Journal ArticleDOI
Scattering of electrons at threading dislocations in GaN
TLDR
In this paper, a model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed and the statistics of trap occupancy at different doping levels are investigated.Abstract:
A model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed. Filled traps along threading dislocation lines act as Coulomb scattering centers. The statistics of trap occupancy at different doping levels are investigated. The theoretical transverse mobility from Coulomb scattering at charged traps is compared to experimental data. Due to the repulsive potential around the charged dislocation lines, electron transport parallel to the dislocations is unaffected by the scattering at charged dislocation lines.read more
Citations
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Journal ArticleDOI
Insulating GaN Epilayers Co-Doped with Iron and Carbon
W. V. Lundin,A. V. Sakharov,E. E. Zavarin,D. A. Zakgeim,E. Yu. Lundina,Pavel N. Brunkov,A. F. Tsatsul’nikov +6 more
TL;DR: In this paper, the morphology and electrical properties of doped semi-insulating gallium nitride (GaN) epilayers have been studied and it was found that doping-induced improvement of the insulating properties with increased level of doping with carbon or iron is limited by the accompanying deterioration of surface morphology.
Journal ArticleDOI
Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures
Stanislav Hasenöhrl,Prerna Chauhan,Edmund Dobročka,Roman Stoklas,Ľubomír Vančo,M. Veselý,Farah Bouazzaoui,M. P. Chauvat,Pierre Ruterana,Jan Kuzmik +9 more
TL;DR: In this article, a two-dimensional hole gas (2DHG) is created with a density of 2 × 1012 cm−2 and mobility of 0.6 cm2 V−1 s−1.
Journal ArticleDOI
High-mobility n−-GaN drift layer grown on Si substrates
Jianfei Shen,Xuelin Yang,Huayang Huang,Danshuo Liu,Zidong Cai,Zhenghao Chen,Cheng Ma,Fujun Xu,Liwen Sang,Xinqiang Wang,Weikun Ge,Bo Shen +11 more
TL;DR: In this article, the authors investigated the interaction between carbon impurities and threading dislocations and their impact on the transport properties of GaN grown on Si substrates and found that carbon impurity was associated with dislocation density, with a linear dependence.
Journal ArticleDOI
Structure and chemistry of the (111)Sc2O3/(0001) GaN epitaxial interface
TL;DR: The structure and chemistry of the (111)Sc2O3/(0001) GaN epitaxial interface grown by molecular-beam epitaxy have been investigated in this article.
References
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Journal ArticleDOI
Gallium vacancies and the yellow luminescence in GaN
TL;DR: In this article, the authors investigated native defects and native defect impurity complexes as candidate sources for the yellow luminescence in GaN and found strong evidence that the Ga vacancy (VGa) is responsible.
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High dislocation densities in high efficiency GaN‐based light‐emitting diodes
TL;DR: In this article, the electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied.
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Theory of Impurity Scattering in Semiconductors
TL;DR: In this paper, it was shown that the simple theory of lattice scattering alone cannot explain the temperature dependence of the resistivity of germanium semiconductors and that another probable source of resistance is scattering by ionized impurity centers.
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The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction
TL;DR: In this paper, the theory of dislocation density measurement from rocking curves is extended to the case of (001) zinc-blende semiconductors, and it is shown that the measurement of several ( hkl ) rocking curve widths with a particular X-ray wavelength allows the calculation of the dislocations density by two independent techniques, thus allowing for a check of self-consistency.
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LXXXVII. Theory of dislocations in germanium
TL;DR: In this paper, a simple model was proposed to identify dislocation acceptors with dangling unpaired electrons on the edge of the extra atomic plane of a dislocation having some edge component.