Journal ArticleDOI
Compatibility of zinc oxide with silicon IC processing
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TLDR
In this paper, the passivation of zinc oxide by a thin silicon nitride layer is presented, which can be further processed without contamination of the process chambers of subsequent processes, and without damaging the zinc oxide layer.Abstract:
In this paper we present the passivation of zinc oxide by a thin silicon nitride layer. With this passivation, silicon wafers covered with zinc oxide can be further processed without contamination of the process chambers of the subsequent processes, and without damaging the zinc oxide layer. In addition, we review some process technology concerning zinc oxide: the cleaning and etching of zinc oxide and the etching of aluminium on zinc oxide.read more
Citations
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Journal ArticleDOI
Zinc oxide particles: Synthesis, properties and applications
TL;DR: A contemporary review and analysis of the manufacture of ZnO, and its properties, applications, and future prospects can be found in this paper, where the authors provide a survey of the processes used to produce the oxide.
Journal ArticleDOI
Piezoelectric MEMS sensors: state-of-the-art and perspectives
Srinivas Tadigadapa,Kiron Mateti +1 more
TL;DR: A comprehensive review of micromachined piezoelectric transducers can be found in this paper, where the authors present a critical assessment of the future trends and promise of this technology.
Journal ArticleDOI
Remote opto-chemical sensing with extreme sensitivity: design, fabrication and performance of a pigtailed integrated optical phase-modulated Mach-Zehnder interferometer system
Rene Heideman,Paul Lambeck +1 more
TL;DR: In this article, a pigtailed integrated optical (IO) phase-modulated Mach-Zehnder interferometer (MZI) including both the optical chip and the electronics is presented.
Journal ArticleDOI
Electrical Characterization of 1.8 MeV Proton-Bombarded ZnO
TL;DR: In this article, the electrical properties of single-crystal ZnO and Au Schottky contacts formed thereon before and after bombarding them with 1.8 MeV protons were investigated.
Journal ArticleDOI
Micro resonant force gauges
TL;DR: A review of micro resonant force gauges is presented in this article, where a theoretical description is given of gauges operating in a flexural mode of vibration, including a discussion of non-linear effects.
References
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Journal ArticleDOI
Studies of the optimum conditions for growth of rf‐sputtered ZnO films
TL;DR: In this paper, a technique for deposition of highly oriented rf−sputtered zinc oxide films on (111) gold, ( 111) silicon, (0001) sapphire, and fused quartz is described.
Proceedings ArticleDOI
A Monolithic SAW Physical-Electronic System for Sensors
TL;DR: In this article, a dual delay-line oscillator configuration is presented, consisting of two Automatic Gain Controlled (AGC) amplifiers and a mixer, located between the two identical ZnO-Si0 -Si layered delay lines.
Proceedings ArticleDOI
Polyimide as an acoustic absorber for high frequency SAW applications
TL;DR: In this paper, a novel method is described for damping unwanted acoustic energy in high-frequency SAW (surface acoustic wave) devices through the use of a polyimide layer which is patternable with high resolution on the surface of the device.
Journal ArticleDOI
Behavior of SiNx films as masks for Zn diffusion
TL;DR: In this article, the detailed behavior of SiNx films as masks for Zn diffusion into GaAs at both low and high temperatures has been investigated, and it is found that the film behavior as a mask is a function of the refractive index of the Si Nx mask film and that a film with index n=2.06 shows optimum performance at both 650 and 950°C.
Proceedings ArticleDOI
An integrated SAW voltage sensor
TL;DR: In this article, an integrated SAW (surface acoustic wave) voltage sensor is presented, based on the SAW oscillator system, with features such as high sensitivity, broad measuring range, high input impedance, and direct voltage-to-frequency conversion.