Journal ArticleDOI
Scattering of electrons at threading dislocations in GaN
TLDR
In this paper, a model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed and the statistics of trap occupancy at different doping levels are investigated.Abstract:
A model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed. Filled traps along threading dislocation lines act as Coulomb scattering centers. The statistics of trap occupancy at different doping levels are investigated. The theoretical transverse mobility from Coulomb scattering at charged traps is compared to experimental data. Due to the repulsive potential around the charged dislocation lines, electron transport parallel to the dislocations is unaffected by the scattering at charged dislocation lines.read more
Citations
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Canonical Quantization of Crystal Dislocation and Electron-Dislocation Scattering in an Isotropic Medium
TL;DR: In this paper, an exact solvable quantum field theory of dislocation for both edge and screw dislocations in an isotropic medium by introducing a new quasiparticle "dislon" is presented.
Journal ArticleDOI
Realization of high-resistance GaN by controlling the annealing pressure of the nucleation layer in metal-organic chemical vapor deposition
Fujun Xu,Jing-Hang Xu,Bing Shen,Zhenlin Miao,Shaoyun Huang,Lin Lu,Z. J. Yang,Zelian Qin,G. Y. Zhang +8 more
TL;DR: In this article, the influence of the annealing pressure of the nucleation layer (NL) on the resistance of GaN films grown on sapphire by means of metal-organic chemical vapor deposition has been investigated.
Journal ArticleDOI
Vertical and lateral mobilities in n-(Ga, Mn)N
Jihyun Kim,Fan Ren,G. T. Thaler,R. M. Frazier,C. R. Abernathy,Stephen J. Pearton,John Zavada,Robert G. Wilson +7 more
TL;DR: In this paper, the reverse saturation current in mesa Schottky diodes fabricated in the n-(Ga, Mn)N showed vertical electron mobilities of 840∼336 cm2/V
Journal ArticleDOI
Highly Conducting Gallium-Doped ZnO Thin Film as Transparent Schottky Contact for Organic-Semiconductor-Based Schottky Diodes
Budhi Singh,Subhasis Ghosh +1 more
TL;DR: In this article, the authors have shown that highly conducting transparent Ga-doped ZnO (GZO) thin film can be used as a Schottky contact in copper phthalocyanine (CuPc)-based diodes.
Journal ArticleDOI
Growth and relaxation processes in Ge nanocrystals on free-standing Si(001) nanopillars.
Grzegorz Kozlowski,Peter Zaumseil,M. A. Schubert,Yuji Yamamoto,J. Bauer,Tobias U. Schülli,Bernd Tillack,Thomas Schroeder +7 more
TL;DR: Improved structure quality together with high levels of uniformity of the size and shape is observed for the Ge/Si nanostructures subjected to thermal treatment.
References
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Journal ArticleDOI
Gallium vacancies and the yellow luminescence in GaN
TL;DR: In this article, the authors investigated native defects and native defect impurity complexes as candidate sources for the yellow luminescence in GaN and found strong evidence that the Ga vacancy (VGa) is responsible.
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High dislocation densities in high efficiency GaN‐based light‐emitting diodes
TL;DR: In this article, the electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied.
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Theory of Impurity Scattering in Semiconductors
TL;DR: In this paper, it was shown that the simple theory of lattice scattering alone cannot explain the temperature dependence of the resistivity of germanium semiconductors and that another probable source of resistance is scattering by ionized impurity centers.
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The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction
TL;DR: In this paper, the theory of dislocation density measurement from rocking curves is extended to the case of (001) zinc-blende semiconductors, and it is shown that the measurement of several ( hkl ) rocking curve widths with a particular X-ray wavelength allows the calculation of the dislocations density by two independent techniques, thus allowing for a check of self-consistency.
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LXXXVII. Theory of dislocations in germanium
TL;DR: In this paper, a simple model was proposed to identify dislocation acceptors with dangling unpaired electrons on the edge of the extra atomic plane of a dislocation having some edge component.