Journal ArticleDOI
1.8 mΩ·cm2 vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation
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TLDR
In this paper, a redesigned epitaxial layer structure with a regular hexagonal trench gate layout was proposed to reduce the specific on-resistance to as low as 1.8 mΩcm2 while obtaining a sufficient blocking voltage for 1.2kV-class operation.Abstract:
In this paper, we report on 1.2-kV-class vertical GaN-based trench metal–oxide–semiconductor field-effect transistors (MOSFETs) on a free-standing GaN substrate with a low specific on-resistance. A redesigned epitaxial layer structure following our previous work with a regular hexagonal trench gate layout enables us to reduce the specific on-resistance to as low as 1.8 mΩcm2 while obtaining a sufficient blocking voltage for 1.2-kV-class operation. Normally-off operation with a threshold voltage of 3.5 V is also demonstrated. To the best of our knowledge, this is the first report on vertical GaN-based MOSFETs with a specific on-resistance of less than 2 mΩcm2.read more
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Journal ArticleDOI
Electrical characteristics of N-polar (000\bar{1}) p-type GaN Schottky contacts
TL;DR: In this paper, the electrical characteristics of Ni/N-polar p-GaN Schottky contacts were investigated in comparison with those of Ga polar contacts, and it was suggested that the topmost N atomic layer can suppress the Ga out-diffusion.
Journal ArticleDOI
Modeling dislocation-related reverse bias leakage in GaN p-n diodes
Proceedings ArticleDOI
Improved on-resistance and breakdown voltage vertical GaN-based field effect transistors
TL;DR: In this article, a GaN-based VFET with AlGaN barrier layer and slanted gate structures is proposed and demonstrated by TCAD simulations, and the concentration of the key p-GaN blocking layer is optimized.
Journal ArticleDOI
Vertical Schottky Contacts to Bulk GaN Single Crystals and Current Transport Mechanisms: A Review
TL;DR: In this article, the Schottky metal contacts to bulk GaN are described, and their electrical characterization is discussed in terms of the barrier formation and current transport mechanisms, namely: (1) Schottkys barrier inhomogeneity, (2)Schottky barrier modulation by an ultrathin interlayer, (3) leakage current transport, (4) dislocation-related current transport and (5) deep level defects.
Proceedings ArticleDOI
Recent topics of vertical GaN power devices
TL;DR: In this paper, the authors presented a recent topic of vertical GaN power devices fabricated on GaN substrates with particular emphasis on SBDs and trench MOSFETs.
References
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Journal ArticleDOI
Hole Compensation Mechanism of P-Type GaN Films
TL;DR: In this paper, a hydrogenation process whereby acceptor-H neutral complexes are formed in p-type GaN films was proposed, which causes hole compensation, and deep-level and weak blue emissions in photoluminescence.
Journal ArticleDOI
High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates
TL;DR: In this article, a self-aligned "slant-field-plate" technology is presented as an improvement over the discrete multiple field plates for high breakdown voltage AlGaN/GaN HEMTs.