Journal ArticleDOI
1.8 mΩ·cm2 vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation
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TLDR
In this paper, a redesigned epitaxial layer structure with a regular hexagonal trench gate layout was proposed to reduce the specific on-resistance to as low as 1.8 mΩcm2 while obtaining a sufficient blocking voltage for 1.2kV-class operation.Abstract:
In this paper, we report on 1.2-kV-class vertical GaN-based trench metal–oxide–semiconductor field-effect transistors (MOSFETs) on a free-standing GaN substrate with a low specific on-resistance. A redesigned epitaxial layer structure following our previous work with a regular hexagonal trench gate layout enables us to reduce the specific on-resistance to as low as 1.8 mΩcm2 while obtaining a sufficient blocking voltage for 1.2-kV-class operation. Normally-off operation with a threshold voltage of 3.5 V is also demonstrated. To the best of our knowledge, this is the first report on vertical GaN-based MOSFETs with a specific on-resistance of less than 2 mΩcm2.read more
Citations
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Journal ArticleDOI
Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges
Jeffrey Y. Tsao,Srabanti Chowdhury,Mark A. Hollis,Debdeep Jena,N. M. Johnson,Kenneth A. Jones,Robert Kaplar,Siddharth Rajan,C. G. Van de Walle,Enrico Bellotti,C. L. Chua,Ramon Collazo,Michael E. Coltrin,J. A. Cooper,Keith R. Evans,Samuel Graham,Timothy A. Grotjohn,Eric R. Heller,Masataka Higashiwaki,M. S. Islam,P. W. Juodawlkis,Muhammad Asif Khan,Andrew D. Koehler,Jacob H. Leach,Umesh K. Mishra,Robert J. Nemanich,Robert C. N. Pilawa-Podgurski,Jeffrey B. Shealy,Zlatko Sitar,Marko J. Tadjer,Arthur F. Witulski,Michael Wraback,Jerry A. Simmons +32 more
TL;DR: The UWBG semiconductor materials, such as high Al‐content AlGaN, diamond and Ga2O3, advanced in maturity to the point where realizing some of their tantalizing advantages is a relatively near‐term possibility.
Journal ArticleDOI
High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates
TL;DR: In this article, a GaN vertical fin power field effect transistor structure with submicron fin-shaped channels on bulk GaN substrates was reported, and a combined dry/wet etch was used to get smooth fin vertical sidewalls.
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Gallium nitride vertical power devices on foreign substrates: a review and outlook
Journal ArticleDOI
Insulated gate and surface passivation structures for GaN-based power transistors
TL;DR: In this paper, the authors describe critical issues and problems including leakage current, current collapse and threshold voltage instability in high-electron-mobility transistors (HEMTs) using oxides, nitrides and high-κ dielectrics.
Journal ArticleDOI
GaN-based power devices: Physics, reliability, and perspectives
Matteo Meneghini,Carlo De Santi,Idriss Abid,Matteo Buffolo,Marcello Cioni,Riyaz Abdul Khadar,Luca Nela,Nicolo Zagni,Alessandro Chini,Farid Medjdoub,Gaudenzio Meneghesso,Giovanni Verzellesi,Enrico Zanoni,Elison Matioli +13 more
TL;DR: In this article, the authors describe the physics, technology, and reliability of GaN-based power devices, starting from a discussion of the main properties of the material, the characteristics of lateral and vertical GaN transistors are discussed in detail to provide guidance in this complex and interesting field.
References
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Journal ArticleDOI
1.5-kV and 2.2-m \(\Omega \) -cm \(^{2}\) Vertical GaN Transistors on Bulk-GaN Substrates
Hui Nie,Quentin Diduck,Brian Joel Alvarez,Andrew P. Edwards,Brendan M. Kayes,Ming Zhang,Gangfeng Ye,Thomas Prunty,Dave Bour,Isik C. Kizilyalli +9 more
TL;DR: In this paper, vertical GaN transistors fabricated on bulk GaN substrates are discussed and a threshold voltage of 0.5 V and saturation current > 2.3 A are demonstrated.
Journal ArticleDOI
GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching
Masahito Kodama,Masahiro Sugimoto,Eiko Hayashi,Narumasa Soejima,Osamu Ishiguro,Masakazu Kanechika,Kenji Itoh,Hiroyuki Ueda,Tsutomu Uesugi,Tetsu Kachi +9 more
TL;DR: In this article, a novel method for fabricating trench structures on GaN was developed and a smooth non-polar (1100) plane was obtained by wet etching using tetramethylammonium hydroxide (TMAH) as the etchant.
Proceedings ArticleDOI
High performance SiC trench devices with ultra-low ron
Takashi Nakamura,Yuki Nakano,Masatoshi Aketa,Ryota Nakamura,Shuhei Mitani,H. Sakairi,Y. Yokotsuji +6 more
TL;DR: In this article, the authors have developed SiC trench structure Schottky diodes and SiC double-trench MOSFETs to improve device performance by reducing the electric field through the introduction of the aforementioned trench structures.
Journal ArticleDOI
Vertical GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistors on GaN Bulk Substrates
TL;DR: In this paper, complete vertical trench gate metal oxide semiconductor field effect transistors (MOSFETs) have been produced using gallium nitride (GaN) for the first time.
Journal ArticleDOI
The 1.6-kV AlGaN/GaN HFETs
TL;DR: In this paper, the breakdown voltages in unpassivated non-field-plated AlGaN/GaN HFETs on sapphire substrates were studied.