Journal ArticleDOI
1.8 mΩ·cm2 vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation
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TLDR
In this paper, a redesigned epitaxial layer structure with a regular hexagonal trench gate layout was proposed to reduce the specific on-resistance to as low as 1.8 mΩcm2 while obtaining a sufficient blocking voltage for 1.2kV-class operation.Abstract:
In this paper, we report on 1.2-kV-class vertical GaN-based trench metal–oxide–semiconductor field-effect transistors (MOSFETs) on a free-standing GaN substrate with a low specific on-resistance. A redesigned epitaxial layer structure following our previous work with a regular hexagonal trench gate layout enables us to reduce the specific on-resistance to as low as 1.8 mΩcm2 while obtaining a sufficient blocking voltage for 1.2-kV-class operation. Normally-off operation with a threshold voltage of 3.5 V is also demonstrated. To the best of our knowledge, this is the first report on vertical GaN-based MOSFETs with a specific on-resistance of less than 2 mΩcm2.read more
Citations
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Journal ArticleDOI
Comprehensive Design of Device Parameters for GaN Vertical Trench MOSFETs
Liu Shuang,Song Xiufeng,Jincheng Zhang,Shenglei Zhao,Jun Luo,Hong Zhang,Yachao Zhang,Zhang Weihang,Hong Zhou,Zhihong Liu,Yue Hao +10 more
TL;DR: The results indicate there exists large optimization room for fabricated GaN vertical trench MOSFETs, and the device characteristics can be further improved through the methodology in this paper for high power and high voltage applications.
Journal ArticleDOI
Anomalous dislocation annihilation behavior observed in a GaN crystal grown on point seeds by the Na-flux method
Masayuki Imanishi,Kanako Okumura,Kousuke Nakamura,Tomoko Kitamura,Keisuke Kakinouchi,Kosuke Murakami,Masashi Yoshimura,Yu Fujita,Yoshiyuki Tsusaka,Junji Matsui,Yusuke Mori +10 more
TL;DR: In this article, the authors investigated the mechanism behind the reduction of dislocation density in the GaN wafer by evaluating the three-dimensional behavior of dislocations using multiphoton-excitation photoluminescence images.
Journal ArticleDOI
Structural disorder and in-gap states of Mg-implanted GaN films evaluated by photothermal deflection spectroscopy
Masatomo Sumiya,Kiyotaka Fukuda,Shinya Takashima,Shigenori Ueda,Takeyoshi Onuma,Tomohiro Yamaguchi,Tohru Honda,Akira Uedono +7 more
TL;DR: In this article, the structure of the valence band maximum (VBM) and deep-level defects for box-profile Mg-ion implanted (4.5× 1.9 cm−3) GaN samples are characterized by photothermal deflection spectroscopy (PDS), and the variations caused by the thermal annealing is discussed with respect to Urbach energy, defect levels in the band gap and photoluminescence.
Journal ArticleDOI
Monolithically Integrated GaN LED/Quasi-Vertical Power U-Shaped Trench-Gate MOSFET Pairs Using Selective Epi Removal
Zhibo Guo,Mayank T. Bulsara,T. Paul Chow,Collin Hitchcock,Christian Wetzel,Robert F. Karlicek,Guanxi Piao,Yoshiki Yano,Shuuichi Koseki,Toshiya Tabuchi,Koh Matsumoto +10 more
TL;DR: In this article, a monolithically integrated light-emitting diode (LED) and quasi-vertical U-shaped trench-gate metal-oxide-semiconductor field effect transistor (UMOSFET) in GaN was demonstrated.
Journal ArticleDOI
(111) vertical-type two-dimensional hole gas diamond MOSFETs with hexagonal trench structures
TL;DR: In this article, a p-channel vertical-type two-dimensional hole gas (2DHG) diamond metal-oxide-semiconductor field effect transistor (MOSFET) with a hexagonal trench structure obtained using (111) diamond was presented.
References
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Journal ArticleDOI
Hole Compensation Mechanism of P-Type GaN Films
TL;DR: In this paper, a hydrogenation process whereby acceptor-H neutral complexes are formed in p-type GaN films was proposed, which causes hole compensation, and deep-level and weak blue emissions in photoluminescence.
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High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates
TL;DR: In this article, a self-aligned "slant-field-plate" technology is presented as an improvement over the discrete multiple field plates for high breakdown voltage AlGaN/GaN HEMTs.