Journal ArticleDOI
1.8 mΩ·cm2 vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation
Reads0
Chats0
TLDR
In this paper, a redesigned epitaxial layer structure with a regular hexagonal trench gate layout was proposed to reduce the specific on-resistance to as low as 1.8 mΩcm2 while obtaining a sufficient blocking voltage for 1.2kV-class operation.Abstract:
In this paper, we report on 1.2-kV-class vertical GaN-based trench metal–oxide–semiconductor field-effect transistors (MOSFETs) on a free-standing GaN substrate with a low specific on-resistance. A redesigned epitaxial layer structure following our previous work with a regular hexagonal trench gate layout enables us to reduce the specific on-resistance to as low as 1.8 mΩcm2 while obtaining a sufficient blocking voltage for 1.2-kV-class operation. Normally-off operation with a threshold voltage of 3.5 V is also demonstrated. To the best of our knowledge, this is the first report on vertical GaN-based MOSFETs with a specific on-resistance of less than 2 mΩcm2.read more
Citations
More filters
Journal ArticleDOI
Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges
Jeffrey Y. Tsao,Srabanti Chowdhury,Mark A. Hollis,Debdeep Jena,N. M. Johnson,Kenneth A. Jones,Robert Kaplar,Siddharth Rajan,C. G. Van de Walle,Enrico Bellotti,C. L. Chua,Ramon Collazo,Michael E. Coltrin,J. A. Cooper,Keith R. Evans,Samuel Graham,Timothy A. Grotjohn,Eric R. Heller,Masataka Higashiwaki,M. S. Islam,P. W. Juodawlkis,Muhammad Asif Khan,Andrew D. Koehler,Jacob H. Leach,Umesh K. Mishra,Robert J. Nemanich,Robert C. N. Pilawa-Podgurski,Jeffrey B. Shealy,Zlatko Sitar,Marko J. Tadjer,Arthur F. Witulski,Michael Wraback,Jerry A. Simmons +32 more
TL;DR: The UWBG semiconductor materials, such as high Al‐content AlGaN, diamond and Ga2O3, advanced in maturity to the point where realizing some of their tantalizing advantages is a relatively near‐term possibility.
Journal ArticleDOI
High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates
TL;DR: In this article, a GaN vertical fin power field effect transistor structure with submicron fin-shaped channels on bulk GaN substrates was reported, and a combined dry/wet etch was used to get smooth fin vertical sidewalls.
Journal ArticleDOI
Gallium nitride vertical power devices on foreign substrates: a review and outlook
Journal ArticleDOI
Insulated gate and surface passivation structures for GaN-based power transistors
TL;DR: In this paper, the authors describe critical issues and problems including leakage current, current collapse and threshold voltage instability in high-electron-mobility transistors (HEMTs) using oxides, nitrides and high-κ dielectrics.
Journal ArticleDOI
GaN-based power devices: Physics, reliability, and perspectives
Matteo Meneghini,Carlo De Santi,Idriss Abid,Matteo Buffolo,Marcello Cioni,Riyaz Abdul Khadar,Luca Nela,Nicolo Zagni,Alessandro Chini,Farid Medjdoub,Gaudenzio Meneghesso,Giovanni Verzellesi,Enrico Zanoni,Elison Matioli +13 more
TL;DR: In this article, the authors describe the physics, technology, and reliability of GaN-based power devices, starting from a discussion of the main properties of the material, the characteristics of lateral and vertical GaN transistors are discussed in detail to provide guidance in this complex and interesting field.
References
More filters
Proceedings ArticleDOI
8300V Blocking Voltage AlGaN/GaN Power HFET with Thick Poly-AlN Passivation
Yasuhiro Uemoto,Daisuke Shibata,Manabu Yanagihara,Hidetoshi Ishida,Hisayoshi Matsuo,Shuichi Nagai,N. Batta,Ming Li,T. Ueda,Tsuyoshi Tanaka,Daisuke Ueda +10 more
TL;DR: In this article, the authors reported ultra high voltage AlGaN/GaN heterojunction transistors (HFETs) on sapphire with thick poly-AlN passivation.
Proceedings ArticleDOI
Normally-off high-voltage p-GaN gate GaN HFET with carbon-doped buffer
TL;DR: In this article, a combination of an AlGaN back-barrier with the carbon-doped buffer prevents early off-state punch-through of normally-off GaN transistors.
Journal ArticleDOI
GaN-Based Trench Gate Metal Oxide Semiconductor Field Effect Transistors with Over 100 cm2/(V s) Channel Mobility
TL;DR: In this article, an enhancement-mode metal oxide semiconductor field effect transistors (MOSFETs) with trench gate structures have been developed for vertical switching devices with high breakdown voltage and highly integrated low on-resistance with the usage of excellent physical parameters of GaN.
Proceedings ArticleDOI
1.6kV, 2.9 mΩ cm 2 normally-off p-GaN HEMT device
In-jun Hwang,Hyoji Choi,Jaewon Lee,Hyuk Soon Choi,Jongseob Kim,Jong-Bong Ha,Chang-Yong Um,Sun-Kyu Hwang,Jae-joon Oh,Jun-Youn Kim,Jai-Kwang Shin,Youngsoo Park,U-In Chung,In-Kyeong Yoo,Kinam Kim +14 more
TL;DR: In this paper, a p-GaN/AlGaN and GaN/GaN based normally-off HEMT device has been demonstrated on a Si substrate and the calculated figure of merit is 921 MV2/Ωcm2, which is the highest value reported for the GaN E-mode devices.
Proceedings ArticleDOI
Blocking-voltage boosting technology for GaN transistors by widening depletion layer in Si substrates
Hidekazu Umeda,Asamira Suzuki,Yoshiharu Anda,Masahiro Ishida,Tetsuzo Ueda,Tsuyoshi Tanaka,Daisuke Ueda +6 more
TL;DR: A novel technique to boost the blocking voltage of AlGaN/GaN hetero junction field effect transistors (HFETs) by widening a depletion layer in highly resistive Si substrate, which leads to further reduction of the fabrication cost.