Journal ArticleDOI
Electrical characteristics of high-quality sub-25-/spl Aring/ oxides grown by ultraviolet ozone exposure at low temperature
G.D. Wilk,B. Brar +1 more
TLDR
In this article, a method for growing self-limiting ultrathin oxides with excellent electrical properties in the range /spl sim/10-25 /spl Aring/ thick at temperatures ranging from 25 to 600/spl deg/C, respectively, using an ultraviolet ozone (UVO/sub 3/) oxidation process.Abstract:
We have developed a method for controllably and reproducibly growing self-limiting ultrathin oxides with excellent electrical properties in the range /spl sim/10-25 /spl Aring/ thick at temperatures ranging from 25 to 600/spl deg/C, respectively, using an ultraviolet ozone (UVO/sub 3/) oxidation process. The self-limiting thickness depends primarily on the substrate temperature, allowing ultrathin oxide growth with precision and reproducibility using this UVO/sub 3/ process. Oxides grown by this method are comparable in electrical quality to thermal oxides, with similar leakage current densities and breakdown fields E/sub BD/>10 MV/cm. Current-voltage (I-V) analysis shows oxide thickness uniformity to within 1% from center to edge of a 4-in wafer. Capacitance-voltage (C-V) characterization of /spl sim/25 /spl Aring/ oxides shows excellent saturation behaviour, with low midgap interface trap densities and no hysteresis or dispersion.read more
Citations
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Journal ArticleDOI
High-κ gate dielectrics: Current status and materials properties considerations
TL;DR: In this paper, a review of the literature in the area of alternate gate dielectrics is given, based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success.
Journal ArticleDOI
Hafnium and zirconium silicates for advanced gate dielectrics
TL;DR: In this article, a gate dielectric film with metal contents ranging from ∼3 to 30 at. % Hf and Zr has been investigated, and the results show that Hf exhibits excellent electrical properties and high thermal stability in direct contact with Si, while Al electrodes produce very good electrical properties, but also react with the silicates.
Journal ArticleDOI
Photon-assisted oxidation and oxide thin film synthesis: A review
TL;DR: In this paper, an oxide materials synthesis approach utilizing photons is presented, which enables near-room temperature modification of structure and chemistry of oxide surfaces, interfaces with atomic-level control, and can be controllably tuned using this approach in a self-limiting manner.
Journal ArticleDOI
Electrical properties of thin film zirconia grown by ultraviolet ozone oxidation
TL;DR: In this article, the electrical properties of zirconia films have been studied in detail by capacitance-voltage (C-V) and I-V measurements, and the effect of different underlayers on electrical properties has been discussed.
Journal ArticleDOI
Atomic-layer-deposited Al2O3 thin films with thin SiO2 layers grown by in situ O3 oxidation
Seong Keun Kim,Cheol Seong Hwang +1 more
TL;DR: In this paper, the growth, thermal annealing behaviors, and electrical properties of Al2O3 thin films grown by atomic layer deposition (ALD) on bare (100)Si and various oxidized Si wafers, by in situ O3 oxidation at 400°C and ex- situ RTA under O2 atmosphere at 900°C, were investigated.
References
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Journal ArticleDOI
CMOS scaling into the nanometer regime
Yuan Taur,Douglas A. Buchanan,Wei Chen,David J. Frank,Khalid EzzEldin Ismail,Shih-Hsien Lo,George Anthony Sai-Halasz,R. Viswanathan,Hsing-Jen Wann,Shalom J. Wind,Hon-Sum Philip Wong +10 more
TL;DR: In this article, the key challenges in further scaling of CMOS technology into the nanometer (sub-100 nm) regime in light of fundamental physical effects and practical considerations are discussed, including power supply and threshold voltage, short-channel effect, gate oxide, high-field effects, dopant number fluctuations and interconnect delays.
Journal ArticleDOI
1.5 nm direct-tunneling gate oxide Si MOSFET's
Hiroki Sasaki,Mizuki Ono,Takashi Yoshitomi,Tatsuya Ohguro,S. Nakamura,Masanobu Saito,Hiroshi Iwai +6 more
TL;DR: In this paper, a 1.5 nm direct-tunneling gate oxide was used to achieve a transconductance of more than 1,000 mS/mm at a gate length of 0.09 /spl mu/m at room temperature.
Journal ArticleDOI
Direct extraction of the electron tunneling effective mass in ultrathin SiO2
TL;DR: In this article, an effective mass for the tunneling electron in the SiO2 layer was extracted from the thickness dependence of the direct tunneling current between an applied voltage of 0 and 2 V, a bias range that has not been previously explored.
Journal ArticleDOI
A comparative study of advanced MOSFET concepts
TL;DR: In this article, experimental data, device simulation, and analytical modeling for device comparison are employed. But the comparison is limited to the case of MOSFETs with channel length of 0.1 /spl mu/m and below reported in industrial research.
Journal ArticleDOI
Saturation capacitance of thin oxide MOS structures and the effective surface density of states of silicon
TL;DR: In this article, the capacitance vs voltage curve of thin oxide (30-40 A) MOS structures in strong accumulation was studied in terms of equivalent surface density of state masses, which was found to be 0·2 m 0 for the silicon valence band and 0·06m 0 for conduction band, for both 111 and 100 surfaces.
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