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Institution

Solid State Physics Laboratory

FacilityDelhi, India
About: Solid State Physics Laboratory is a facility organization based out in Delhi, India. It is known for research contribution in the topics: Quantum dot & Dielectric. The organization has 1754 authors who have published 2597 publications receiving 50601 citations.


Papers
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Journal ArticleDOI
TL;DR: In this paper, the Miesowicz viscosity coefficients were determined by pressing the liquid crystal through a rectangular capillary which forms part of a thermostated set-up placed between the poles of a magnet in order to control the director n.
Abstract: To determine the Miesowicz viscosity coefficients a shear-flow set-up has been built, which allows the measurement of η1, η2, η3 and η12. These coefficients are determined by pressing the liquid crystal through a rectangular capillary which forms part of a thermostated set-up placed between the poles of a magnet in order to control the director n. In addition, the flow-alignment angle θ 0 is determined from the change in optical path difference between the ordinary and extraordinary components of polarized light, comparing the situation with n aligned along the flow-direction and with flow-alignment, respectively. Results are given for the complete set of viscosity coefficients of p-methoxy-p'-butylazoxybenzene and p, p'-dibutylazoxybenzene. The results show good agreement with visco-elastic ratios found with light-scattering techniques. Within the experimental accuracy the Onsager-Parodi relation is well fulfilled.

35 citations

Journal ArticleDOI
TL;DR: In this article, the authors used the universal dynamic response, sigma(omega) = sigma0 + aomega(s), to obtain the dc results of the glasses containing Li2Cl2.

35 citations

Journal ArticleDOI
TL;DR: In this paper, the authors developed an analytical device model for a graphene field effect transistor and calculated its currentvoltage characteristics at sufficiently high gate voltages when a n−p−n (p-n−p) lateral junction is formed in the transistor channel and the source-drain current is associated with the interband tunneling through this junction.
Abstract: We develop an analytical device model for a graphene field-effect transistor. Using this model, we calculate its current–voltage characteristics at sufficiently high gate voltages when a n–p–n (p–n–p) lateral junction is formed in the transistor channel and the source–drain current is associated with the interband tunneling through this junction.

35 citations

Journal ArticleDOI
TL;DR: Detailed X-ray diffraction and high-resolution transmission electron microscopy revealed the formation of single-crystalline-kesterite-phase Cu2ZnSnS4, and x-ray photoelectron spectroscopic studies of the as-synthesized samples confirmed that the oxidation states of the four elements match those of the bulk sample.
Abstract: A simple, yet novel hydrothermal method has been developed to synthesize surfactant-free Cu2ZnSnS4 nanocrystal ink in water. The environmentally friendly, 2-4 nm ultrafine particles are stable in water for several weeks. Detailed X-ray diffraction (XRD) and high-resolution transmission electron microscopy revealed the formation of single-crystalline-kesterite-phase Cu2ZnSnS4. Elemental mapping by scanning electron microscopy/energy dispersive spectrometry corroborated the presence of all four elements in a stoichiometric ratio with minor sulfur deficiency. Finally, Raman spectroscopy ruled out the possible presence of impurities of ZnS, Cu2SnS3, SnS, SnS2, Cu(2-x)S, or Sn2S3, which often interfere with the XRD and optical spectra of Cu2ZnSnS4. X-ray photoelectron spectroscopic studies of the as-synthesized samples confirmed that the oxidation states of the four elements match those of the bulk sample. Optical absorption analyses of thin film and solution samples showed high absorption efficiency (>10(4) cm(-1)) across the visible and near-infrared spectral regions and a band gap E(g) of 1.75 eV for the as-synthesized sample. A non-ohmic asymmetric rectifying response was observed in the I-V measurement at room temperature. The nonlinearity was more pronounced for this p-type semiconductor when the resistance was measured against temperature in the range 180-400 K, which was detected in the hot-point probe measurement.

35 citations


Authors

Showing all 1757 results

NameH-indexPapersCitations
Alain Dufresne11135845904
Yang Ren7988026341
Klaus Ensslin7063821385
Werner Wegscheider6993321984
Takashi Takahashi6542414234
Liu Hao Tjeng6432213752
Nicholas E. Geacintov6345315636
Manfred Sigrist6146818362
Thomas Ihn6147514159
Takafumi Sato5926311032
Christoph Stampfer5931514422
Christian Colliex5828914618
Takashi Mizokawa5740011697
Eberhard Bodenschatz5737413208
Bertram Batlogg551909459
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20231
202210
202174
202087
201992
201878