Solid State Physics Laboratory

About: Solid State Physics Laboratory is a facility organization based out in Delhi, India. It is known for research contribution in the topics: Quantum dot & Dielectric. The organization has 1754 authors who have published 2597 publications receiving 50601 citations.

Passivation of edge states in etched InAs sidewalls

Abstract: We investigate different methods of passivating sidewalls of wet etched InAs heterostructures in order to suppress inherent edge conduction that is presumed to occur due to band bending at the surface, leading to charge carrier accumulation. Passivation techniques including sulfur, positively charged compensation dopants, and plasma enhanced chemical vapor deposition of SiNx do not show an improvement. Surprisingly, atomic layer deposition of Al2O3 leads to an increase in the edge resistivity of more than an order of magnitude. While the mechanism behind this change is not fully understood, possible reasons are suggested.

Origins of conductance anomalies in a p-type GaAs quantum point contact

Abstract: Low-temperature transport measurements on a p-GaAs quantum point contact are presented which reveal the presence of a conductance anomaly that is markedly different from the conventional “07 anomaly” A lateral shift by asymmetric gating of the conducting channel is utilized to identify and separate different conductance anomalies of local and generic origins experimentally While the more generic 07 anomaly is not directly affected by changing the gate configuration, a model is proposed which attributes the additional conductance features to a gate-dependent coupling of the propagating states to localized states emerging due to a nearby potential imperfection Finite bias conductivity measurements reveal the interplay between the two anomalies consistently with a two-impurity Kondo model

Topological insulators: Oscillations in the ribbons

Abstract: The observation of Aharonov–Bohm oscillations in nanoribbons of Bi2Se3 opens the way for electronic transport experiments in nanoscale three-dimensional topological insulators.