Journal ArticleDOI
1.8 mΩ·cm2 vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation
TLDR
In this paper, a redesigned epitaxial layer structure with a regular hexagonal trench gate layout was proposed to reduce the specific on-resistance to as low as 1.8 mΩcm2 while obtaining a sufficient blocking voltage for 1.2kV-class operation.Abstract:
In this paper, we report on 1.2-kV-class vertical GaN-based trench metal–oxide–semiconductor field-effect transistors (MOSFETs) on a free-standing GaN substrate with a low specific on-resistance. A redesigned epitaxial layer structure following our previous work with a regular hexagonal trench gate layout enables us to reduce the specific on-resistance to as low as 1.8 mΩcm2 while obtaining a sufficient blocking voltage for 1.2-kV-class operation. Normally-off operation with a threshold voltage of 3.5 V is also demonstrated. To the best of our knowledge, this is the first report on vertical GaN-based MOSFETs with a specific on-resistance of less than 2 mΩcm2.read more
Citations
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Proceedings ArticleDOI
Vertical GaN Split Gate Trench MOSFET with Improved High Frequency FOM
TL;DR: In this article, a new vertical GaN split gate trench MOSFET with a conventional trench gate MOS-FET for 600 V switching applications has been proposed, which exhibits 7 times lower HF-FOM (C rss ×R on ) and 3 times lower FOM (Q GD × R on ) without increase in the specific on-resistance, when compared to that of conventional MOS FET.
Journal ArticleDOI
Vertical GaN and Vertical Ga2O3 Power Transistors: Status and Challenges
Chirag Gupta,Shubhra S. Pasayat +1 more
TL;DR: In this paper , a comprehensive review of all major vertical GaN and Ga2O3 power transistors is provided while discussing their features, advantages, and challenges that need to be solved.
Proceedings ArticleDOI
Vertical GaN-based power devices on bulk GaN substrates for future power switching systems
Daisuke Shibata,Ryo Kajitani,Hiroyuki Handa,Nanako Shiozaki,Shinji Ujita,Masahiro Ogawa,Kenichiro Tanaka,Satoshi Tamura,Tsuguyasu Hatsuda,Masahiro Ishida,Tetsuzo Ueda +10 more
TL;DR: In this article, a high-current vertical GaN-based transistor with low specific on-state resistance of 1.0 mΩ·cm2 and high off-state breakdown voltage of 0.7 kV was proposed.
Journal ArticleDOI
High reactivity of H2O vapor on GaN surfaces
Masatomo Sumiya,Masato Sumita,Yasutaka Tsuda,Tetsuya Sakamoto,Liwen Sang,Yoshitomo Harada,Akitaka Yoshigoe +6 more
TL;DR: In this article , a real-time X-ray photoelectron spectroscopy was used to observe the dynamic adsorption behavior of GaN surfaces upon irradiation of H2O, O2, N2O and NO gases.
References
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Journal ArticleDOI
Hole Compensation Mechanism of P-Type GaN Films
TL;DR: In this paper, a hydrogenation process whereby acceptor-H neutral complexes are formed in p-type GaN films was proposed, which causes hole compensation, and deep-level and weak blue emissions in photoluminescence.
Journal ArticleDOI
High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates
TL;DR: In this article, a self-aligned "slant-field-plate" technology is presented as an improvement over the discrete multiple field plates for high breakdown voltage AlGaN/GaN HEMTs.