Journal ArticleDOI
1.8 mΩ·cm2 vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation
TLDR
In this paper, a redesigned epitaxial layer structure with a regular hexagonal trench gate layout was proposed to reduce the specific on-resistance to as low as 1.8 mΩcm2 while obtaining a sufficient blocking voltage for 1.2kV-class operation.Abstract:
In this paper, we report on 1.2-kV-class vertical GaN-based trench metal–oxide–semiconductor field-effect transistors (MOSFETs) on a free-standing GaN substrate with a low specific on-resistance. A redesigned epitaxial layer structure following our previous work with a regular hexagonal trench gate layout enables us to reduce the specific on-resistance to as low as 1.8 mΩcm2 while obtaining a sufficient blocking voltage for 1.2-kV-class operation. Normally-off operation with a threshold voltage of 3.5 V is also demonstrated. To the best of our knowledge, this is the first report on vertical GaN-based MOSFETs with a specific on-resistance of less than 2 mΩcm2.read more
Citations
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Journal ArticleDOI
Improved Dynamic R ON of GaN Vertical Trench MOSFETs (OG-FETs) Using TMAH Wet Etch
Dong Ji,Wenwen Li,Anchal Agarwal,Silvia H. Chan,Jeffrey Haller,Davide Bisi,Michelle Labrecque,Chirag Gupta,Bill Cruse,Rakesh K. Lal,Stacia Keller,Umesh K. Mishra,Srabanti Chowdhury +12 more
TL;DR: This letter reports on the dynamic performance of large-area GaN vertical trench MOSFETs fabricated on bulk GaN substrates, which demonstrated excellent DC performance and damage to the trench sidewalls caused by RIE dry etching led to poor dynamic performance.
Journal ArticleDOI
GaN-Si direct wafer bonding at room temperature for thin GaN device transfer after epitaxial lift off
TL;DR: In this paper, a feasibility study using GaN template has been done and crystal-face dependence of the bonding results for freestanding GaN substrate has been investigated between Ga-face and N-face.
Journal ArticleDOI
Identification of origin of E C -0.6 eV electron trap level by correlation with iron concentration in n-type GaN grown on GaN freestanding substrate by metalorganic vapor phase epitaxy
Proceedings ArticleDOI
100 A Vertical GaN Trench MOSFETs with a Current Distribution Layer
TL;DR: In this paper, a vertical GaN-based trench MOSFET with a current distribution layer (CDL) in a drift layer is employed for the high current operation.
Journal ArticleDOI
Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures
Shigefusa F. Chichibu,Shigefusa F. Chichibu,Shigefusa F. Chichibu,Kohei Shima,Kazunobu Kojima,Shinya Takashima,Katsunori Ueno,Masaharu Edo,Hiroko Iguchi,Tetsuo Narita,Keita Kataoka,Shoji Ishibashi,Akira Uedono +12 more
References
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Journal ArticleDOI
Hole Compensation Mechanism of P-Type GaN Films
TL;DR: In this paper, a hydrogenation process whereby acceptor-H neutral complexes are formed in p-type GaN films was proposed, which causes hole compensation, and deep-level and weak blue emissions in photoluminescence.
Journal ArticleDOI
High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates
TL;DR: In this article, a self-aligned "slant-field-plate" technology is presented as an improvement over the discrete multiple field plates for high breakdown voltage AlGaN/GaN HEMTs.