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Institution

Solid State Physics Laboratory

FacilityDelhi, India
About: Solid State Physics Laboratory is a facility organization based out in Delhi, India. It is known for research contribution in the topics: Quantum dot & Dielectric. The organization has 1754 authors who have published 2597 publications receiving 50601 citations.


Papers
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Journal ArticleDOI
TL;DR: In this article, high-mobility two-dimensional electron gases in AlxGa1-xAs heterostructures were investigated by employing Schottkygate-dependent measurements of the samples' electron density and mobility.
Abstract: In this work, we investigate high-mobility two-dimensional electron gases in AlxGa1-xAs heterostructures by employing Schottky-gate-dependent measurements of the samples' electron density and mobility. Surprisingly, we found that two different sample configurations can be set in situ with mobilities differing by a factor of more than two in a wide range of densities. This observation is discussed in the context of charge redistributions between the doping layers and is relevant for the design of future gateable high-mobility electron gases.

22 citations

Journal ArticleDOI
TL;DR: In this paper, the effect of multilayer relaxation on melting was investigated for a high cohesion metal like copper, and it was shown that surface contraction has drastic effect on melting making a loose-packed surface melt later than a close-packed one.

22 citations

Journal ArticleDOI
TL;DR: In this article, it was shown that the isomer shift of Mossbauer nuclei in transition metal alloys can be quantitatively described in terms of an atomic cell model.

22 citations

Journal ArticleDOI
TL;DR: In this paper, the conductance of a finite quantum dot network is studied as a function of interdot coupling, where Coulomb resonances with on average increasing charging energies are observed.
Abstract: The conductance through a finite quantum dot network is studied as a function of interdot coupling. As the coupling is reduced, the system undergoes a transition from the antidot regime to the tight binding limit, where Coulomb resonances with on average increasing charging energies are observed. Percolation models are used to describe the conduction in the open and closed regime and contributions from different blockaded regions can be identified. A strong negative average magnetoresistance in the Coulomb blockade regime is in good quantitative agreement with theoretical predictions for magnetotunneling between individual quantum dots.

22 citations

Journal ArticleDOI
TL;DR: In this article, the authors study theoretically the plasma instability in a heterostructure similar to a high-electron mobility transistor, which is associated with the transit-time effects of the electrons injected from the channel into the gate layer due to tunnelling or thermionic emission.
Abstract: We study theoretically the plasma instability in a heterostructure similar to a high-electron mobility transistor. The instability under consideration is associated with the transit-time effects of the electrons injected from the channel into the gate layer due to tunnelling or thermionic emission. The frequencies of the self-excited plasma oscillations, which fall within the terahertz range, are determined by the electron concentration in the channel and its length. We find the instability criteria expressed via the structural parameters and applied voltage.

22 citations


Authors

Showing all 1757 results

NameH-indexPapersCitations
Alain Dufresne11135845904
Yang Ren7988026341
Klaus Ensslin7063821385
Werner Wegscheider6993321984
Takashi Takahashi6542414234
Liu Hao Tjeng6432213752
Nicholas E. Geacintov6345315636
Manfred Sigrist6146818362
Thomas Ihn6147514159
Takafumi Sato5926311032
Christoph Stampfer5931514422
Christian Colliex5828914618
Takashi Mizokawa5740011697
Eberhard Bodenschatz5737413208
Bertram Batlogg551909459
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20231
202210
202174
202087
201992
201878