Showing papers on "Photodiode published in 2016"

Integrating an electrically active colloidal quantum dot photodiode with a graphene phototransistor.

Abstract: The realization of low-cost photodetectors with high sensitivity, high quantum efficiency, high gain and fast photoresponse in the visible and short-wave infrared remains one of the challenges in optoelectronics. Two classes of photodetectors that have been developed are photodiodes and phototransistors, each of them with specific drawbacks. Here we merge both types into a hybrid photodetector device by integrating a colloidal quantum dot photodiode atop a graphene phototransistor. Our hybrid detector overcomes the limitations of a phototransistor in terms of speed, quantum efficiency and linear dynamic range. We report quantum efficiencies in excess of 70%, gain of 105 and linear dynamic range of 110 dB and 3 dB bandwidth of 1.5 kHz. This constitutes a demonstration of an optoelectronically active device integrated directly atop graphene and paves the way towards a generation of flexible highly performing hybrid two-dimensional (2D)/0D optoelectronics. The combination of fast photo-response and high gain plays a pivotal role in photodetector devices. Here the authors combine a colloidal quantum dot photodiode with a graphene phototransistor to overcome the speed, quantum efficiency and linear dynamic range limitations of available phototransistors.

Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device

Abstract: We demonstrate tunable Schottky barrier height and record photo-responsivity in a new-concept device made of a single-layer CVD graphene transferred onto a matrix of nanotips patterned on n-type Si wafer. The original layout, where nano-sized graphene/Si heterojunctions alternate to graphene areas exposed to the electric field of the Si substrate, which acts both as diode cathode and transistor gate, results in a two-terminal barristor with single-bias control of the Schottky barrier. The nanotip patterning favors light absorption, and the enhancement of the electric field at the tip apex improves photo-charge separation and enables internal gain by impact ionization. These features render the device a photodetector with responsivity (3 A/W for white LED light at 3 mW/cm2 intensity) almost an order of magnitude higher than commercial photodiodes. We extensively characterize the voltage and the temperature dependence of the device parameters and prove that the multi-junction approach does not add extra-inhomogeneity to the Schottky barrier height distribution. This work represents a significant advance in the realization of graphene/Si Schottky devices for optoelectronic applications.

Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device

Abstract: We demonstrate tunable Schottky barrier height and record photo-responsivity in a new-concept device made of a single-layer CVD graphene transferred onto a matrix of nanotips patterned on n-type Si wafer. The original layout, where nano-sized graphene/Si heterojunctions alternate to graphene areas exposed to the electric field of the Si substrate, which acts both as diode cathode and transistor gate, results in a two-terminal barristor with single-bias control of the Schottky barrier. The nanotip patterning favors light absorption, and the enhancement of the electric field at the tip apex improves photo-charge separation and enables internal gain by impact ionization. These features render the device a photodetector with responsivity (3 A/W for white LED light at 3 mW/cm2 intensity) almost an order of magnitude higher than commercial photodiodes. We extensively characterize the voltage and the temperature dependence of the device parameters and prove that the multi-junction approach does not add extra-inhomogeneity to the Schottky barrier height distribution. This work represents a significant advance in the realization of graphene/Si Schottky devices for optoelectronic applications.

Visible Light-Assisted High-Performance Mid-Infrared Photodetectors Based on Single InAs Nanowire

Abstract: One-dimensional InAs nanowires (NWs) have been widely researched in recent years. Features of high mobility and narrow bandgap reveal its great potential of optoelectronic applications. However, most reported work about InAs NW-based photodetectors is limited to the visible waveband. Although some work shows certain response for near-infrared light, the problems of large dark current and small light on/off ratio are unsolved, thus significantly restricting the detectivity. Here in this work, a novel “visible light-assisted dark-current suppressing method” is proposed for the first time to reduce the dark current and enhance the infrared photodetection of single InAs NW photodetectors. This method effectively increases the barrier height of the metal–semiconductor contact, thus significantly making the device a metal–semiconductor–metal (MSM) photodiode. These MSM photodiodes demonstrate broadband detection from less than 1 μm to more than 3 μm and a fast response of tens of microseconds. A high detectivit...

Near-unity quantum efficiency of broadband black silicon photodiodes with an induced junction

Abstract: The combination of black silicon to improve the light absorption and negatively charged alumina to form an induced collecting junction characterizes a photodiode with external quantum efficiency above 96% between 250 nm and 950 nm.

Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection.

Abstract: Normal-incidence Ge1-xSnx photodiode detectors with Sn compositions of 7 and 10% have been demonstrated. Such detectors were based on Ge/Ge1-xSnx/Ge double heterostructures grown directly on a Si substrate via a chemical vapor deposition system. A temperature-dependence study of these detectors was conducted using both electrical and optical characterizations from 300 to 77 K. Spectral response up to 2.6 µm was achieved for a 10% Sn device at room temperature. The peak responsivity and specific detectivity (D*) were measured to be 0.3 A/W and 4 × 109 cmHz1/2W−1 at 1.55 µm, respectively. The spectral D* of a 7% Sn device at 77 K was only one order-of-magnitude lower than that of an extended-InGaAs photodiode operating in the same wavelength range, indicating the promising future of GeSn-based photodetectors.

High-power, high-linearity photodiodes

Abstract: Microwave photonics and optics-based analog links are technologies that are being developed for a growing number of applications. Photodetectors that operate at high power levels are key components. Additionally, it is important for many of these applications that the photodiodes have millimeter-wave bandwidths and highly linear response. This paper reviews the performance of modified uni-traveling carrier photodiodes with respect to these characteristics.

Zener Tunneling and Photoresponse of a WS2/Si van der Waals Heterojunction.

Abstract: Van der Waals heterostructures built from two-dimensional materials on a conventional semiconductor offer novel electronic and optoelectronic properties for next-generation information devices. Here we report that by simply stacking a vapor-phase-synthesized multilayer n-type WS2 film onto a p-type Si substrate, a high-responsivity Zener photodiode can be achieved. We find that above a small reverse threshold voltage of 0.5 V, the fabricated heterojunction exhibits Zener tunneling behavior which was confirmed by its negative temperature coefficient of the breakdown voltage. The WS2/Si heterojunction working in the Zener breakdown regime shows a stable and linear photoresponse, a broadband photoresponse ranging from 340 to 1100 nm with a maximum photoresponsivity of 5.7 A/W at 660 nm and a fast response speed of 670 μs. Such high performance can be attributed to the ultrathin depletion layer involved in the WS2/Si p–n junction, on which a strong electric field can be created even with a small reverse volta...

Low-noise AlInAsSb avalanche photodiode

Abstract: We report low-noise avalanche gain from photodiodes composed of a previously uncharacterized alloy, Al0.7In0.3As0.3Sb0.7, grown on GaSb. The bandgap energy and thus the cutoff wavelength are similar to silicon; however, since the bandgap of Al0.7In0.3As0.3Sb0.7 is direct, its absorption depth is 5 to 10 times shorter than indirect-bandgap silicon, potentially enabling significantly higher operating bandwidths. In addition, unlike other III-V avalanche photodiodes that operate in the visible or near infrared, the excess noise factor is comparable to or below that of silicon, with a k-value of approximately 0.015. Furthermore, the wide array of absorber regions compatible with GaSb substrates enable cutoff wavelengths ranging from 1 μm to 12 μm.

Silicon-plasmonic internal-photoemission detector for 40 Gbit/s data reception

Abstract: Silicon-plasmonics enables the fabrication of active photonic circuits in CMOS technology with unprecedented operation speed and integration density. Regarding applications in chip-level optical interconnects, fast and efficient plasmonic photodetectors with ultrasmall footprints are of special interest. A particularly promising approach to silicon-plasmonic photodetection is based on internal photoemission (IPE), which exploits intrinsic absorption in plasmonic waveguides at the metal–dielectric interface. However, while IPE plasmonic photodetectors have already been demonstrated, their performance is still far below that of conventional high-speed photodiodes. In this paper, we demonstrate a novel class of IPE devices with performance parameters comparable to those of state-of-the-art photodiodes while maintaining footprints below 1 μm2. The structures are based on asymmetric metal–semiconductor–metal waveguides with a width of less than 75 nm. We measure record-high sensitivities of up to 0.12 A/W at a wavelength of 1550 nm. The detectors exhibit opto-electronic bandwidths of at least 40 GHz. We demonstrate reception of on–off keying data at rates of 40 Gbit/s.

High performance bias-selectable three-color Short-wave/Mid-wave/Long-wave Infrared Photodetectors based on Type-II InAs/GaSb/AlSb superlattices

Abstract: We propose a new approach in device architecture to realize bias-selectable three-color shortwave-midwave-longwave infrared photodetectors based on InAs/GaSb/AlSb type-II superlattices. The effect of conduction band off-set and different doping levels between two absorption layers are employed to control the turn-on voltage for individual channels. The optimization of these parameters leads to a successful separation of operation regimes; we demonstrate experimentally three-color photodiodes without using additional terminal contacts. As the applied bias voltage varies, the photodiodes exhibit sequentially the behavior of three different colors, corresponding to the bandgap of three absorbers. Well defined cut-offs and high quantum efficiency in each channel are achieved. Such all-in-one devices also provide the versatility of working as single or dual-band photodetectors at high operating temperature. With this design, by retaining the simplicity in device fabrication, this demonstration opens the prospect for three-color infrared imaging.

X-Ray Detector-on-Plastic With High Sensitivity Using Low Cost, Solution-Processed Organic Photodiodes

Abstract: We made and characterized an X-ray detector on a 25- $\mu \text{m}$ -thick plastic substrate that is capable of medical-grade performance. As an indirect conversion flat panel detector, it combined a standard scintillator with an organic photodetector (OPD) layer and oxide thin-film transistor backplane. Using solution-processed organic bulk heterojunction photodiode rather than the usual amorphous silicon, process temperature is reduced to be compatible with plastic film substrates, and a number of costly lithography steps are eliminated, opening the door to lower production costs. With dark currents as low as 1 pA/mm $^{2}$ and sensitivity of 0.2 A/W the OPD also meets functional requirements: the proof-of-concept detector delivers high-resolution, dynamic images at 10 frames/s, and 200 pixels/in using X-ray doses as low as $3~\mu $ Gy/frame.

High-Power Flip-Chip Bonded Photodiode With 110 GHz Bandwidth

Abstract: Back-illuminated flip-chip-bonded charge-compensated modified uni-traveling-carrier photodiodes (PDs) with bandwidths in excess of 110 GHz are demonstrated. PDs with 10- and 6-μm-diameters deliver RF output power levels as high as 9.6 dBm at 100 GHz and 7.8 dBm at 110 GHz, respectively. An analytical model based on parameter extraction from S-parameter fitting was used to assess the bandwidth limiting factors.

Spectral sensitivity of graphene/silicon heterojunction photodetectors

Abstract: We have studied the optical properties of two-dimensional (2D) Schottky photodiode heterojunctions made of chemical vapor deposited (CVD) graphene on n- and p-type silicon (Si) substrates. Much better rectification behavior is observed from the diodes fabricated on n-Si substrates in comparison with the devices on p-Si substrates in dark condition. Also, graphene – n-Si photodiodes show a considerable responsivity of 270 mA W −1 within the silicon spectral range in DC reverse bias condition. The present results are furthermore compared with that of a molybdenum disulfide (MoS 2 ) – p-type silicon photodiode.

Thermal-to-electrical energy conversion by diodes under negative illumination

Abstract: We consider an infrared photodiode under negative illumination, wherein the photodiode is maintained at a temperature $T$ and radiatively exposed to an emissive body colder than itself. We experimentally demonstrate that a diode under such conditions can generate electrical power. We show theoretically that the efficiency of energy conversion can approach the Carnot limit. This work is applicable to waste heat recovery as well as emerging efforts to utilize the cold dark universe as a thermodynamic resource for renewable energy.

Flexible Photodiodes Based on Nitride Core/Shell p-n Junction Nanowires

Abstract: A flexible nitride p-n photodiode is demonstrated. The device consists of a composite nanowire/polymer membrane transferred onto a flexible substrate. The active element for light sensing is a vertical array of core/shell p–n junction nanowires containing InGaN/GaN quantum wells grown by MOVPE. Electron/hole generation and transport in core/shell nanowires are modeled within nonequilibrium Green function formalism showing a good agreement with experimental results. Fully flexible transparent contacts based on a silver nanowire network are used for device fabrication, which allows bending the detector to a few millimeter curvature radius without damage. The detector shows a photoresponse at wavelengths shorter than 430 nm with a peak responsivity of 0.096 A/W at 370 nm under zero bias. The operation speed for a 0.3 × 0.3 cm2 detector patch was tested between 4 Hz and 2 kHz. The −3 dB cutoff was found to be ∼35 Hz, which is faster than the operation speed for typical photoconductive detectors and which is c...

A High- $Q$ InP Resonant Angular Velocity Sensor for a Monolithically Integrated Optical Gyroscope

Abstract: The design, fabrication, and optical characterization of the sensing element of a photonic InP-based gyroscope intended for applications in the field of aerospace and defense are reported in this paper. The sensing element is a spiral resonator coupled to a straight bus waveguide through a multimode interference coupler and exhibits a $Q$ factor of approximately 600 000 with a footprint of approximately 10 mm 2. The design of each component of the sensor is based on some well-established numerical methods such as the Finite Element Method, the beam propagation method, and the film mode matching method. The spiral cavity was designed using the standard transfer matrix method. The selected fabrication process, which is an enhanced version of the standard COBRA process, allows the monolithic integration of the sensing element with the other active components of the gyroscope, e.g., lasers, photodiodes, and modulators. Each component of the fabricated sensing element was optically characterized using an appropriate setup, which was also used for the optical characterization of the whole sensor. Based on the results of the characterization, the gyro performance was evaluated, and a way to improve both the resolution and the bias drift, i.e., down to 10 °/h and 1 °/h, respectively, was also clearly identified. The achieved results demonstrate, for the first time, the actual feasibility of a photonic gyro-on-chip through a well-established InP-based generic integration process.

Sb2S3/Spiro-OMeTAD Inorganic–Organic Hybrid p–n Junction Diode for High Performance Self-Powered Photodetector

Abstract: Organic–inorganic hybrid diodes are very promising for solution processing, low cost, high performance optoelectronic devices. Here, we report a high quality p–n heterojunction diode composed of n-type inorganic Sb2S3 and p-type organic 2,2′,7,7′-tetrakis-(N,N-di-p-methoxyphenylamine)-9,9′-spirobifluorene (spiro-OMeTAD) with a rectification ratio of ∼102 at an applied bias of 1 V. On illumination with visible light (470 nm, 1.82 mW/cm2), the current value in our device becomes 8 × 102 times that of its dark value even at a zero bias condition. The estimated responsivity value at zero bias is 0.087 A/W which is so far the highest reported for any organic–inorganic hybrid photodiode, to the best of our knowledge. It also exhibits a fast photoresponse time of <25 ms (instrumental limit). More importantly, our device can also detect visible light with power density as low as 8 μW/cm2 with a photocurrent density of 1.2 μA/cm2 and a photocurrent to dark current ratio of more than 8. We also demonstrate that the...

Narrow-Band Organic Photodiodes for High-Resolution Imaging.

Abstract: There are growing opportunities and demands for image sensors that produce higher-resolution images, even in low-light conditions. Increasing the light input areas through 3D architecture within the same pixel size can be an effective solution to address this issue. Organic photodiodes (OPDs) that possess wavelength selectivity can allow for advancements in this regard. Here, we report on novel push–pull D−π–A dyes specially designed for Gaussian-shaped, narrow-band absorption and the high photoelectric conversion. These p-type organic dyes work both as a color filter and as a source of photocurrents with linear and fast light responses, high sensitivity, and excellent stability, when combined with C60 to form bulk heterojunctions (BHJs). The effectiveness of the OPD composed of the active color filter was demonstrated by obtaining a full-color image using a camera that contained an organic/Si hybrid complementary metal-oxide-semiconductor (CMOS) color image sensor.

VCSEL based sensors for distance and velocity

Abstract: VCSEL based sensors can measure distance and velocity in three dimensional space and are already produced in high quantities for professional and consumer applications. Several physical principles are used: VCSELs are applied as infrared illumination for surveillance cameras. High power arrays combined with imaging optics provide a uniform illumination of scenes up to a distance of several hundred meters. Time-of-flight methods use a pulsed VCSEL as light source, either with strong single pulses at low duty cycle or with pulse trains. Because of the sensitivity to background light and the strong decrease of the signal with distance several Watts of laser power are needed at a distance of up to 100m. VCSEL arrays enable power scaling and can provide very short pulses at higher power density. Applications range from extended functions in a smartphone over industrial sensors up to automotive LIDAR for driver assistance and autonomous driving. Self-mixing interference works with coherent laser photons scattered back into the cavity. It is therefore insensitive to environmental light. The method is used to measure target velocity and distance with very high accuracy at distances up to one meter. Single-mode VCSELs with integrated photodiode and grating stabilized polarization enable very compact and cost effective products. Besides the well know application as computer input device new applications with even higher accuracy or for speed over ground measurement in automobiles and up to 250km/h are investigated. All measurement methods exploit the known VCSEL properties like robustness, stability over temperature and the potential for packages with integrated optics and electronics. This makes VCSEL sensors ideally suited for new mass applications in consumer and automotive markets.

On-chip photonic system using suspended p-n junction InGaN/GaN multiple quantum wells device and multiple waveguides

Abstract: We propose, fabricate, and characterize the on-chip integration of suspended p-n junction InGaN/GaN multiple quantum wells(MQWs) device and multiple waveguides on the same GaN-on-silicon platform. The integrated devices are fabricated via a wafer-level process and exhibit selectable functionalities for diverse applications. As the suspended p-n junction InGaN/GaN MQWs device operates under a light emitting diode(LED) mode, part of the light emission is confined and guided by the suspended waveguides. The in-plane propagation along the suspended waveguides is measured by a micro-transmittance setup. The on-chip data transmission is demonstrated for the proof-of-concept photonic integration. As the suspended p-n junction InGaN/GaN MQWs device operates under photodiode mode, the light is illuminated on the suspended waveguides with the aid of the micro-transmittance setup and, thus, coupled into the suspended waveguides. The guided light is finally sensed by the photodiode, and the induced photocurrent trace shows a distinct on/off switching performance. These experimental results indicate that the on-chip photonic integration is promising for the development of sophisticated integrated photonic circuits in the visible wavelength region.

Bias-Free Operational UTC-PD above 110 GHz and Its Application to High Baud Rate Fixed-Fiber Communication and W-Band Photonic Wireless Communication

Abstract: We present the design of a bias-free uni-travelling-carrier photodiode (UTC-PD) that is operational above 110 GHz, and its application to 100-GBd fixed-fiber communication and 109-GHz carrier-photonic wireless communication for advanced optical networks. The design and analysis for bias-free operation were explained in detail using the carrier concentration in the photo-absorption layer and carrier collector layer. In the experimental results, the developed UTC-PD with back-illuminated structure exhibited a wide 3-dB bandwidth of over 110 GHz at 0 V. For fixed-fiber communications, a high-baud-rate photoreceiver based on the UTC-PD was fabricated. Eye diagrams showed clear openings at up to 107 GBd and high photo-currents of 3–7 mA at 100 GHz signal light were observed at zero-bias. Assuming photonic wireless communication using photonic power supply through optical fiber, the developed UTC-PD contributed to reducing bias feeds to the photoreceiver module. Additionally, low power consumption was achieved when using the newly developed 110 GHz InP-PHEMT amplifier with the UTC-PD.

Bipolar Junction Transistors in Two-Dimensional WSe2 with Large Current and Photocurrent Gains.

Abstract: In the development of semiconductor devices, the bipolar junction transistor (BJT) features prominently as being the first solid state transistor that helped to usher in the digital revolution. For any new semiconductor, therefore, the fabrication and characterization of the BJT are important for both technological importance and historical significance. Here, we demonstrate a BJT device in exfoliated TMD semiconductor WSe2. We use buried gates to electrostatically create doped regions with back-to-back p–n junctions. We demonstrate two central characteristics of a bipolar device: current gain when operated as a BJT and a photocurrent gain when operated as a phototransistor. We demonstrate a current gain of 1000 and photocurrent gain of 40 and describe features that enhance these properties due to the doping technique that we employ.

Dark current analysis in high-speed germanium p-i-n waveguide photodetectors

Abstract: We present a dark current analysis in waveguide-coupled germanium vertical p-i-n photodetectors. In the analysis, a surface leakage current and a bulk leakage current were separated, and their activation energies were extracted. The surface leakage current originating from the minority carrier generation on the Ge layer sidewalls, governed by the Shockley-Read-Hall process and enhanced by the trap-assisted-tunneling process, was identified as the main contribution to the dark current of vertical p-i-n photodiodes at room temperature. The behavior of this surface leakage current as a function of temperature and reverse bias voltage is well reproduced by using the Hurckx model for trap-assisted-tunneling.

Ferroelectric polymer tuned two dimensional layered MoTe2 photodetector

Abstract: Two dimensional material based photodetectors have attracted wide attention in recent years. In this work, a few-layer MoTe2 based phototransistor with a ferroelectric polymer P(VDF-TrFE) topgate is fabricated. The remanent polarization of the ferroelectrics could deplete the channel effectively to decrease the dark current of the device by more than one magnitude. As a result, the MoTe2 phototransistor has an appreciable photoresponse for visible light and near infrared. The device has a broad photoresponse range (0.6–1.5 μm), the responsivity and detectivity reach 16.4 mA W−1 and 1.94 × 108 Jones for 1060 nm light. The device works without an external gate voltage, which makes for higher reliability and lower power dissipation for practical application.

Ag/ZnO/p-Si/Ag heterojunction and their optoelectronic characteristics under different UV wavelength illumination

Abstract: An ultraviolet (UV) photodiode was fabricated by employing zinc oxide (ZnO) nanorods (NRs) grown on a p-type silicon (Si) wafer. The fabricated heterojunction was characterised for its crystal structure, morphology, chemical state, and the photoluminescence emission. The current–voltage characteristics show that the junction exhibits good rectification characteristics, with a reverse leakage current of 1.2 nA and a rectification ratio of 210 at 5 V. Furthermore, the calculated barrier height and the ideality factor were 0.78 eV and 2.3, respectively. The photodiode was illuminated with different UV wavelengths (300–400 nm). The output measurements of the photocurrent showed the maximum range of values for the wavelength at 350–370 nm. The barrier height was at its minimum value, and the ideality factor was at its maximum value in the wavelengths with energies near the energy band gap of the ZnO NRs. The results reveal the relation between the UV wavelengths, the barrier height, and the ideality factor. The fabricated photodiode reveals acceptable properties with responsivity of 0.6 A/W at wavelength 370 nm and 5 V reverse bias.

Surface leakage current in 12.5 μm long-wavelength HgCdTe infrared photodiode arrays.

Abstract: Long-wavelength (especially >12 μm) focal plane array (FPA) infrared detection is the cutting edge technique for third-generation infrared remote sensing. However, dark currents, which are very sensitive to the growth of small Cd composition HgCdTe, strongly limits the performance of long wavelength HgCdTe photodiode arrays in FPAs. In this Letter, 12.5 μm long-wavelength Hg1-xCdxTe (x≈0.219) infrared photodiode arrays are reported. The variable-area and variable-temperature electrical characteristics of the long-wavelength infrared photodiodes are measured. The characteristics of the extracted zero-bias resistance-area product (l/R0A) varying with the perimeter-to-area (P/A) ratio clearly show that surface leakage current mechanisms severely limit the overall device performance. A sophisticated model has been developed for investigating the leakage current mechanism in the photodiodes. Modeling of temperature-dependent I-V characteristic indicates that the trap-assisted tunneling effect dominates the dark current at 50 K resulting in nonuniformities in the arrays. The extracted trap density, approximately 1013-1014 cm-3, with an ionized energy of 30 meV is determined by simulation. The work described in this Letter provides the basic mechanisms for a better understanding of the leakage current mechanism for long-wavelength (>12 μm) HgCdTe infrared photodiode arrays.