Journal ArticleDOI
1.8 mΩ·cm2 vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation
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TLDR
In this paper, a redesigned epitaxial layer structure with a regular hexagonal trench gate layout was proposed to reduce the specific on-resistance to as low as 1.8 mΩcm2 while obtaining a sufficient blocking voltage for 1.2kV-class operation.Abstract:
In this paper, we report on 1.2-kV-class vertical GaN-based trench metal–oxide–semiconductor field-effect transistors (MOSFETs) on a free-standing GaN substrate with a low specific on-resistance. A redesigned epitaxial layer structure following our previous work with a regular hexagonal trench gate layout enables us to reduce the specific on-resistance to as low as 1.8 mΩcm2 while obtaining a sufficient blocking voltage for 1.2-kV-class operation. Normally-off operation with a threshold voltage of 3.5 V is also demonstrated. To the best of our knowledge, this is the first report on vertical GaN-based MOSFETs with a specific on-resistance of less than 2 mΩcm2.read more
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Journal ArticleDOI
Smart-cut-like laser slicing of GaN substrate using its own nitrogen
Atsushi Tanaka,Atsushi Tanaka,Ryuji Sugiura,Daisuke Kawaguchi,Toshiki Yui,Yotaro Wani,Tomomi Aratani,Hirotaka Watanabe,Hadi Sena,Yoshio Honda,Yasunori Igasaki,Hiroshi Amano,Hiroshi Amano +12 more
TL;DR: In this article, a sub-nanosecond laser with a wavelength of 532nm was used to slice GaN substrates and a standard high quality homoepitaxial layer can be grown on the sliced surface after removing the damaged layer by polishing.
Journal ArticleDOI
Effects of the stepped sidewall morphology on the ON-state performance for vertical GaN trench-gate MOSFETs
Wenxin Tang,Jiaan Zhou,Guohao Yu,Xing Wei,Wenbo Tang,Li Bin Zhang,Weining Liu,Tiwei Chen,Zicheng Yu,Heng Wang,Xiaodong Zhang,Wenkui Lin,Zengli Huang,Rong-Tan Huang,Yong Cai,Baoshun Zhang +15 more
TL;DR: In this paper , a step-slotted MOSFET with ∼130 nm stepped sidewalls in the p-GaN channel layer is studied and two significant influences have been observed compared to the devices with smooth sidewalls.
Journal ArticleDOI
Low etching damage surface obtained by a mixed etching method and the influence of surface states on the C–V characteristics of AlGaN/GaN Schottky barrier diodes
Chuan Cheng,Yuan Ren,Chengguo Li,Bin Dong,Changan Wang,Xihui Liang,Ningyang Liu,Zhitao Chen,Shuti Li +8 more
TL;DR: In this paper , a mixed etching method including ICP dry etching and digital etching (plasma oxidation and wet etching) to remove the p-GaN capping layer was investigated.
Journal ArticleDOI
Growth of GaN on a three-dimensional SCAATTM bulk seed by tri-halide vapor phase epitaxy using GaCl3
TL;DR: In this paper, a GaN with a film thickness of 200-600 μm was grown on the as-grown three-dimensional supercritical acidic ammonia technology (SCAATTM) bulk seed that comprised only semipolar planes at a temperature as high as 1390 °C by tri-halide vapor phase epitaxy.
Proceedings ArticleDOI
Novel vertical GaN power devices using PEALD-AlN/GaN heterostructure
TL;DR: In this article, a vertical GaN trench structure using PEALD-AlN/GaN hetero-structure for the first time was reported. And the authors showed that the vertical 2DEG channel with high electron density and mobility can be achieved by depositing AlN layer after trench etch of N-high resistive-N GaN epilayer in the novel structure.
References
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Journal ArticleDOI
Hole Compensation Mechanism of P-Type GaN Films
TL;DR: In this paper, a hydrogenation process whereby acceptor-H neutral complexes are formed in p-type GaN films was proposed, which causes hole compensation, and deep-level and weak blue emissions in photoluminescence.
Journal ArticleDOI
High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates
TL;DR: In this article, a self-aligned "slant-field-plate" technology is presented as an improvement over the discrete multiple field plates for high breakdown voltage AlGaN/GaN HEMTs.