Journal ArticleDOI
Scattering of electrons at threading dislocations in GaN
TLDR
In this paper, a model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed and the statistics of trap occupancy at different doping levels are investigated.Abstract:
A model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed. Filled traps along threading dislocation lines act as Coulomb scattering centers. The statistics of trap occupancy at different doping levels are investigated. The theoretical transverse mobility from Coulomb scattering at charged traps is compared to experimental data. Due to the repulsive potential around the charged dislocation lines, electron transport parallel to the dislocations is unaffected by the scattering at charged dislocation lines.read more
Citations
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Dislocation reduction in gallium nitride films using scandium nitride interlayers
TL;DR: In this article, a method of threading dislocation densities in 0001-oriented GaN was proposed to reduce them from (5.0±0.5)×109 cm−2 to (3.1±0.4)×107cm−2 (for coalesced films) or to below 5×106cm− 2 (for partially coalesced film) in a single step, without lithography.
Journal ArticleDOI
Electron traps and growth rate of buffer layers in unintentionally doped GaN
TL;DR: In this paper, the deep level spectra in a series of undoped GaN films with different GaN buffer growth rates were studied by deep level transient spectroscopy (DLTS), transmission electron microscopy (TEM) and high-resolution X-ray diffraction (HRXRD) in order to investigate correlation between dislocations and deep level defects.
Journal ArticleDOI
Thermoelectric effects in wurtzite GaN and AlxGa1−xN alloys
Weili Liu,Alexander A. Balandin +1 more
TL;DR: In this article, the thermoelectric properties of wurtzite GaN crystals and AlxGa1−xN alloys were investigated theoretically and the results of the calculation show that GaN-based alloys may have some potential as thermoe-lectric materials at high temperature.
Journal ArticleDOI
Scanning Kelvin probe microscopy characterization of dislocations in III-nitrides grown by metalorganic chemical vapor deposition
Goutam Koley,Michael G. Spencer +1 more
TL;DR: In this paper, the surface potential variations around the dislocations present in the Al0.35Ga0.65N/GaN heterostructures have been observed to be 0.1-0.2 V with full width at half maximums (FWHMs) of 100-200 nm.
References
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Journal ArticleDOI
Gallium vacancies and the yellow luminescence in GaN
TL;DR: In this article, the authors investigated native defects and native defect impurity complexes as candidate sources for the yellow luminescence in GaN and found strong evidence that the Ga vacancy (VGa) is responsible.
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High dislocation densities in high efficiency GaN‐based light‐emitting diodes
TL;DR: In this article, the electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied.
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Theory of Impurity Scattering in Semiconductors
TL;DR: In this paper, it was shown that the simple theory of lattice scattering alone cannot explain the temperature dependence of the resistivity of germanium semiconductors and that another probable source of resistance is scattering by ionized impurity centers.
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The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction
TL;DR: In this paper, the theory of dislocation density measurement from rocking curves is extended to the case of (001) zinc-blende semiconductors, and it is shown that the measurement of several ( hkl ) rocking curve widths with a particular X-ray wavelength allows the calculation of the dislocations density by two independent techniques, thus allowing for a check of self-consistency.
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LXXXVII. Theory of dislocations in germanium
TL;DR: In this paper, a simple model was proposed to identify dislocation acceptors with dangling unpaired electrons on the edge of the extra atomic plane of a dislocation having some edge component.