Journal ArticleDOI
Scattering of electrons at threading dislocations in GaN
TLDR
In this paper, a model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed and the statistics of trap occupancy at different doping levels are investigated.Abstract:
A model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed. Filled traps along threading dislocation lines act as Coulomb scattering centers. The statistics of trap occupancy at different doping levels are investigated. The theoretical transverse mobility from Coulomb scattering at charged traps is compared to experimental data. Due to the repulsive potential around the charged dislocation lines, electron transport parallel to the dislocations is unaffected by the scattering at charged dislocation lines.read more
Citations
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Journal ArticleDOI
Polarization-Induced 3-Dimensional Electron Slabs in Graded AlGaN Layers
TL;DR: In this article, high mobility electron gases are produced by polarization-induced doping by compositionally grading AlGaN layers over different thicknesses, and two degrees of freedom are found for choosing the carrier concentration of these slabs.
Journal ArticleDOI
Optical studies of carrier dynamics and non-equilibrium optical phonons in nitride-based wide bandgap semiconductors
Kong-Thon Tsen,W. Liang,David K. Ferry,Hai Lu,William J. Schaff,Ümit Özgür,Y. Fu,Yong-Tae Moon,Feng Yun,Hadis Morkoç,Henry O. Everitt,Henry O. Everitt +11 more
TL;DR: In this paper, the authors investigated the carrier dynamics in the form of radiative and non-radiative lifetimes in GaN grown on pseudo-in situ TiN and in situ SiN nanonetworks by organometallic vapor phase epitaxy and compared with those for freestanding GaN templates which constitute the benchmark values due to the high quality.
Journal ArticleDOI
The depth-profiled carrier concentration and scattering mechanism in undoped GaN film grown on sapphire
TL;DR: In this article, the authors used temperature-dependent Hall (TDH) measurements and confocal micro-Raman spectroscopy to study the free carrier spatial distribution and scattering mechanism in unintentionally doped GaN film.
Journal ArticleDOI
Surface morphology and electronic properties of dislocations in AIGaN/GaN heterostructures
Julia W. P. Hsu,Michael J. Manfra,D. V. Lang,Kirk W. Baldwin,L. N. Pfeiffer,Richard J. Molnar +5 more
TL;DR: In this article, the surface morphology near dislocations of AlGaN/GaN heterostructures grown by molecular beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy (HVPE) was examined.
Journal ArticleDOI
Reproducibility of growing AlGaN/GaN high-electron-mobility-transistor heterostructures by molecular-beam epitaxy
TL;DR: In this paper, high-quality GaN/AlGaN high-electron-mobility transistors (HEMT) characterized by room temperature mobilities of ∼1000 cm2 V−1/s−1 and sheet electron densities in the range of 3×1012-2×1013 cm−2 have been grown by reactive molecular-beam epitaxy on insulating C-doped GaN template layers.
References
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Journal ArticleDOI
Gallium vacancies and the yellow luminescence in GaN
TL;DR: In this article, the authors investigated native defects and native defect impurity complexes as candidate sources for the yellow luminescence in GaN and found strong evidence that the Ga vacancy (VGa) is responsible.
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High dislocation densities in high efficiency GaN‐based light‐emitting diodes
TL;DR: In this article, the electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied.
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Theory of Impurity Scattering in Semiconductors
TL;DR: In this paper, it was shown that the simple theory of lattice scattering alone cannot explain the temperature dependence of the resistivity of germanium semiconductors and that another probable source of resistance is scattering by ionized impurity centers.
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The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction
TL;DR: In this paper, the theory of dislocation density measurement from rocking curves is extended to the case of (001) zinc-blende semiconductors, and it is shown that the measurement of several ( hkl ) rocking curve widths with a particular X-ray wavelength allows the calculation of the dislocations density by two independent techniques, thus allowing for a check of self-consistency.
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LXXXVII. Theory of dislocations in germanium
TL;DR: In this paper, a simple model was proposed to identify dislocation acceptors with dangling unpaired electrons on the edge of the extra atomic plane of a dislocation having some edge component.