Journal ArticleDOI
1.8 mΩ·cm2 vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation
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TLDR
In this paper, a redesigned epitaxial layer structure with a regular hexagonal trench gate layout was proposed to reduce the specific on-resistance to as low as 1.8 mΩcm2 while obtaining a sufficient blocking voltage for 1.2kV-class operation.Abstract:
In this paper, we report on 1.2-kV-class vertical GaN-based trench metal–oxide–semiconductor field-effect transistors (MOSFETs) on a free-standing GaN substrate with a low specific on-resistance. A redesigned epitaxial layer structure following our previous work with a regular hexagonal trench gate layout enables us to reduce the specific on-resistance to as low as 1.8 mΩcm2 while obtaining a sufficient blocking voltage for 1.2-kV-class operation. Normally-off operation with a threshold voltage of 3.5 V is also demonstrated. To the best of our knowledge, this is the first report on vertical GaN-based MOSFETs with a specific on-resistance of less than 2 mΩcm2.read more
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Proceedings ArticleDOI
State-of-the-art GaN vertical power devices
TL;DR: In this paper, the authors reviewed the recent progress and developing issues of GaN vertical power devices and proposed a GaN-based vertical power device with 2kV level pn diodes and 1.5kV transistors.
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Investigation of Al2O3/GaN interface properties by sub-bandgap photo-assisted capacitance-voltage technique
Yoshihiro Irokawa,Toshihide Nabatame,Kazuya Yuge,Akira Uedono,Akihiko Ohi,Naoki Ikeda,Yasuo Koide +6 more
TL;DR: In this article, the authors used sub-bandgap photo-assisted capacitance-voltage measurements to investigate the interface state density of Al2O3/n-GaN capacitors fabricated on free-standing GaN substrates.
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High quality GaN crystal grown by hydride vapor-phase epitaxy on SCAAT TM
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A Strategic Review on Gallium Oxide Based Power Electronics: Recent Progress and Future Prospects
TL;DR: In this paper , a detailed review of Ga 2 O 3 based power devices with detailed discussion on the basic parameters such as V br , R on and leakage current along with the factors critically affecting them is presented.
Proceedings ArticleDOI
1 kV field plated in-situ oxide, GaN interlayer based vertical trench MOSFET (OG-FET)
TL;DR: In this paper, an OG-FET with field plate-based edge termination was presented, which achieved an enhanced channel mobility by inserting a MOCVD-regrown GaN interlayer between the trenched structure and the in-situ gate dielectric.
References
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Journal ArticleDOI
Hole Compensation Mechanism of P-Type GaN Films
TL;DR: In this paper, a hydrogenation process whereby acceptor-H neutral complexes are formed in p-type GaN films was proposed, which causes hole compensation, and deep-level and weak blue emissions in photoluminescence.
Journal ArticleDOI
High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates
TL;DR: In this article, a self-aligned "slant-field-plate" technology is presented as an improvement over the discrete multiple field plates for high breakdown voltage AlGaN/GaN HEMTs.