Journal ArticleDOI
Scattering of electrons at threading dislocations in GaN
TLDR
In this paper, a model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed and the statistics of trap occupancy at different doping levels are investigated.Abstract:
A model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed. Filled traps along threading dislocation lines act as Coulomb scattering centers. The statistics of trap occupancy at different doping levels are investigated. The theoretical transverse mobility from Coulomb scattering at charged traps is compared to experimental data. Due to the repulsive potential around the charged dislocation lines, electron transport parallel to the dislocations is unaffected by the scattering at charged dislocation lines.read more
Citations
More filters
Journal ArticleDOI
Light trapping in p-i-n superlattice based InGaN/GaN solar cells using photonic crystal
TL;DR: In this paper, the authors proposed a solar cell design having p-i-n superlattice InxGa1−xN/GaN based active layer structure supported by photonic crystal assembly at the top, with a periodic pattern extending from top antireflective coating (ARC) to inside the p-type GaN layer.
Journal ArticleDOI
Nernst-Ettingshausen effect at the trivial-nontrivial band ordering in topological crystalline insulator Pb1-xSnxSe
Krzysztof Dybko,P. Pfeffer,Michał Szot,Andrzej Szczerbakow,Anna Reszka,Tomasz Story,W. Zawadzki +6 more
TL;DR: In this article, the transverse Nernst Ettingshausen (N-E) effect and electron mobility in Pb$1-x}$sn$_x$Se alloys are studied experimentally and theoretically as functions of temperature and chemical composition in the vicinity of vanishing energy gap.
Journal ArticleDOI
Nanoindentation of laterally overgrown epitaxial gallium nitride
TL;DR: In this article, the authors compared the mechanical properties of GaN grown by the lateral epitaxial overgrowth (LEO) method and the defective seed region prepared by metalorganic chemical vapour deposition.
Journal ArticleDOI
Effect of dislocations on local transconductance in AlGaN/GaN heterostructures as imaged by scanning gate microscopy
Julia W. P. Hsu,Nils Weimann,Michael J. Manfra,Ken W. West,D. V. Lang,F. F. Schrey,Oleg Mitrofanov,Richard J. Molnar +7 more
TL;DR: In this paper, the spatial variations of transconductance in AlGaN/GaN heterostructures were mapped using a conducting tip atomic force microscope, where the conducting tip locally modulates the 2DEG while the change in the drain current was monitored as a function of tip position.
Journal ArticleDOI
Role of threading dislocations and point defects in the performance of GaN-based metal-semiconductor-metal ultraviolet photodetectors
Abhishek Chatterjee,Abhishek Chatterjee,Shailesh K. Khamari,Ravi Kumar,S. Porwal,A. Bose,T.K. Sharma,T.K. Sharma +7 more
TL;DR: In this paper, the role of threading dislocations and point defects is investigated by comparing the performance of metal-semiconductor-metal ultraviolet photodetectors (PDs) fabricated on GaN epilayers grown by HVPE and metal organic vapour phase epitaxy (MOVPE) techniques.
References
More filters
Journal ArticleDOI
Gallium vacancies and the yellow luminescence in GaN
TL;DR: In this article, the authors investigated native defects and native defect impurity complexes as candidate sources for the yellow luminescence in GaN and found strong evidence that the Ga vacancy (VGa) is responsible.
Journal ArticleDOI
High dislocation densities in high efficiency GaN‐based light‐emitting diodes
TL;DR: In this article, the electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied.
Journal ArticleDOI
Theory of Impurity Scattering in Semiconductors
TL;DR: In this paper, it was shown that the simple theory of lattice scattering alone cannot explain the temperature dependence of the resistivity of germanium semiconductors and that another probable source of resistance is scattering by ionized impurity centers.
Journal ArticleDOI
The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction
TL;DR: In this paper, the theory of dislocation density measurement from rocking curves is extended to the case of (001) zinc-blende semiconductors, and it is shown that the measurement of several ( hkl ) rocking curve widths with a particular X-ray wavelength allows the calculation of the dislocations density by two independent techniques, thus allowing for a check of self-consistency.
Journal ArticleDOI
LXXXVII. Theory of dislocations in germanium
TL;DR: In this paper, a simple model was proposed to identify dislocation acceptors with dangling unpaired electrons on the edge of the extra atomic plane of a dislocation having some edge component.