,Zhanguo Wang +10 more
TL;DR: In this paper, the mobility of two-dimensional electron gas as influenced by the charged misfit dislocations located at the interface of the semi-polar AlGaN/GaN heterostructure is quantitatively analyzed.
Journal ArticleDOI
Transmission electron microscopy study of defect reduction in two-step lateral epitaxial overgrown nonplanar GaN substrate templates
Wei Zhou,Dawei Ren,P.D. Dapkus +2 more
TL;DR: In this paper, the authors demonstrate the dislocation distribution and behavior in both ordinary LEO and two-step LEO, and show that only a type dislocations with Burgers vector b = 1 3 〈 1 1 2 ¯ 0 〉 are generated in the upper part above the TD bending zone between two mask windows.
Journal ArticleDOI
Key scattering mechanisms limiting the lateral transport in a modulation-doped polar heterojunction
TL;DR: In this paper, the Coulomb correlation among ionized impurities and among charged dislocations in the HJ is assumed to be strong and the 2DEG low-temperature mobility is not limited by impurity and dislocation scattering.
Journal ArticleDOI
Electron mobility in polarization-doped Al0-0.2GaN with a low concentration near 1017 cm−3
Mingda Zhu,Mingda Zhu,Meng Qi,Kazuki Nomoto,Kazuki Nomoto,Zongyang Hu,Bo Song,Ming Pan,Xiang Gao,Debdeep Jena,Huili Grace Xing +10 more
TL;DR: In this paper, the carrier transport in graded AlxGa1-xN with a polarization-induced n-type doping as low as ∼1017 cm−3 is reported.
References
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Journal ArticleDOI
Gallium vacancies and the yellow luminescence in GaN
TL;DR: In this article, the authors investigated native defects and native defect impurity complexes as candidate sources for the yellow luminescence in GaN and found strong evidence that the Ga vacancy (VGa) is responsible.
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High dislocation densities in high efficiency GaN‐based light‐emitting diodes
TL;DR: In this article, the electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied.
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Theory of Impurity Scattering in Semiconductors
TL;DR: In this paper, it was shown that the simple theory of lattice scattering alone cannot explain the temperature dependence of the resistivity of germanium semiconductors and that another probable source of resistance is scattering by ionized impurity centers.
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The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction
TL;DR: In this paper, the theory of dislocation density measurement from rocking curves is extended to the case of (001) zinc-blende semiconductors, and it is shown that the measurement of several ( hkl ) rocking curve widths with a particular X-ray wavelength allows the calculation of the dislocations density by two independent techniques, thus allowing for a check of self-consistency.
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LXXXVII. Theory of dislocations in germanium
TL;DR: In this paper, a simple model was proposed to identify dislocation acceptors with dangling unpaired electrons on the edge of the extra atomic plane of a dislocation having some edge component.