Institution
Solid State Physics Laboratory
Facility•Delhi, India•
About: Solid State Physics Laboratory is a facility organization based out in Delhi, India. It is known for research contribution in the topics: Quantum dot & Dielectric. The organization has 1754 authors who have published 2597 publications receiving 50601 citations.
Topics: Quantum dot, Dielectric, Thin film, Electron, Raman spectroscopy
Papers published on a yearly basis
Papers
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TL;DR: In this paper, the crystal structure and microstructure of Ni09Zn01O were refined at room temperature in both the Fm{\overline 3}m and R{overline 2}m space groups, and it was shown that below the Neel point (458 K), where magnetic ordering triggers the presence of a trigonal strain, the common usage of a higher-symmetry non-admissible space group for crystal structure analysis via the Rietveld method may result in both an incorrect structure description and incorrect micro-structure parameters
Abstract: The crystal structure and microstructure of as-prepared and annealed Ni09Zn01O were refined at room temperature in both the Fm{\overline 3}m and R{\overline 3}m space groups It is shown that below the Neel point (458 K), where magnetic ordering triggers the presence of a trigonal strain, the common usage of a higher-symmetry non-admissible space group for crystal structure and microstructure analysis via the Rietveld method may result in both an incorrect structure description and incorrect microstructure parameters (size and strain) More realistic microstructure data can be obtained by whole powder pattern modelling of the powder diffraction data Increasing the annealing temperature causes a reduction of the trigonal distortion as well as an increase in domain size Simultaneously, the Raman spectra become less resolved, a clear indication of domain growth and structural evolution of the structure towards cubic symmetry (R{\overline 3}m → Fm{\overline 3}m)
28 citations
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TL;DR: In this article, the effects of excessive heating of a Titanium microbolometer were investigated and it was shown that even though the power supplied in pulse mode cannot damage the element physically, it may be sufficient for significant performance degradations.
28 citations
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TL;DR: In this paper, the Dresselhaus spin-orbit interaction in a (110)-oriented GaAs quantum well was quantitatively investigated by means of time-and spatially resolved Kerr rotation.
Abstract: The Dresselhaus spin-orbit interaction is quantitatively investigated in a (110)-oriented GaAs quantum well by means of time- and spatially resolved Kerr rotation. The experimental results directly demonstrate a unidirectional out-of-plane spin-orbit interaction that linearly depends on the electron momentum along the $[1\overline{1}0]$ direction and vanishes for the electron momentum along the [001] direction. Spatially resolved measurements of the diffusion-driven spin precession dynamics provide evidence of the formation of a persistent spin-helix state in this system.
28 citations
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TL;DR: This work implements a mesoscopic coupled dot-cavity system in a high-mobility two-dimensional electron gas, and obtains an extended spin-singlet state in the regime of strong dot-Cavity coupling, presenting a viable route for nonlocal spin coupling that is applicable for quantum information processing.
Abstract: Quantum engineering requires controllable artificial systems with quantum coherence exceeding the device size and operation time. This can be achieved with geometrically confined low-dimensional electronic structures embedded within ultraclean materials, with prominent examples being artificial atoms (quantum dots) and quantum corrals (electronic cavities). Combining the two structures, we implement a mesoscopic coupled dot-cavity system in a high-mobility two-dimensional electron gas, and obtain an extended spin-singlet state in the regime of strong dot-cavity coupling. Engineering such extended quantum states presents a viable route for nonlocal spin coupling that is applicable for quantum information processing.
28 citations
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TL;DR: In this paper, the role of hydrogen incorporation in H2/CH4 reactive ion etching induced type-conversion of p-type HgCdTe is investigated.
Abstract: The role of hydrogen incorporation in H2/CH4 reactive ion etching (RIE) induced type-conversion of p-type HgCdTe is investigated. A model is proposed in which hydrogen is incorporated into the HgCdTe crystal lattice in at least three different forms. It is proposed that the junction formation mechanism is a mixture of RIE-induced damage and Hg interstitial formation to which hydrogen forms strong bonds, and hydrogen-induced neutralization of acceptors. Confirmation of the model is presented based on experimental secondary ion mass spectroscopy of RIE-induced junctions, transport measurements reported previously, and initial diode bake stability testing.
28 citations
Authors
Showing all 1757 results
Name | H-index | Papers | Citations |
---|---|---|---|
Alain Dufresne | 111 | 358 | 45904 |
Yang Ren | 79 | 880 | 26341 |
Klaus Ensslin | 70 | 638 | 21385 |
Werner Wegscheider | 69 | 933 | 21984 |
Takashi Takahashi | 65 | 424 | 14234 |
Liu Hao Tjeng | 64 | 322 | 13752 |
Nicholas E. Geacintov | 63 | 453 | 15636 |
Manfred Sigrist | 61 | 468 | 18362 |
Thomas Ihn | 61 | 475 | 14159 |
Takafumi Sato | 59 | 263 | 11032 |
Christoph Stampfer | 59 | 315 | 14422 |
Christian Colliex | 58 | 289 | 14618 |
Takashi Mizokawa | 57 | 400 | 11697 |
Eberhard Bodenschatz | 57 | 374 | 13208 |
Bertram Batlogg | 55 | 190 | 9459 |