Journal ArticleDOI
1.8 mΩ·cm2 vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation
TLDR
In this paper, a redesigned epitaxial layer structure with a regular hexagonal trench gate layout was proposed to reduce the specific on-resistance to as low as 1.8 mΩcm2 while obtaining a sufficient blocking voltage for 1.2kV-class operation.Abstract:
In this paper, we report on 1.2-kV-class vertical GaN-based trench metal–oxide–semiconductor field-effect transistors (MOSFETs) on a free-standing GaN substrate with a low specific on-resistance. A redesigned epitaxial layer structure following our previous work with a regular hexagonal trench gate layout enables us to reduce the specific on-resistance to as low as 1.8 mΩcm2 while obtaining a sufficient blocking voltage for 1.2-kV-class operation. Normally-off operation with a threshold voltage of 3.5 V is also demonstrated. To the best of our knowledge, this is the first report on vertical GaN-based MOSFETs with a specific on-resistance of less than 2 mΩcm2.read more
Citations
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Journal ArticleDOI
Formation of highly vertical trenches with rounded corners via inductively coupled plasma reactive ion etching for vertical GaN power devices
Shinji Yamada,Hideki Sakurai,Yamato Osada,Kanji Furuta,Toshiyuki Nakamura,Ryuichiro Kamimura,Tetsuo Narita,Jun Suda,Tetsu Kachi +8 more
TL;DR: In this paper, the authors developed a dry-etching technique using inductively coupled plasma reactive ion etching (ICP-RIE), where Si-related byproducts suppressed the etching of the sidewall and allowed selective etching in the vertical direction.
Journal ArticleDOI
Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth
H. Qian,K. B. Lee,S. Hosseini Vajargah,Sergei V. Novikov,Ivor Guiney,Z H Zaidi,Sheng Jiang,David J. Wallis,C. T. Foxon,Colin J. Humphreys,Peter A. Houston +10 more
TL;DR: In this paper, a V-groove vertical heterostructure field effect transistor (HFET) structure was proposed using semi-polar (11-22) GaN and a potassium hydroxide self-limiting wet etching technique.
Book ChapterDOI
GaN-on-GaN power device design and fabrication
TL;DR: In this paper, the authors describe the design and characterization of GaN-on-GaN power electronic devices from their design to fabrication and characterization, showing that high efficiency operation at higher operating frequency reduces the size, weight and cost of the overall system by reducing the size of the passive components and the heat sink.
Journal ArticleDOI
Impact of Trench Dimensions on the Device Performance of GaN Vertical Trench MOSFETs
Chirag Gupta,Dong Ji,Silvia H. Chan,Anchal Agarwal,William Leach,Stacia Keller,Srabanti Chowdhury,Umesh K. Mishra +7 more
TL;DR: In this paper, the impact of trench dimensions on the breakdown voltage and ON-resistance of trench MOSFETs fabricated on sapphire and bulk GaN substrates was examined.
Journal ArticleDOI
Self-termination of contactless photo-electrochemical (PEC) etching on aluminum gallium nitride/gallium nitride heterostructures
Kazuki Miwa,Yuto Komatsu,Masachika Toguchi,Fumimasa Horikiri,Noboru Fukuhara,Yoshinobu Narita,Osamu Ichikawa,Ryota Isono,Takeshi Tanaka,Taketomo Sato +9 more
References
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Journal ArticleDOI
Hole Compensation Mechanism of P-Type GaN Films
TL;DR: In this paper, a hydrogenation process whereby acceptor-H neutral complexes are formed in p-type GaN films was proposed, which causes hole compensation, and deep-level and weak blue emissions in photoluminescence.
Journal ArticleDOI
High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates
TL;DR: In this article, a self-aligned "slant-field-plate" technology is presented as an improvement over the discrete multiple field plates for high breakdown voltage AlGaN/GaN HEMTs.