Pusan National University

About: Pusan National University is a education organization based out in Busan, South Korea. It is known for research contribution in the topics: Catalysis & Population. The organization has 24124 authors who have published 45054 publications receiving 819356 citations. The organization is also known as: Busan National University & Pusan University.

Solderable and electroplatable flexible electronic circuit on a porous stretchable elastomer

Abstract: A variety of flexible and stretchable electronics have been reported for use in flexible electronic devices or biomedical applications. The practical and wider application of such flexible electronics has been limited because commercial electronic components are difficult to be directly integrated into flexible stretchable electronics and electroplating is still challenging. Here, we propose a novel method for fabricating flexible and stretchable electronic devices using a porous elastomeric substrate. Pressurized steam was applied to an uncured polydimethylsiloxane layer for the simple and cost-effective production of porous structure. An electroplated nickel anchor had a key role in bonding commercial electronic components on elastomers by soldering techniques, and metals could be stably patterned and electroplated for practical uses. The proposed technology was applied to develop a plaster electrocardiogram dry electrode and multi-channel microelectrodes that could be used as a long-term wearable biosignal monitor and for brain signal monitoring, respectively.

Silver nanowire embedded in P3HT:PCBM for high-efficiency hybrid photovoltaic device applications.

Abstract: A systematic approach has been followed in the development of a high-efficiency hybrid photovoltaic device that has a combination of poly(3-hexylthiophene) (P3HT), [6,6]-phenyl C61-butyric acid methyl ester (PCBM), and silver nanowires (Ag NWs) in the active layer using the bulk heterojunction concept. The active layer is modified by utilizing a binary solvent system for blending. In addition, the solvent evaporation process after spin-coating is changed and an Ag NWs is incorporated to improve the performance of the hybrid photovoltaic device. Hybrid photovoltaic devices were fabricated by using a 1:0.7 weight ratio of P3HT to PCBM in a 1:1 weight ratio of o-dichlorobenzene and chloroform solvent mixture, in the presence and absence of 20 wt % of Ag NWs. We also compared the photovoltaic performance of Ag NWs embedded in P3HT:PCBM to that of silver nanoparticles (Ag NPs). Atomic force microscopy, scanning electron microscopy, transmittance electron microscopy, UV−visible absorption, incident photon-to-cu...

Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides.

Abstract: Chalcogen vacancies are generally considered to be the most common point defects in transition metal dichalcogenide (TMD) semiconductors because of their low formation energy in vacuum and their frequent observation in transmission electron microscopy studies. Consequently, unexpected optical, transport, and catalytic properties in 2D-TMDs have been attributed to in-gap states associated with chalcogen vacancies, even in the absence of direct experimental evidence. Here, we combine low-temperature non-contact atomic force microscopy, scanning tunneling microscopy and spectroscopy, and state-of-the-art ab initio density functional theory and GW calculations to determine both the atomic structure and electronic properties of an abundant chalcogen-site point defect common to MoSe2 and WS2 monolayers grown by molecular beam epitaxy and chemical vapor deposition, respectively. Surprisingly, we observe no in-gap states. Our results strongly suggest that the common chalcogen defects in the described 2D-TMD semiconductors, measured in vacuum environment after gentle annealing, are oxygen substitutional defects, rather than vacancies.

Quantum Szilard Engine

Abstract: The Szilard engine (SZE) is the quintessence of Maxwell's demon, which can extract the work from a heat bath by utilizing information. We present the first complete quantum analysis of the SZE, and derive an analytic expression of the quantum-mechanical work performed by a quantum SZE containing an arbitrary number of molecules, where it is crucial to regard the process of insertion or removal of a wall as a legitimate thermodynamic process. We find that more (less) work can be extracted from the bosonic (fermionic) SZE due to the indistinguishability of identical particles.

Synthesis, characterization, and properties of fully aliphatic polyimides and their derivatives for microelectronics and optoelectronics applications

Abstract: Polyimides are one of the most important classes of polymers used in the microelectronics and photoelectronics industries. Because of their high thermal stability, chemical resistance, and good mechanical and electric properties, polyimides are often applied in photoresists, passivation and dielectric films, soft print circuit boards, and alignment films within displays. Recently, fully aliphatic and alicyclic polyimides have found applications as optoelectronics and inter layer dielectric materials, due to their good transparencies and low dielectric constants (e). The low molecular density, polarity and rare probability of forming inter- or intra-molecular charge transfers, resulting in lowering of the dielectric constant and high transparency, are the most striking characteristics of aliphatic polyimide. However, the ultimate end use of polyimides derived from aliphatic monomers is in their targeted applications that need less stringent thermal requirements. Much research effort has been exerted in the development of aliphatic polyimide with increased thermal and mechanical stabilities, while maintaining their transparencies and low dielectric constants, by the incorporation of rigid moieties. In this article, the recent research process in synthesizing fully aliphatic polyimides, with improved dimensional stability, high transparency and low e values, as well as the characterizations and future scope for their application in micro electric and photo-electronic industries, is reviewed.