Journal ArticleDOI
1.8 mΩ·cm2 vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation
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TLDR
In this paper, a redesigned epitaxial layer structure with a regular hexagonal trench gate layout was proposed to reduce the specific on-resistance to as low as 1.8 mΩcm2 while obtaining a sufficient blocking voltage for 1.2kV-class operation.Abstract:
In this paper, we report on 1.2-kV-class vertical GaN-based trench metal–oxide–semiconductor field-effect transistors (MOSFETs) on a free-standing GaN substrate with a low specific on-resistance. A redesigned epitaxial layer structure following our previous work with a regular hexagonal trench gate layout enables us to reduce the specific on-resistance to as low as 1.8 mΩcm2 while obtaining a sufficient blocking voltage for 1.2-kV-class operation. Normally-off operation with a threshold voltage of 3.5 V is also demonstrated. To the best of our knowledge, this is the first report on vertical GaN-based MOSFETs with a specific on-resistance of less than 2 mΩcm2.read more
Citations
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Vertical GaN Schottky Barrier Diode With Record High Figure of Merit (1.1 GW/cm2) Fully Grown by Hydride Vapor Phase Epitaxy
TL;DR: In this article , a vertical GaN-on-GaN Schottky barrier diode (SBD) with a low turn-on voltage of 0.52 V and a high break-off voltage of 1.1 GW/cm was demonstrated.
Journal ArticleDOI
Possible influence of oxygen segregation on reducing specific surface energies for m-plane sides of nanopipes in GaN
Journal ArticleDOI
Surface kinetics in halide vapor phase epitaxial growth of GaN layers on GaN (0001) freestanding substrates
TL;DR: In this article , a surface kinetic model of halide vapor phase epitaxial (HVPE) growth conditions such as input V/III ratio and substrate off-cut angle on the surface morphology of n-type GaN layers grown on GaN (0001) freestanding substrates were investigated to develop a model for growing smooth surfaces.
Journal ArticleDOI
Possible contribution of the Gibbs−Thomson effect to filling nanopipes in GaN homoepitaxial layers
Proceedings ArticleDOI
Integration of GaN-SiC and GaN-diamond by surface activated bonding methods
Fengwen Mu,Tadatomo Suga +1 more
TL;DR: In this article, both of GaN-SiC integration and GaNdiamond integration have been realized by surface activated bonding methods at room temperature, and the bonding interfaces were investigated to understand the bonding mechanisms.
References
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Journal ArticleDOI
Hole Compensation Mechanism of P-Type GaN Films
TL;DR: In this paper, a hydrogenation process whereby acceptor-H neutral complexes are formed in p-type GaN films was proposed, which causes hole compensation, and deep-level and weak blue emissions in photoluminescence.
Journal ArticleDOI
High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates
TL;DR: In this article, a self-aligned "slant-field-plate" technology is presented as an improvement over the discrete multiple field plates for high breakdown voltage AlGaN/GaN HEMTs.