Journal ArticleDOI
1.8 mΩ·cm2 vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation
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TLDR
In this paper, a redesigned epitaxial layer structure with a regular hexagonal trench gate layout was proposed to reduce the specific on-resistance to as low as 1.8 mΩcm2 while obtaining a sufficient blocking voltage for 1.2kV-class operation.Abstract:
In this paper, we report on 1.2-kV-class vertical GaN-based trench metal–oxide–semiconductor field-effect transistors (MOSFETs) on a free-standing GaN substrate with a low specific on-resistance. A redesigned epitaxial layer structure following our previous work with a regular hexagonal trench gate layout enables us to reduce the specific on-resistance to as low as 1.8 mΩcm2 while obtaining a sufficient blocking voltage for 1.2-kV-class operation. Normally-off operation with a threshold voltage of 3.5 V is also demonstrated. To the best of our knowledge, this is the first report on vertical GaN-based MOSFETs with a specific on-resistance of less than 2 mΩcm2.read more
Citations
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Journal ArticleDOI
Enhancing ON- and OFF-State Performance of Quasi-Vertical GaN Trench MOSFETs on Sapphire With Reduced Interface Charges and a Thick Bottom Dielectric
TL;DR: In this paper , the authors report the enhancement of ON-and OFF-state performance in vertical GaN trench MOSFETs through fabrication process optimization and show that on-state device performance was effectively improved by reducing MOS channel interface charges with a piranha cleaning process prior to the gate dielectric deposition.
Journal ArticleDOI
Comparison of AlN Encapsulants for Bulk GaN Multicycle Rapid Thermal Annealing
Jordan D. Greenlee,Travis J. Anderson,Boris N. Feigelson,Virginia D. Wheeler,Karl D. Hobart,Francis J. Kub +5 more
TL;DR: Sputtered AlN capping layers deposited at different temperatures were compared for their efficacy in protecting bulk GaN substrates during high temperature annealing as mentioned in this paper, and the results showed that AlN caps sputtered on the rougher optically-polished surface did not crack due to strain relief that results from polishing damage.
Journal ArticleDOI
Modeling and Characterization of Vertical GaN Schottky Diodes With AlGaN Cap Layers
TL;DR: In this paper, a gallium nitride (GaN) Schottky diode with an ultrathin AlGaN cap layer was fabricated using an Ni/Au metal stack as the Schotty electrode.
Journal ArticleDOI
Vertical 3D gallium nitride field-effect transistors based on fin structures with inverted p-doped channel
Klaas Strempel,Friedhard Römer,Feng Yu,Matteo Meneghini,Andrey Bakin,Hergo-Heinrich Wehmann,Bernd Witzigmann,Andreas Waag +7 more
Proceedings ArticleDOI
Switching performance analysis of GaN OG-FET using TCAD device-circuit-integrated model
TL;DR: In this article, the authors presented the superior switching performance of the in-situ Oxide-GaN interlayer FET obtained by modeling a 1.4 kV/2.2 mΩ□cm2 device fabricated by the authors.
References
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Journal ArticleDOI
Hole Compensation Mechanism of P-Type GaN Films
TL;DR: In this paper, a hydrogenation process whereby acceptor-H neutral complexes are formed in p-type GaN films was proposed, which causes hole compensation, and deep-level and weak blue emissions in photoluminescence.
Journal ArticleDOI
High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates
TL;DR: In this article, a self-aligned "slant-field-plate" technology is presented as an improvement over the discrete multiple field plates for high breakdown voltage AlGaN/GaN HEMTs.