Institution
Solid State Physics Laboratory
Facility•Delhi, India•
About: Solid State Physics Laboratory is a facility organization based out in Delhi, India. It is known for research contribution in the topics: Quantum dot & Dielectric. The organization has 1754 authors who have published 2597 publications receiving 50601 citations.
Topics: Quantum dot, Dielectric, Thin film, Electron, Raman spectroscopy
Papers published on a yearly basis
Papers
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TL;DR: In this article, the authors demonstrate a coherent spin shuttle through a GaAs/AlGaAs quadruple-quantum-dot array, starting with two electrons in a spin-singlet state in the first dot, they shuttle one electron over to either the second, third, or fourth dot.
Abstract: We demonstrate a coherent spin shuttle through a GaAs/AlGaAs quadruple-quantum-dot array. Starting with two electrons in a spin-singlet state in the first dot, we shuttle one electron over to either the second, third, or fourth dot. We observe that the separated spin-singlet evolves periodically into the m = 0 spin-triplet and back before it dephases due to nuclear spin noise. We attribute the time evolution to differences in the local Zeeman splitting between the respective dots. With the help of numerical simulations, we analyze and discuss the visibility of the singlet-triplet oscillations and connect it to the requirements for coherent spin shuttling in terms of the inter-dot tunnel coupling strength and rise time of the pulses. The distribution of entangled spin pairs through tunnel coupled structures may be of great utility for connecting distant qubit registers on a chip. A technique enables transferring single spin qubits across an array of quantum dots while their phase coherence is preserved. In this manner, spatially separated registers of stationary qubits can be coherently linked, allowing building scalable qubit networks. Scientists at QuTech from Delft University of Technology spatially shuttle qubits by preparing empty quantum dots and adiabatically shuttling electrons through these dots using tailored gate voltage pulses. Through interference measurements, they observe phase oscillations that allow quantifying the fidelity of the shuttling operation. Numerical simulations support the estimated fidelity of single-spin transfer and point at possible improvements for separating entangled spin pairs.
100 citations
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TL;DR: The experimental observation of Fabry-Pérot interference in the conductance of a gate-defined cavity in a dual-gated bilayer graphene device is reported and the gap is shown to destroy the perfect reflection for electrons traversing the barrier with normal incidence (anti-Klein tunneling).
Abstract: We report the experimental observation of Fabry-Perot interference in the conductance of a gate-defined cavity in a dual-gated bilayer graphene device. The high quality of the bilayer graphene flake, combined with the device’s electrical robustness provided by the encapsulation between two hexagonal boron nitride layers, allows us to observe ballistic phase-coherent transport through a 1-μm-long cavity. We confirm the origin of the observed interference pattern by comparing to tight-binding calculations accounting for the gate-tunable band gap. The good agreement between experiment and theory, free of tuning parameters, further verifies that a gap opens in our device. The gap is shown to destroy the perfect reflection for electrons traversing the barrier with normal incidence (anti-Klein tunneling). The broken anti-Klein tunneling implies that the Berry phase, which is found to vary with the gate voltages, is always involved in the Fabry-Perot oscillations regardless of the magnetic field, in sharp contrast with single-layer graphene.
99 citations
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TL;DR: In this paper, structural, electrical, and light up conversion properties of Erbium (Er) substituted bismuth titanate (Bi4� xErxTi3O12) ceramics have been investigated.
98 citations
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TL;DR: This demonstration of Nagaoka ferromagnetism highlights that quantum simulators can be used to study physical phenomena that have not yet been observed in any experimental system and constitutes an important step towards large-scale quantum dot simulators of correlated electron systems.
Abstract: Engineered, highly controllable quantum systems are promising simulators of emergent physics beyond the simulation capabilities of classical computers1. An important problem in many-body physics is itinerant magnetism, which originates purely from long-range interactions of free electrons and whose existence in real systems has been debated for decades2,3. Here we use a quantum simulator consisting of a four-electron-site square plaquette of quantum dots4 to demonstrate Nagaoka ferromagnetism5. This form of itinerant magnetism has been rigorously studied theoretically6–9 but has remained unattainable in experiments. We load the plaquette with three electrons and demonstrate the predicted emergence of spontaneous ferromagnetic correlations through pairwise measurements of spin. We find that the ferromagnetic ground state is remarkably robust to engineered disorder in the on-site potentials and we can induce a transition to the low-spin state by changing the plaquette topology to an open chain. This demonstration of Nagaoka ferromagnetism highlights that quantum simulators can be used to study physical phenomena that have not yet been observed in any experimental system. The work also constitutes an important step towards large-scale quantum dot simulators of correlated electron systems.
98 citations
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TL;DR: The fabrication of electrostatically defined nanostructures in encapsulated bilayer graphene, with leakage resistances below depletion gates as high as R ∼ 10 GΩ, exceeds previously reported values of R = 10-100 kΩ.
Abstract: We report the fabrication of electrostatically defined nanostructures in encapsulated bilayer graphene, with leakage resistances below depletion gates as high as R ∼ 10 GΩ. This exceeds previously reported values of R = 10–100 kΩ.1−3 We attribute this improvement to the use of a graphite back gate. We realize two split gate devices which define an electronic channel on the scale of the Fermi-wavelength. A channel gate covering the gap between the split gates varies the charge carrier density in the channel. We observe device-dependent conductance quantization of ΔG = 2e2/h and ΔG = 4e2/h. In quantizing magnetic fields normal to the sample plane, we recover the four-fold Landau level degeneracy of bilayer graphene. Unexpected mode crossings appear at the crossover between zero magnetic field and the quantum Hall regime.
97 citations
Authors
Showing all 1757 results
Name | H-index | Papers | Citations |
---|---|---|---|
Alain Dufresne | 111 | 358 | 45904 |
Yang Ren | 79 | 880 | 26341 |
Klaus Ensslin | 70 | 638 | 21385 |
Werner Wegscheider | 69 | 933 | 21984 |
Takashi Takahashi | 65 | 424 | 14234 |
Liu Hao Tjeng | 64 | 322 | 13752 |
Nicholas E. Geacintov | 63 | 453 | 15636 |
Manfred Sigrist | 61 | 468 | 18362 |
Thomas Ihn | 61 | 475 | 14159 |
Takafumi Sato | 59 | 263 | 11032 |
Christoph Stampfer | 59 | 315 | 14422 |
Christian Colliex | 58 | 289 | 14618 |
Takashi Mizokawa | 57 | 400 | 11697 |
Eberhard Bodenschatz | 57 | 374 | 13208 |
Bertram Batlogg | 55 | 190 | 9459 |