Journal ArticleDOI
1.8 mΩ·cm2 vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation
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TLDR
In this paper, a redesigned epitaxial layer structure with a regular hexagonal trench gate layout was proposed to reduce the specific on-resistance to as low as 1.8 mΩcm2 while obtaining a sufficient blocking voltage for 1.2kV-class operation.Abstract:
In this paper, we report on 1.2-kV-class vertical GaN-based trench metal–oxide–semiconductor field-effect transistors (MOSFETs) on a free-standing GaN substrate with a low specific on-resistance. A redesigned epitaxial layer structure following our previous work with a regular hexagonal trench gate layout enables us to reduce the specific on-resistance to as low as 1.8 mΩcm2 while obtaining a sufficient blocking voltage for 1.2-kV-class operation. Normally-off operation with a threshold voltage of 3.5 V is also demonstrated. To the best of our knowledge, this is the first report on vertical GaN-based MOSFETs with a specific on-resistance of less than 2 mΩcm2.read more
Citations
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Journal ArticleDOI
Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage
Takuya Maeda,Tetsuo Narita,Masakazu Kanechika,Tsutomu Uesugi,Tetsu Kachi,Tsunenobu Kimoto,Masahiro Horita,Jun Suda,Jun Suda +8 more
TL;DR: In this paper, the photocurrent induced by sub-bandgap light absorption due to the Franz-Keldysh effect was observed in GaN p-n junction diodes under a high reverse bias voltage.
Journal ArticleDOI
Direct wafer bonding of GaN-SiC for high power GaN-on-SiC devices
TL;DR: In this paper, surface activated bonding (SAB) method was employed to fabricate GaN-on-SiC structure without a conventional transition layer via direct wafer bonding at room temperature.
Journal ArticleDOI
Mg-implanted bevel edge termination structure for GaN power device applications
M. Matys,Takashi Ishida,Kyung Pil Nam,Hideki Sakurai,Tetsuo Narita,Tsutomu Uesugi,Michal Bockowski,Michal Bockowski,Jun Suda,Tetsu Kachi +9 more
TL;DR: In this article, the edge termination for GaN-based one-sided abrupt p-n junctions is demonstrated using a combination of a shallow negative bevel mesa and selective-area p-type doping under the mesa.
Journal ArticleDOI
Carbon dangling-bond center (carbon Pb center) at 4H-SiC(0001)/SiO2 interface
Takahide Umeda,Takuma Kobayashi,Mitsuru Sometani,Hiroshi Yano,Yu-ichiro Matsushita,Shinsuke Harada +5 more
TL;DR: In this article, the authors identify a carbon dangling-bond center intrinsically formed at thermally oxidized 4H-SiC(0001)/SiO2 interfaces and first-principles calculations demonstrate that this center, which they name "the PbC center,” is formed at a carbon adatom on the 4H -SiC (0001) honeycomb-like structure.
Proceedings ArticleDOI
Vertical GaN power FET on bulk GaN substrate
TL;DR: In this paper, a novel vertical FET (VFET) structure on bulk GaN substrate has been developed to address the challenges of conventional power vertical GaN transistors (Fig. 1).
References
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Journal ArticleDOI
Hole Compensation Mechanism of P-Type GaN Films
TL;DR: In this paper, a hydrogenation process whereby acceptor-H neutral complexes are formed in p-type GaN films was proposed, which causes hole compensation, and deep-level and weak blue emissions in photoluminescence.
Journal ArticleDOI
High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates
TL;DR: In this article, a self-aligned "slant-field-plate" technology is presented as an improvement over the discrete multiple field plates for high breakdown voltage AlGaN/GaN HEMTs.