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Xiang Zhang

Researcher at Baylor College of Medicine

Publications -  3483
Citations -  144843

Xiang Zhang is an academic researcher from Baylor College of Medicine. The author has contributed to research in topics: Medicine & Computer science. The author has an hindex of 154, co-authored 1733 publications receiving 117576 citations. Previous affiliations of Xiang Zhang include University of California, Berkeley & University of Texas MD Anderson Cancer Center.

Papers
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Journal ArticleDOI

Measurement of the inclusive cross-section for the production of jets in association with a Z boson in proton–proton collisions at 8 TeV using the ATLAS detector

Georges Aad, +2936 more
TL;DR: In this paper, the cross-section for jet production in association with a Z boson decaying into an electronpositron pair is measured as a function of the transverse momentum and the absolute rapidity of the decay.
Journal ArticleDOI

Assessing the impact of unmeasured confounders for credible and reliable real-world evidence.

TL;DR: This work reviews statistical methods for assessing the possible impact of bias due to unmeasured confounding in real world data analysis and provides detailed recommendations for choosing among the methods.
Book ChapterDOI

Characterization and Detection of Building Patterns in Cartographic Data: Two Algorithms

TL;DR: In this article, two graph-theoretic algorithms are presented to detect these two types of building patterns: align-along-road alignment and unstructured clusters, and the proposed clustering approach bases itself on auxiliary data structures such as Delaunay triangulation and minimum spanning trees.
Journal ArticleDOI

Characterising and representing small crack growth in an additive manufactured titanium alloy

TL;DR: In this article, the modified Hartman-Schijve equation was applied to predict small crack growth rate in an additive manufactured titanium Ti-6Al-4V, and a small fatigue crack test was conducted to validate the fitted equation.
Journal ArticleDOI

Structural and optical emission characteristics of InGaN thin layers and the implications for growing high-quality quantum wells by MOCVD

TL;DR: In this article, defect formation and In segregation in InGaN/GaN quantum wells were studied using cathodoluminescence, transmission electron microscopy (TEM), and high-resolution transmission electron microscope (HR-TEM).