scispace - formally typeset
Search or ask a question
Institution

Solid State Physics Laboratory

FacilityDelhi, India
About: Solid State Physics Laboratory is a facility organization based out in Delhi, India. It is known for research contribution in the topics: Quantum dot & Dielectric. The organization has 1754 authors who have published 2597 publications receiving 50601 citations.


Papers
More filters
Journal ArticleDOI
TL;DR: It is shown by ATR-FTIR spectroscopy that the H-bonds are weaker in multibilayers in excess water (see spectra), of biological relevance for water-mediated phenomena in membranes.
Abstract: Stronger or weaker H-bonds? H-bonds in interlamellar water in partially hydrated lipid multibilayers are stronger with respect to bulk water. In contrast, the authors show by ATR–FTIR spectroscopy that the H-bonds are weaker in multibilayers in excess water (see spectra). This finding is of biological relevance for water-mediated phenomena in membranes.

22 citations

Journal ArticleDOI
TL;DR: In this article, a cubic C-type or bixbyite structure family was synthesized by high energy ball milling (HEBM) by using the Rietveld method using regular TCH-pV functions and symmetrized cubic harmonics (anisotropic effects) for the refinement.
Abstract: A Y2O3:Yb nanoscale magnet that belongs to the cubic C-type or bixbyite structure family was synthesized by high energy ball milling (HEBM) An as-prepared sample (S1) was annealed at 650 °C (S2) and 950 °C (S3) Cation populations were determined by the refinement of site occupancies It was found that in S1 and S2 Yb3+ ions occupy exclusively the 8b (or C3i) position, whereas in S3 a small amount of Yb3+ is also located on Wyckoff-site 24d (or C2) X-ray powder diffraction line broadening analysis was done by using the Rietveld method using regular TCH-pV functions (isotropic effects) and symmetrized cubic harmonics (anisotropic effects) for the refinement The line broadening anisotropy decreases due to strain effects from S1 to S3, while the crystallite size anisotropy increases from S1 to S3 Transmission electron microscopy (TEM) and Raman spectroscopy were used to define the homogeneity, microstructure and to locally probe the structure of the samples S1–S3 Magnetic susceptibility results in the 2–300 K temperature regions were analysed by applying the first-order perturbation theory The mean energy gap between ground and excited crystal field levels (Ei), and their effective magnetic numbers Mieff, were determined The analysis of the paramagnetic temperature shows the absence of clusterization of the magnetic ions

22 citations

Journal ArticleDOI
TL;DR: In this article, the effect of pH of the precursor sol on the electrical and optical properties of the platinised silicon (Pt/TiN/SiO2/Si) and fused quartz substrates has been investigated.

22 citations

Journal ArticleDOI
TL;DR: On determine une bande interdite optique de 3,18 eV pour ZnGa 2 S 4 et de 2,60 eV Pour Zn Ga 2 S4 :Co 2+ pour spin-orbite.
Abstract: Polycrystals of ${\mathrm{ZnGa}}_{2}$${\mathrm{S}}_{4}$ and ${\mathrm{ZnGa}}_{2}$${\mathrm{S}}_{4}$:${\mathrm{Co}}^{2+}$ were prepared from high-purity elements at 1270 \ifmmode^\circ\else\textdegree\fi{}C. The optical-absorption spectra of these polycrystalline powders were measured in the wavelength region 300--3000 nm with use of an integrating sphere and photoacoustic spectrophotometer at 298 K. The optical energy gap is found to be 3.18 eV for the ${\mathrm{ZnGa}}_{2}$${\mathrm{S}}_{4}$ crystal and 2.60 eV for the ${\mathrm{ZnGa}}_{2}$${\mathrm{S}}_{4}$:${\mathrm{Co}}^{2+}$ crystal. The optical-absorption peaks in the measurement of ${\mathrm{ZnGa}}_{2}$${\mathrm{S}}_{4}$:${\mathrm{Co}}^{2+}$ crystal absorption spectrum at 3790, 6049, 13 725, 20 704, and 22 779 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ are found to be the electron transition of the ${\mathrm{Co}}^{2+}$ ion with ${\mathit{T}}_{\mathit{d}}$ symmetry from the ground state $^{4}$${\mathit{A}}_{2}$${(}^{4}$F) to the excited states $^{4}$${\mathit{T}}_{2}$${(}^{4}$F), $^{4}$${\mathit{T}}_{1}$${(}^{4}$F), $^{4}$${\mathit{T}}_{1}$${(}^{4}$P), $^{2}$${\mathit{T}}_{2}$${(}^{2}$G), and $^{2}$E${(}^{2}$G). The crystal-field parameter and the Racah parameter, which were obtained from the optical-absorption peaks, are found to be Dq=379 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ and B=560 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$, respectively. The $^{4}$${\mathit{T}}_{1}$${(}^{4}$P) state of the ${\mathrm{Co}}^{2+}$ ion splits into three state of ${\mathrm{\ensuremath{\Gamma}}}_{6}$, ${\mathrm{\ensuremath{\Gamma}}}_{8}$, and ${\mathrm{\ensuremath{\Gamma}}}_{8}$+${\mathrm{\ensuremath{\Gamma}}}_{7}$ by first-order spin-orbit coupling effects at 298 K. The value of the spin-orbit coupling parameter was \ensuremath{\lambda}=-436 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$.

22 citations

Journal ArticleDOI
TL;DR: In this article, the authors investigated the role of the band gap in the evolution of the pseudospin in a dual-gated bilayer graphene device and showed that the chirality in the energy range close to the gap can be attributed to the breaking of the Chirality.
Abstract: Chirality is one of the key features governing the electronic properties of single- and bilayer graphene: the basics of this concept and its consequences on transport are presented in this review. By breaking the inversion symmetry, a band gap can be opened in the band structures of both systems at the K-point. This leads to interesting consequences for the pseu-dospin and, therefore, for the chirality. These consequences can be accessed by investigating the evolution of the Berry phase in such systems. Experimental observations of Fabry–Perot interference in a dual-gated bilayer graphene device are finally presented and are used to illustrate the role played by the band gap on the evolution of the pseudospin. The presented results can be attributed to the breaking of the chirality in the energy range close to the gap.

22 citations


Authors

Showing all 1757 results

NameH-indexPapersCitations
Alain Dufresne11135845904
Yang Ren7988026341
Klaus Ensslin7063821385
Werner Wegscheider6993321984
Takashi Takahashi6542414234
Liu Hao Tjeng6432213752
Nicholas E. Geacintov6345315636
Manfred Sigrist6146818362
Thomas Ihn6147514159
Takafumi Sato5926311032
Christoph Stampfer5931514422
Christian Colliex5828914618
Takashi Mizokawa5740011697
Eberhard Bodenschatz5737413208
Bertram Batlogg551909459
Network Information
Related Institutions (5)
National Institute for Materials Science
29.2K papers, 880.9K citations

86% related

Indian Institute of Technology Madras
36.4K papers, 590.4K citations

84% related

Forschungszentrum Jülich
35.6K papers, 994.1K citations

84% related

Indian Institutes of Technology
40.1K papers, 652.9K citations

83% related

Tata Institute of Fundamental Research
21.7K papers, 622.3K citations

83% related

Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20231
202210
202174
202087
201992
201878