Journal ArticleDOI
1.8 mΩ·cm2 vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation
TLDR
In this paper, a redesigned epitaxial layer structure with a regular hexagonal trench gate layout was proposed to reduce the specific on-resistance to as low as 1.8 mΩcm2 while obtaining a sufficient blocking voltage for 1.2kV-class operation.Abstract:
In this paper, we report on 1.2-kV-class vertical GaN-based trench metal–oxide–semiconductor field-effect transistors (MOSFETs) on a free-standing GaN substrate with a low specific on-resistance. A redesigned epitaxial layer structure following our previous work with a regular hexagonal trench gate layout enables us to reduce the specific on-resistance to as low as 1.8 mΩcm2 while obtaining a sufficient blocking voltage for 1.2-kV-class operation. Normally-off operation with a threshold voltage of 3.5 V is also demonstrated. To the best of our knowledge, this is the first report on vertical GaN-based MOSFETs with a specific on-resistance of less than 2 mΩcm2.read more
Citations
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Journal ArticleDOI
Over 12000 A/cm 2 and 3.2 m $\Omega$ cm 2 Miniaturized Vertical-Type Two-Dimensional Hole Gas Diamond MOSFET
Masayuki Iwataki,Nobutaka Oi,Kiyotaka Horikawa,Shotaro Amano,Jun Nishimura,Taisuke Kageura,Masafumi Inaba,Atsushi Hiraiwa,Hiroshi Kawarada +8 more
TL;DR: In this article, a gate-source overlapping structure was proposed to eliminate the space between the source and gate electrode to reduce the drain current on/off ratio of 2DHG MOSFETs.
Journal ArticleDOI
Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces
Yuto Ando,Kentaro Nagamatsu,Manato Deki,Noriyuki Taoka,Atsushi Tanaka,Atsushi Tanaka,Shugo Nitta,Yoshio Honda,Tohru Nakamura,Tohru Nakamura,Hiroshi Amano +10 more
TL;DR: In this article, Ni/Al2O3/GaN structures with vicinal GaN surfaces from the c- or m-plane were formed, and electrical interface properties of the structures were systematically investigated.
Journal ArticleDOI
Roughening of GaN homoepitaxial surfaces due to step meandering and bunching instabilities and their suppression in hydride vapor phase epitaxy
Hajime Fujikura,Taichiro Konno +1 more
TL;DR: In this paper, the authors show that in-phase step meandering and step bunching are the main causes of surface roughening of GaN homoepitaxial layers on vicinal +c-oriented GaN substrates.
Journal ArticleDOI
Electrical properties of Ni/n-GaN Schottky diodes on freestanding m-plane GaN substrates
TL;DR: In this paper, the electrical properties of m-plane Ni/n-GaN Schottky diodes grown via metalorganic chemical vapor deposition were investigated under growth at 1,120 °C with a V/III ratio of 1,000 (growth rate of 100 nm/min), the residual Si, O, and C impurity concentrations in the mplane GaN layer were below the secondary ion mass spectroscopy detection limit.
Journal ArticleDOI
A Study on the Impact of Channel Mobility on Switching Performance of Vertical GaN MOSFETs
TL;DR: In this paper, a comparison of switching performances between the in-situ oxide, gallium nitride (GaN) interlayer FET and the conventional GaN metaloxide-semiconductor FET (MOSFET) is presented, and the influence of the channel electron mobility on the device switching performance is explored.
References
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Journal ArticleDOI
Hole Compensation Mechanism of P-Type GaN Films
TL;DR: In this paper, a hydrogenation process whereby acceptor-H neutral complexes are formed in p-type GaN films was proposed, which causes hole compensation, and deep-level and weak blue emissions in photoluminescence.
Journal ArticleDOI
High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates
TL;DR: In this article, a self-aligned "slant-field-plate" technology is presented as an improvement over the discrete multiple field plates for high breakdown voltage AlGaN/GaN HEMTs.