Journal ArticleDOI
Conduction mechanisms in thin-film accumulation-mode SOI p-channel MOSFETs
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In this article, a model developed to explain conduction mechanisms in thin-film accumulation-mode SOI p-channel MOSFETs is discussed, and the model is used to calculate drain current as a function of front and back-gate bias as well as output characteristics.Abstract:
A model developed to explain conduction mechanisms in thin-film accumulation-mode SOI p-channel MOSFETs is discussed. It is found that, unlike that which occurs in thin-film fully depleted n-channel devices, there is little or no coupling between the front and back gates, unless the surface-state density is so high that the film remains depleted even when an accumulation channel is formed. The apparent front threshold shift is explained by back-gate modulation of a body current, flowing from the source to the drain. Indeed, the body of the device presents a p/sup +/-p/sup -/-p/sup +/ structure whose conductivity is controlled by the depth of the depletion zones arising from the top and the bottom of the silicon film. The model is used to calculate drain current as a function of front- and back-gate bias as well as output characteristics. >read more
Citations
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Journal ArticleDOI
Junctionless Multiple-Gate Transistors for Analog Applications
Rodrigo T. Doria,Marcelo Antonio Pavanello,Renan Trevisoli,M.M. De Souza,Chi-Woo Lee,Isabelle Ferain,Nima Dehdashti Akhavan,Ran Yan,Pedram Razavi,Ran Yu,Abhinav Kranti,Jean-Pierre Colinge +11 more
TL;DR: In this article, the analog properties of nMOS junctionless (JL) multigate transistors are compared with those exhibited by inversion-mode (IM) trigate devices of similar dimensions.
Journal ArticleDOI
RF Performance and Small-Signal Parameter Extraction of Junctionless Silicon Nanowire MOSFETs
TL;DR: In this article, the authors presented a radiofrequency (RF) model and extracted model parameters for junctionless silicon nanowire (JLSNW) metal-oxide-semiconductor field effect transistors (MOSFETs) using a 3D device simulator.
Journal ArticleDOI
Simple Analytical Bulk Current Model for Long-Channel Double-Gate Junctionless Transistors
TL;DR: In this article, a bulk current model for long-channel double-gate junctionless (DGJL) transistors was formulated using a depletion approximation, and an analytical expression was derived from the Poisson equation to find channel potential.
Journal ArticleDOI
Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivation
Junhong Na,Min-Kyu Joo,Min-Kyu Joo,Minju Shin,Minju Shin,Junghwan Huh,Jae Sung Kim,Mingxing Piao,Jun Eon Jin,Ho Kyun Jang,Hyung Jong Choi,Joon Hyung Shim,Gyu Tae Kim +12 more
TL;DR: Low-frequency noise in mechanically exfoliated multilayer molybdenum disulfide (MoS2) field-effect transistors with back-gate control was characterized with and without an Al2O3 high-k passivation layer, ensuring the existence of the bulk conduction in multilayers MoS2.
Book ChapterDOI
Junctionless Transistors: Physics and Properties
Jean-Pierre Colinge,Christopher W. Lee,N. Dehdashti Akhavan,Ran Yan,Isabelle Ferain,Pedram Razavi,Abhinav Kranti,Ran Yu +7 more
TL;DR: In this paper, the conduction mechanisms in three types of MOS devices: inversion-mode, accumulation-mode and junctionless MOSFETs are compared, and it is shown that junctionless transistors have different conduction properties from those of normal MOSFs.
References
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Journal ArticleDOI
Current-voltage characteristics of thin-film SOI MOSFET's in strong inversion
Hyung-Kyu Lim,Jerry G. Fossum +1 more
TL;DR: In this paper, a simple analytic model for the steady-state currentvoltage characteristics of strongly inverted silicon-on-insulator (SOI) MOSFET's is developed.
Journal ArticleDOI
A charge-based large-signal model for thin-film SOI MOSFET's
Hyung-Kyu Lim,Jerry G. Fossum +1 more
TL;DR: In this article, a charge-based large-signal model for thin-film SOI MOSFETs is proposed for computer simulation of transient characteristics of SOI and 3D circuits emphasizing the structural uniqueness of the devices.
Journal ArticleDOI
CMOS circuits made in thin SIMOX films
TL;DR: In this article, MOS transistors and ring oscillators have been fabricated in thin (100 nm) SIMOX films and no kink effect is observed in the n-channel devices, the inverse subthreshold slope is lower than in bulk devices (70mV/decade against HOmV /decade in bulk), and the dependence of threshold voltage on gate length is much less pronounced than in the bulk.
Journal ArticleDOI
Thin-film, accumulation-mode p-channel SOI MOSFETs
TL;DR: In this article, the electrical characteristics of thin-film (100nm), accumulation-mode SOI p-channel MOSFETs are compared to simulation and very low values of leakage current are obtained.
Journal ArticleDOI
Electrical Characterization of Beam—Recrystallized Soi Structures Using a Depletion Mode Transistor
TL;DR: In this paper, depletion mode transistor is applied to Si thin films recrystallized by a zone-melting technique in which grain-boundaries are localized, which is a very versatile tool for the electrical characterization of SOI structures.