Journal ArticleDOI
1.8 mΩ·cm2 vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation
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TLDR
In this paper, a redesigned epitaxial layer structure with a regular hexagonal trench gate layout was proposed to reduce the specific on-resistance to as low as 1.8 mΩcm2 while obtaining a sufficient blocking voltage for 1.2kV-class operation.Abstract:
In this paper, we report on 1.2-kV-class vertical GaN-based trench metal–oxide–semiconductor field-effect transistors (MOSFETs) on a free-standing GaN substrate with a low specific on-resistance. A redesigned epitaxial layer structure following our previous work with a regular hexagonal trench gate layout enables us to reduce the specific on-resistance to as low as 1.8 mΩcm2 while obtaining a sufficient blocking voltage for 1.2-kV-class operation. Normally-off operation with a threshold voltage of 3.5 V is also demonstrated. To the best of our knowledge, this is the first report on vertical GaN-based MOSFETs with a specific on-resistance of less than 2 mΩcm2.read more
Citations
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Journal ArticleDOI
Comparative Analysis of the GaN Nonpolar Plane Morphology by Wet Treatment and Its Effect on Electrical Properties in Trench MOSFET
TL;DR: In this article , the morphological characteristics of the GaN nonpolar sidewalls with different crystal plane orientations were studied under various TMAH wet treatment conditions, and the effect of different morphological features on device carrier mobility was modeled and analyzed.
Journal ArticleDOI
Stoichiometric imbalances in Mg-implanted GaN
Journal ArticleDOI
Interfacial Charge Dynamics in Metal-Oxide–Semiconductor Structures: The Effect of Deep Traps and Acceptor Levels in Ga N
TL;DR: In this paper, the effects of trap concentrations and acceptor levels in magnesium-doped field effect transistors on interface charges in the semiconductor-oxide interface were investigated and the observed clockwise hysteresis in the transfer characteristics and elucidate the underlying physical mechanism causing it.
Analysis and Optimization for Characteristics of Vertical GaN Junctionless MOSFETs Depending on Specifications of GaN Substrates
H. An,Sang Ho Lee,Jin Joo Park,S. Min,G. Kim,Young Jun Yoon,Jae Hwa Seo,Min Su Cho,Jae-Won Jang,Jin-Hyuk Bae,Sin-Hyung Lee,In Man Kang +11 more
Proceedings ArticleDOI
Vertical GaN junction barrier schottky diodes by Mg implantation and activation annealing
Andrew D. Koehler,Travis J. Anderson,Marko J. Tadjer,Boris N. Feigelson,Karl D. Hobart,Francis J. Kub,Anindya Nath,David I. Shahin +7 more
TL;DR: In this article, a vertical GaN junction barrier Schottky (JBS) diodes are fabricated on hydride vapor phase epitaxy (HVPE) GaN substrates.
References
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Journal ArticleDOI
Hole Compensation Mechanism of P-Type GaN Films
TL;DR: In this paper, a hydrogenation process whereby acceptor-H neutral complexes are formed in p-type GaN films was proposed, which causes hole compensation, and deep-level and weak blue emissions in photoluminescence.
Journal ArticleDOI
High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates
TL;DR: In this article, a self-aligned "slant-field-plate" technology is presented as an improvement over the discrete multiple field plates for high breakdown voltage AlGaN/GaN HEMTs.