Hong Kong Polytechnic University

About: Hong Kong Polytechnic University is a education organization based out in Hong Kong, China. It is known for research contribution in the topics: Computer science & Tourism. The organization has 29633 authors who have published 72136 publications receiving 1956312 citations. The organization is also known as: HKPU & PolyU.

High‐Electron‐Mobility and Air‐Stable 2D Layered PtSe2 FETs

Abstract: The electrical and optical measurements, in combination with density functional theory calculations, show distinct layer-dependent semiconductor-to-semimetal evolution of 2D layered PtSe2 . The high room-temperature electron mobility and near-infrared photo-response, together with much better air-stability, make PtSe2 a versatile electronic 2D layered material.

Design-Oriented Stress-Strain Model for FRP-Confined Concrete in Rectangular Columns

Abstract: The behavior of fiber reinforced polymer (FRP)-confined concrete in circular columns has been extensively studied, but much less is known about concrete in FRP-confined rectangular columns in which the concrete is nonuniformly confined and the effectiveness of confinement is much reduced. This paper presents a simple design-oriented stress-strain model for FRP-confined concrete in rectangular columns. To this end, existing theoretical models are first reviewed. A database of existing test results collected by the authors is next presented, which is then augmented by a new set of results from tests conducted by the authors. The augmented test database is next employed to assess the existing theoretical models. Finally, a stress-strain model is presented, which is an extension of a recent design-oriented stress-strain model developed for concrete uniformly-confined with FRP based on test results of circular concrete specimens. The proposed stress-strain model is shown to provide satisfactory predictions of ...

Fast growth of inch-sized single-crystalline graphene from a controlled single nucleus on Cu–Ni alloys

Abstract: Wafer-scale single-crystalline graphene monolayers are highly sought after as an ideal platform for electronic and other applications. At present, state-of-the-art growth methods based on chemical vapour deposition allow the synthesis of one-centimetre-sized single-crystalline graphene domains in ∼12 h, by suppressing nucleation events on the growth substrate. Here we demonstrate an efficient strategy for achieving large-area single-crystalline graphene by letting a single nucleus evolve into a monolayer at a fast rate. By locally feeding carbon precursors to a desired position of a substrate composed of an optimized Cu-Ni alloy, we synthesized an ∼1.5-inch-large graphene monolayer in 2.5 h. Localized feeding induces the formation of a single nucleus on the entire substrate, and the optimized alloy activates an isothermal segregation mechanism that greatly expedites the growth rate. This approach may also prove effective for the synthesis of wafer-scale single-crystalline monolayers of other two-dimensional materials.