Journal ArticleDOI
Electrical switching of the topological anomalous Hall effect in a non-collinear antiferromagnet above room temperature
Zhiqi Liu,Hua Chen,Hua Chen,J. M. Wang,J. H. Liu,K. Wang,Z. X. Feng,H. Yan,X. R. Wang,C. B. Jiang,J. M. D. Coey,J. M. D. Coey,Allan H. MacDonald +12 more
- Vol. 1, Iss: 3, pp 172-177
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TLDR
The anomalous Hall effect is allowed by symmetry in some non-collinear antiferromagnets and is associated with Bloch-band topological features as discussed by the authors, which is of interest in the development of low power electronic devices, but such devices are likely to demand electrical control over the effect.Abstract:
The anomalous Hall effect is allowed by symmetry in some non-collinear antiferromagnets and is associated with Bloch-band topological features. This topological anomalous Hall effect is of interest in the development of low-power electronic devices, but such devices are likely to demand electrical control over the effect. Here we report the observation of the anomalous Hall effect in high-quality thin films of the cubic non-collinear antiferromagnet Mn3Pt epitaxially grown on ferroelectric BaTiO3 substrates. We demonstrate that epitaxial strain can alter the anomalous Hall conductivity of the Mn3Pt films by more than an order of magnitude. Furthermore, we show that the anomalous Hall effect can be turned on and off by applying a small electric field to the BaTiO3 substrate when the heterostructure is at a temperature of around 360 K and the Mn3Pt is close to the phase transition between a low-temperature non-collinear antiferromagnetic state and a high-temperature collinear antiferromagnetic state. The switching effect is due to piezoelectric strain transferred from the BaTiO3 substrate to the Mn3Pt film by interfacial strain mediation.read more
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Journal Article
Electric-field control of magnetic order above room temperature
TL;DR: Ferroelectricity in BaTiO3 crystals is used to tune the sharp metamagnetic transition temperature of epitaxially grown FeRh films and electrically drive a transition between antiferromagnetic and ferromagnetic order with only a few volts, just above room temperature, correspond to a magnetoelectric coupling larger than previous reports by at least one order of magnitude.
Journal ArticleDOI
Dirac fermions and flat bands in the ideal kagome metal FeSn
Mingu Kang,Linda Ye,Shiang Fang,Jhih-Shih You,Abe Levitan,Minyong Han,Jorge I. Facio,Chris Jozwiak,Aaron Bostwick,Eli Rotenberg,Mun Chan,Ross D. McDonald,David Graf,Konstantine Kaznatcheev,Elio Vescovo,David C. Bell,Efthimios Kaxiras,Jeroen van den Brink,Manuel Richter,Manuel Richter,Madhav Prasad Ghimire,Madhav Prasad Ghimire,Joseph Checkelsky,Riccardo Comin +23 more
TL;DR: It is demonstrated that the bulk Dirac bands arise from in-plane localized Fe-3 d orbitals, and evidence that the coexisting Dirac surface state realizes a rare example of fully spin-polarized two-dimensional Dirac fermions due to spin-layer locking in FeSn is identified.
Journal ArticleDOI
Dirac fermions and flat bands in the ideal kagome metal FeSn
Mingu Kang,Linda Ye,Shiang Fang,Jhih-Shih You,Abe Levitan,Minyong Han,Jorge I. Facio,Chris Jozwiak,Aaron Bostwick,Eli Rotenberg,Mun Chan,Ross D. McDonald,David Graf,Konstantine Kaznatcheev,Elio Vescovo,David C. Bell,Efthimios Kaxiras,Jeroen van den Brink,Manuel Richter,Manuel Richter,Madhav Prasad Ghimire,Madhav Prasad Ghimire,Joseph Checkelsky,Riccardo Comin +23 more
TL;DR: In this paper, an antiferromagnetic single-layer kagome metal with spatially-decoupled KGome planes was examined using polarization and termination-dependent angle-resolved photoemission spectroscopy (ARPES) to detect the momentum-space signatures of coexisting flat bands and Dirac fermions in the vicinity of Fermi energy.
Journal ArticleDOI
Crystal time-reversal symmetry breaking and spontaneous Hall effect in collinear antiferromagnets.
Libor Šmejkal,Libor Šmejkal,Libor Šmejkal,Rafael González-Hernández,Rafael González-Hernández,Tomas Jungwirth,Tomas Jungwirth,Jairo Sinova,Jairo Sinova +8 more
TL;DR: It is illustrated that accounting for the full magnetization density distribution instead of the simplified spin structure sheds new light on symmetry breaking phenomena in magnets and opens an alternative avenue toward low-dissipation nanoelectronics.
Journal ArticleDOI
A Piezoelectric, Strain-Controlled Antiferromagnetic Memory Insensitive to Magnetic Fields
Han Yan,Zexin Feng,Shun Li Shang,Xiaoning Wang,Zexiang Hu,Jinhua Wang,Zengwei Zhu,Hui Wang,Zuhuang Chen,Hui Hua,Wenkuo Lu,Jingmin Wang,Peixin Qin,Huixin Guo,Xiaorong Zhou,Zhaoguogang Leng,Zi Kui Liu,Chengbao Jiang,Michael Coey,Michael Coey,Zhiqi Liu +20 more
TL;DR: In this article, a piezoelectric, strain-controlled antiferromagnetic (AFM) memory has been demonstrated in strong magnetic fields and has potential for low-energy and high-density memory applications.
References
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Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
Paolo Giannozzi,Stefano Baroni,Nicola Bonini,Matteo Calandra,Roberto Car,Carlo Cavazzoni,Davide Ceresoli,Guido L. Chiarotti,Matteo Cococcioni,Ismaila Dabo,A. Dal Corso,Stefano Fabris,Guido Fratesi,S. de Gironcoli,Ralph Gebauer,U. Gerstmann,Christos Gougoussis,Anton Kokalj,Michele Lazzeri,Layla Martin-Samos,Nicola Marzari,Francesco Mauri,Riccardo Mazzarello,Stefano Paolini,Alfredo Pasquarello,Lorenzo Paulatto,Carlo Sbraccia,Sandro Scandolo,Gabriele Sclauzero,Ari P. Seitsonen,Alexander Smogunov,Paolo Umari,Renata M. Wentzcovitch +32 more
TL;DR: Quantum ESPRESSO as discussed by the authors is an integrated suite of computer codes for electronic-structure calculations and materials modeling, based on density functional theory, plane waves, and pseudopotentials (norm-conserving, ultrasoft, and projector-augmented wave).
Journal ArticleDOI
Quantal phase factors accompanying adiabatic changes
TL;DR: In this article, it was shown that the Aharonov-Bohm effect can be interpreted as a geometrical phase factor and a general formula for γ(C) was derived in terms of the spectrum and eigen states of the Hamiltonian over a surface spanning C.
Journal ArticleDOI
Multiferroics: progress and prospects in thin films.
TL;DR: Novel device paradigms based on magnetoelectric coupling are discussed, the key scientific challenges in the field are outlined, and high-quality thin-film multiferroics are reviewed.
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