Journal ArticleDOI
Scattering of electrons at threading dislocations in GaN
TLDR
In this paper, a model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed and the statistics of trap occupancy at different doping levels are investigated.Abstract:
A model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed. Filled traps along threading dislocation lines act as Coulomb scattering centers. The statistics of trap occupancy at different doping levels are investigated. The theoretical transverse mobility from Coulomb scattering at charged traps is compared to experimental data. Due to the repulsive potential around the charged dislocation lines, electron transport parallel to the dislocations is unaffected by the scattering at charged dislocation lines.read more
Citations
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Influence of the nucleation layer morphology and epilayer structure on the resistivity of GaN films grown on c-plane sapphire by MOCVD
TL;DR: The influence of hydrogen and nitrogen carrier gases used during the preparation of the nucleation layer on the structural and electrical properties of GaN layers has been investigated in this paper, where the GaN were grown on sapphire substrates using metal organic chemical vapor deposition.
Journal ArticleDOI
Anisotropic transport properties in InAs/AlSb heterostructures
Giuseppe Moschetti,Huan Zhao,Per-Åke Nilsson,Shumin Wang,Alexey Kalabukhov,Gilles Dambrine,Sylvain Bollaert,Ludovic Desplanque,Xavier Wallart,Jan Grahn +9 more
TL;DR: In this paper, the authors investigated the anisotropic transport behavior of InAs/AlSb heterostructures grown on a (001) InP substrate and found that high electron mobility transistors exhibited 27% higher maximum drain current IDS and 23% higher peak transconductance gm when oriented along the [1-10] direction.
Journal ArticleDOI
Enhanced UV Photodetector Response of ZnO/Si With AlN Buffer Layer
Basanta Roul,Rohit Pant,Saraswathi Chirakkara,Greeshma Chandan,Karuna Kar Nanda,S. B. Krupanidhi +5 more
TL;DR: In this article, the enhancement of responsivity and detectivity of the ZnO thin-films-based ultraviolet photodetectors by introducing an AlN buffer layer on silicon substrate was studied.
Journal ArticleDOI
Effect of screw dislocation density on optical properties in n-type wurtzite GaN
Jeong Ho You,Harley T. Johnson +1 more
TL;DR: In this paper, the effect of open-core screw dislocations on photoluminescence in n-doped wurtzite GaN epilayer is studied computationally and compared with experimental data.
Journal ArticleDOI
Ga vacancies and grain boundaries in GaN
TL;DR: In this paper, a low-energy positron beam was applied to study epitaxial Si-doped GaN layers, where the grain size varies from 0.2 to 2.5 μm.
References
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Journal ArticleDOI
Gallium vacancies and the yellow luminescence in GaN
TL;DR: In this article, the authors investigated native defects and native defect impurity complexes as candidate sources for the yellow luminescence in GaN and found strong evidence that the Ga vacancy (VGa) is responsible.
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High dislocation densities in high efficiency GaN‐based light‐emitting diodes
TL;DR: In this article, the electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied.
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Theory of Impurity Scattering in Semiconductors
TL;DR: In this paper, it was shown that the simple theory of lattice scattering alone cannot explain the temperature dependence of the resistivity of germanium semiconductors and that another probable source of resistance is scattering by ionized impurity centers.
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The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction
TL;DR: In this paper, the theory of dislocation density measurement from rocking curves is extended to the case of (001) zinc-blende semiconductors, and it is shown that the measurement of several ( hkl ) rocking curve widths with a particular X-ray wavelength allows the calculation of the dislocations density by two independent techniques, thus allowing for a check of self-consistency.
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LXXXVII. Theory of dislocations in germanium
TL;DR: In this paper, a simple model was proposed to identify dislocation acceptors with dangling unpaired electrons on the edge of the extra atomic plane of a dislocation having some edge component.