Institution
Solid State Physics Laboratory
Facility•Delhi, India•
About: Solid State Physics Laboratory is a facility organization based out in Delhi, India. It is known for research contribution in the topics: Quantum dot & Dielectric. The organization has 1754 authors who have published 2597 publications receiving 50601 citations.
Topics: Quantum dot, Dielectric, Thin film, Electron, Raman spectroscopy
Papers published on a yearly basis
Papers
More filters
••
TL;DR: In this paper, the Miesowicz viscosity coefficients were determined by pressing the liquid crystal through a rectangular capillary which forms part of a thermostated set-up placed between the poles of a magnet in order to control the director n.
Abstract: To determine the Miesowicz viscosity coefficients a shear-flow set-up has been built, which allows the measurement of η1, η2, η3 and η12. These coefficients are determined by pressing the liquid crystal through a rectangular capillary which forms part of a thermostated set-up placed between the poles of a magnet in order to control the director n. In addition, the flow-alignment angle θ 0 is determined from the change in optical path difference between the ordinary and extraordinary components of polarized light, comparing the situation with n aligned along the flow-direction and with flow-alignment, respectively. Results are given for the complete set of viscosity coefficients of p-methoxy-p'-butylazoxybenzene and p, p'-dibutylazoxybenzene. The results show good agreement with visco-elastic ratios found with light-scattering techniques. Within the experimental accuracy the Onsager-Parodi relation is well fulfilled.
35 citations
••
TL;DR: In this article, the authors used the universal dynamic response, sigma(omega) = sigma0 + aomega(s), to obtain the dc results of the glasses containing Li2Cl2.
35 citations
••
TL;DR: In this paper, the authors developed an analytical device model for a graphene field effect transistor and calculated its currentvoltage characteristics at sufficiently high gate voltages when a n−p−n (p-n−p) lateral junction is formed in the transistor channel and the source-drain current is associated with the interband tunneling through this junction.
Abstract: We develop an analytical device model for a graphene field-effect transistor. Using this model, we calculate its current–voltage characteristics at sufficiently high gate voltages when a n–p–n (p–n–p) lateral junction is formed in the transistor channel and the source–drain current is associated with the interband tunneling through this junction.
35 citations
••
TL;DR: Detailed X-ray diffraction and high-resolution transmission electron microscopy revealed the formation of single-crystalline-kesterite-phase Cu2ZnSnS4, and x-ray photoelectron spectroscopic studies of the as-synthesized samples confirmed that the oxidation states of the four elements match those of the bulk sample.
Abstract: A simple, yet novel hydrothermal method has been developed to synthesize surfactant-free Cu2ZnSnS4 nanocrystal ink in water. The environmentally friendly, 2-4 nm ultrafine particles are stable in water for several weeks. Detailed X-ray diffraction (XRD) and high-resolution transmission electron microscopy revealed the formation of single-crystalline-kesterite-phase Cu2ZnSnS4. Elemental mapping by scanning electron microscopy/energy dispersive spectrometry corroborated the presence of all four elements in a stoichiometric ratio with minor sulfur deficiency. Finally, Raman spectroscopy ruled out the possible presence of impurities of ZnS, Cu2SnS3, SnS, SnS2, Cu(2-x)S, or Sn2S3, which often interfere with the XRD and optical spectra of Cu2ZnSnS4. X-ray photoelectron spectroscopic studies of the as-synthesized samples confirmed that the oxidation states of the four elements match those of the bulk sample. Optical absorption analyses of thin film and solution samples showed high absorption efficiency (>10(4) cm(-1)) across the visible and near-infrared spectral regions and a band gap E(g) of 1.75 eV for the as-synthesized sample. A non-ohmic asymmetric rectifying response was observed in the I-V measurement at room temperature. The nonlinearity was more pronounced for this p-type semiconductor when the resistance was measured against temperature in the range 180-400 K, which was detected in the hot-point probe measurement.
35 citations
••
35 citations
Authors
Showing all 1757 results
Name | H-index | Papers | Citations |
---|---|---|---|
Alain Dufresne | 111 | 358 | 45904 |
Yang Ren | 79 | 880 | 26341 |
Klaus Ensslin | 70 | 638 | 21385 |
Werner Wegscheider | 69 | 933 | 21984 |
Takashi Takahashi | 65 | 424 | 14234 |
Liu Hao Tjeng | 64 | 322 | 13752 |
Nicholas E. Geacintov | 63 | 453 | 15636 |
Manfred Sigrist | 61 | 468 | 18362 |
Thomas Ihn | 61 | 475 | 14159 |
Takafumi Sato | 59 | 263 | 11032 |
Christoph Stampfer | 59 | 315 | 14422 |
Christian Colliex | 58 | 289 | 14618 |
Takashi Mizokawa | 57 | 400 | 11697 |
Eberhard Bodenschatz | 57 | 374 | 13208 |
Bertram Batlogg | 55 | 190 | 9459 |