Journal ArticleDOI
Scattering of electrons at threading dislocations in GaN
TLDR
In this paper, a model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed and the statistics of trap occupancy at different doping levels are investigated.Abstract:
A model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed. Filled traps along threading dislocation lines act as Coulomb scattering centers. The statistics of trap occupancy at different doping levels are investigated. The theoretical transverse mobility from Coulomb scattering at charged traps is compared to experimental data. Due to the repulsive potential around the charged dislocation lines, electron transport parallel to the dislocations is unaffected by the scattering at charged dislocation lines.read more
Citations
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Lateral variations in threshold voltage of an AlxGa1−xN/GaN heterostructure field-effect transistor measured by scanning capacitance spectroscopy
TL;DR: In this paper, local dC/dV spectroscopy performed in a scanning capacitance microscope (SCM) was used to map, quantitatively and with high spatial resolution (∼50 nm), lateral variations in the threshold voltage of an AlxGa1−xN/GaN heterostructure field effect transistor epitaxial layer structure.
Journal ArticleDOI
The influence of OMVPE growth pressure on the morphology, compensation, and doping of GaN and related alloy
Alma Wickenden,Daniel D. Koleske,R. L. Henry,R. J. Gorman,Mark E. Twigg,Mohammad Fatemi,Jaime A. Freitas,W. J. Moore +7 more
TL;DR: In this article, the impact of grain size on high mobility silicon-doped GaN and highly resistive unintentionally doped AlGaN films is discussed. And the influence of growth pressure on grain size, transport characteristics, optical recombination processes, and alloy composition of GaNs and AlGaNs is investigated.
Journal ArticleDOI
Evolution of structural and electronic properties of highly mismatched InSb films
TL;DR: In this article, the evolution of structural and electronic properties of highly mismatched InSb films, with thicknesses ranging from 0.1 to 1.5 μm, was investigated.
Journal ArticleDOI
Low-frequency noise and mobility fluctuations in AlGaN/GaN heterostructure field-effect transistors
Jose A. Garrido,B. E. Foutz,Joseph A. Smart,James R. Shealy,M. J. Murphy,William J. Schaff,L.F. Eastman,E. Muñoz +7 more
TL;DR: In this article, the 1/f low-frequency noise characteristics of AlGaN/GaN heterostructure field effect transistors, grown on sapphire and SiC substrates by molecular beam epitaxy and organometallic vapor phase epitaxy, are reported.
Journal ArticleDOI
Growth and device applications of III-nitrides by MBE
Theodore D. Moustakas,Eleftherios Iliopoulos,A.V. Sampath,H. M. Ng,D. Doppalapudi,M. Misra,D. Korakakis,Raj Singh +7 more
TL;DR: In this article, the role of nucleation layers in determining the polarity of these films is addressed, and the epitaxial growth of AlGaN and InGaN alloys is addressed.
References
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Journal ArticleDOI
Gallium vacancies and the yellow luminescence in GaN
TL;DR: In this article, the authors investigated native defects and native defect impurity complexes as candidate sources for the yellow luminescence in GaN and found strong evidence that the Ga vacancy (VGa) is responsible.
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High dislocation densities in high efficiency GaN‐based light‐emitting diodes
TL;DR: In this article, the electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied.
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Theory of Impurity Scattering in Semiconductors
TL;DR: In this paper, it was shown that the simple theory of lattice scattering alone cannot explain the temperature dependence of the resistivity of germanium semiconductors and that another probable source of resistance is scattering by ionized impurity centers.
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The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction
TL;DR: In this paper, the theory of dislocation density measurement from rocking curves is extended to the case of (001) zinc-blende semiconductors, and it is shown that the measurement of several ( hkl ) rocking curve widths with a particular X-ray wavelength allows the calculation of the dislocations density by two independent techniques, thus allowing for a check of self-consistency.
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LXXXVII. Theory of dislocations in germanium
TL;DR: In this paper, a simple model was proposed to identify dislocation acceptors with dangling unpaired electrons on the edge of the extra atomic plane of a dislocation having some edge component.