Journal ArticleDOI
Scattering of electrons at threading dislocations in GaN
TLDR
In this paper, a model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed and the statistics of trap occupancy at different doping levels are investigated.Abstract:
A model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed. Filled traps along threading dislocation lines act as Coulomb scattering centers. The statistics of trap occupancy at different doping levels are investigated. The theoretical transverse mobility from Coulomb scattering at charged traps is compared to experimental data. Due to the repulsive potential around the charged dislocation lines, electron transport parallel to the dislocations is unaffected by the scattering at charged dislocation lines.read more
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Atomic-Scale Defect Detection by Nonlinear Light Scattering and Localization
Farbod Shafiei,Tommaso Orzali,Alexey Vert,Mohammad-Ali Miri,P. Y. Hung,Man Hoi Wong,Andrea Alù,Gennadi Bersuker,Michael C. Downer +8 more
TL;DR: In this paper, the authors used optical second-harmonic scanning probe microscopy to detect sub-wavelength hot spots caused by scattering and localization of fundamental light by defect scattering sites.
Investigation of Wear Mechanism of Gallium Nitride
TL;DR: In this article, the authors propose a method to solve the problem of homonymity in homonym identification, and propose a solution to solve it........................................................................................................................ 1 1
Journal ArticleDOI
Synthesis Porous GaN by Using UV-assisted Electrochemical Etching and Its Optical Studies
TL;DR: In this paper, the shape and size of pore which was formed on the surface of the GaN was shown, and the size of the pores formed has diameter as small as 85 nm.
Journal ArticleDOI
Influence of Mn-doping on densities of screw- and edge-type threading dislocations in Ga1−xMnxN grown by metal organic chemical vapor deposition
TL;DR: A detailed study on the influence of Mn-doping on densities of screw dislocations in Ga 1− x Mn x N grown by metal organic chemical vapor deposition (MOCVD) was presented by using high-resolution X-ray diffraction (XRD) as discussed by the authors.
References
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Journal ArticleDOI
Gallium vacancies and the yellow luminescence in GaN
TL;DR: In this article, the authors investigated native defects and native defect impurity complexes as candidate sources for the yellow luminescence in GaN and found strong evidence that the Ga vacancy (VGa) is responsible.
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High dislocation densities in high efficiency GaN‐based light‐emitting diodes
TL;DR: In this article, the electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied.
Journal ArticleDOI
Theory of Impurity Scattering in Semiconductors
TL;DR: In this paper, it was shown that the simple theory of lattice scattering alone cannot explain the temperature dependence of the resistivity of germanium semiconductors and that another probable source of resistance is scattering by ionized impurity centers.
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The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction
TL;DR: In this paper, the theory of dislocation density measurement from rocking curves is extended to the case of (001) zinc-blende semiconductors, and it is shown that the measurement of several ( hkl ) rocking curve widths with a particular X-ray wavelength allows the calculation of the dislocations density by two independent techniques, thus allowing for a check of self-consistency.
Journal ArticleDOI
LXXXVII. Theory of dislocations in germanium
TL;DR: In this paper, a simple model was proposed to identify dislocation acceptors with dangling unpaired electrons on the edge of the extra atomic plane of a dislocation having some edge component.