Journal ArticleDOI
Universal Compact Model for Thin-Film Transistors and Circuit Simulation for Low-Cost Flexible Large Area Electronics
Jiaqing Zhao,Pengfei Yu,Shi Qiu,Qinghang Zhao,Linrun Feng,Simon Dominic Ogier,Wei Tang,Jiali Fan,Wenjiang Liu,Yongpan Liu,Xiaojun Guo +10 more
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TLDR
A user-friendly tool was developed to provide an interactive way for convenient parameter extraction and the model is continuous from the off-state and subthreshold regimes to the above-threshold regime, avoiding the convergence problems when being used in SPICE circuit simulations.Abstract:
Thin-film transistors (TFT) in hydrogenated amorphoussilicon, amorphousmetal oxide, andsmallmolecule and polymer organic semiconductors would all hold promise as potential device candidates to large area flexible electronics applications. A universal compact dc model was developed with a proper balance between the physical and mathematical approaches for these thin-film transistors (TFTs). It can capture the common key parameters used for device performance benchmarking of the different TFTs while being applicable to a wide range of TFT technologies in different materials and device structures. Based on this model, a user-friendly tool was developed to provide an interactive way for convenient parameter extraction. The model is continuous from the off-state and subthreshold regimes to the above-threshold regime, avoiding the convergence problems when being used in SPICE circuit simulations. Finally, for verification, it was implemented into a SPICE circuit simulator using Verilog-A to simulate a TFT circuit examplewith the simulated results agreeing verywell with the experimental measurements.read more
Citations
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Journal ArticleDOI
Flexible Ultralow-Power Sensor Interfaces for E-Skin
TL;DR: This review will present the state of the art in thin-film electronics and demonstrate examples of low-cost printable transistors and biosensors that are flexible/stretchable for wearable and other applications and a concept for an integrated system comprising sensors and interfacing circuits that has the potential to enable batteryless operation.
Journal ArticleDOI
A digital library for a flexible low-voltage organic thin-film transistor technology
Mourad Elsobky,Mohamed Elattar,Golzar Alavi,Florian Letzkus,Harald Richter,Ute Zschieschang,Michael Strecker,Hagen Klauk,Joachim N. Burghartz +8 more
TL;DR: In this article, the design, fabrication and characterization of digital logic gates, flip-flops and shift registers based on lowvoltage organic thin-film transistors (TFTs) on flexible plastic substrates is presented.
Proceedings ArticleDOI
Process design kit for flexible hybrid electronics
TL;DR: The key elements of FHE-PDK include technology files for design rule checking, layout versus schematic and layout parasitics extraction, as well as SPICE-compatible models for flexible thin-film transistors (TFTs) and passive elements.
Journal ArticleDOI
Advances in Compact Modeling of Organic Field-Effect Transistors
Sungyeop Jung,Yvan Bonnassieux,Gilles Horowitz,Sungjune Jung,Benjamin Iniguez,Chang-Hyun Kim +5 more
TL;DR: The essential requirements, up-to-date progresses, and imminent challenges for the OFET compact device modeling toward a universal, physically valid, and applicable description of this fast-developing technology are discussed.
Journal ArticleDOI
Compact Modeling of Thin-Film Transistors for Flexible Hybrid IoT Design
Leilai Shao,Ting Lei,Tsung-Ching Huang,Sicheng Li,Ta-Ya Chu,Man Wong,Raymond G. Beausoleil,Zhenan Bao,Kwang-Ting Cheng +8 more
TL;DR: A SPICE-compatible compact model for a range of thin-film transistors that can be manufactured at low cost and on flexible materials using printing technologies is described.
References
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Journal ArticleDOI
Threshold voltage and turn-on voltage in organic transistors: Sensitivity to contact parasitics
Louis Giraudet,O. Simonetti +1 more
TL;DR: In this article, a distributed model based on a numerical calculation of the accumulated charge along the channel, allowing the calculation of transistor output characteristics both below and above threshold, was developed, and the impact on threshold voltage and turn-on voltage was outlined.
Journal ArticleDOI
Modeling and Scaling of a-Si:H and Poly-Si Thin Film Transistors
Michael Shur,H. C. Slade,Trond Ytterdal,L. Wang,Zheng Xu,M. Hack,K. Aflatooni,Y. Byun,Yong P. Chen,M. W. D. Froggatt,A. Krishnan,Ping Mei,H. Meiling,Byung Hyuk Min,Arokia Nathan,S. Sherman,Mark Stewart,Steven D. Theiss +17 more
TL;DR: In this article, the SPICE models for hydrogenated amorphous silicon (a-Si:H) and polysilicon (poly-Si) thin film transistors (TFTs) are presented.
Journal ArticleDOI
Surface reactions in very low temperature (<150°C) hydrogenated amorphous silicon deposition, and applications to thin film transistors
TL;DR: In this article, surface processes to control bonded hydrogen content in hydrogenated amorphous silicon (a-Si:H) deposited by plasma enhanced chemical vapor deposition are discussed, and experiments with helium diluted silane under typical plasma deposition conditions show that ion bombardment can be used to control Si-H bond concentrations at very low temperature through ion-enhanced silicon-hydrogen disproportionation reactions.
Journal ArticleDOI
Compact model for forward subthreshold characteristics in polymer semiconductor transistors
TL;DR: In this article, a model for polymer thin film transistors (TFTs) operating in forward sub-threshold region is presented, where the shape of the density of deep states cannot be assumed to be purely exponential.