Journal ArticleDOI
A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits
Ya-Qing Bie,Gabriele Grosso,Mikkel Heuck,Marco M. Furchi,Yuan Cao,Jiabao Zheng,Jiabao Zheng,Darius Bunandar,Efrén Navarro-Moratalla,Lin Zhou,Dmitri K. Efetov,Dmitri K. Efetov,Takashi Taniguchi,Kenji Watanabe,Jing Kong,Dirk Englund,Pablo Jarillo-Herrero +16 more
TLDR
In this paper, a waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe2, a two-dimensional transition-metal dichalcogenides (TMD) with an infrared bandgap is presented.Abstract:
One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe2, a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.read more
Citations
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Journal ArticleDOI
Nonlinear Optics with 2D Layered Materials.
TL;DR: The current state of the art in the field of nonlinear optics based on 2DLMs and their hybrid structures (e.g., mixed-dimensional heterostructures, plasmonic structures, and silicon/fiber integrated structures) is reviewed and several potential perspectives and possible future research directions of these promising nanomaterials for non linear optics are presented.
Journal ArticleDOI
2D library beyond graphene and transition metal dichalcogenides: a focus on photodetection
Feng Wang,Zhenxing Wang,Lei Yin,Lei Yin,Ruiqing Cheng,Ruiqing Cheng,Junjun Wang,Junjun Wang,Yao Wen,Yao Wen,Tofik Ahmed Shifa,Tofik Ahmed Shifa,Fengmei Wang,Yu Zhang,Xueying Zhan,Jun He,Jun He +16 more
TL;DR: A comprehensive review on the state-of-the-art photodetections of two-dimensional materials beyond graphene and TMDs is given and the current research status of this area is concluded.
Journal ArticleDOI
Recent Progress and Future Prospects of 2D-Based Photodetectors
TL;DR: In this paper, the authors proposed a 2D photodetectors based on 2D hybrid systems combined with other material platforms such as quantum dots, perovskites, organic materials, or plasmonic nanostructures for high performance, low-cost, broadband sensing and imaging modalities.
Journal ArticleDOI
High-performance, multifunctional devices based on asymmetric van der Waals heterostructures
Ruiqing Cheng,Ruiqing Cheng,Feng Wang,Lei Yin,Lei Yin,Zhenxing Wang,Yao Wen,Yao Wen,Tofik Ahmed Shifa,Tofik Ahmed Shifa,Jun He,Jun He +11 more
TL;DR: In this article, an asymmetric van der Waals heterostructure device, which is composed of graphene, hexagonal boron nitride, molybdenum disulfide and molymdenum ditelluride, can function as a high-performance diode, transistor, photodetector and programmable rectifier.
Journal ArticleDOI
Strain-engineered high-responsivity MoTe2 photodetector for silicon photonic integrated circuits
Rishi Maiti,Chandraman Patil,M. A. S. R. Saadi,Ti Xie,J. G. Azadani,Berkin Uluutku,Rubab Amin,A. F. Briggs,Mario Miscuglio,D. Van Thourhout,Santiago D. Solares,Tony Low,Ritesh Agarwal,Seth R. Bank,Volker J. Sorger +14 more
TL;DR: In this article, a strain-induced absorption-enhanced MoTe2-based silicon photonic microring-integrated photodetector is demonstrated, featuring high responsivity of ~0.5
References
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Journal ArticleDOI
Device Requirements for Optical Interconnects to Silicon Chips
TL;DR: The current performance and future demands of interconnects to and on silicon chips are examined and the requirements for optoelectronic and optical devices are project if optics is to solve the major problems of interConnects for future high-performance silicon chips.