Journal ArticleDOI
High-Voltage Integrated Circuits: History, State of the Art, and Future Prospects
TLDR
The technologies most commonly used in commercial HVICs, including junction-isolation, thin silicon-on-insulator (SOI), and thick SOI approaches are described.Abstract:
High-voltage ICs (HVICs) are used in many applications, including ac/dc conversion, off-line LED lighting, and gate drivers for power modules. This paper describes the technologies most commonly used in commercial HVICs, including junction-isolation, thin silicon-on-insulator (SOI), and thick SOI approaches. Emerging technologies such as thin silicon membrane are also discussed.read more
Citations
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Journal ArticleDOI
The 2018 GaN power electronics roadmap
Hiroshi Amano,Yannick Baines,Matteo Borga,T Bouchet,Paul R. Chalker,Matthew Charles,Kevin J. Chen,Nadim Chowdhury,Rongming Chu,Carlo De Santi,Maria Merlyne De Souza,Stefaan Decoutere,L. Di Cioccio,Bernd Eckardt,Takashi Egawa,Patrick Fay,Joseph J. Freedsman,Louis J. Guido,Oliver Häberlen,Geoff Haynes,Thomas Heckel,Dilini Hemakumara,Peter A. Houston,Jie Hu,Mengyuan Hua,Qingyun Huang,Alex Q. Huang,Sheng Jiang,Hiroji Kawai,Dan Kinzer,Martin Kuball,Ashwani Kumar,K. B. Lee,Xu Li,Denis Marcon,Martin Marz,Robert McCarthy,Gaudenzio Meneghesso,Matteo Meneghini,Erwan Morvan,Akira Nakajima,Ekkanath Madathil Sankara Narayanan,Stephen Oliver,Tomas Palacios,Daniel Piedra,Marc Plissonnier,Rekha Reddy,Min Sun,Iain G. Thayne,A. Torres,Nicola Trivellin,Vineet Unni,Michael J. Uren,Marleen Van Hove,David J. Wallis,David J. Wallis,Jingshan Wang,Jinqiao Xie,Shuichi Yagi,Shu Yang,Chris Youtsey,Ruiyang Yu,Enrico Zanoni,Stefan Zeltner,Yuhao Zhang +64 more
TL;DR: This collection of GaN technology developments is not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve.
Journal ArticleDOI
GaN-based complementary metal–oxide–semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation-induced holes and electron channels
Akira Nakajima,Shunsuke Kubota,Kazuo Tsutsui,Kuniyuki Kakushima,Hitoshi Wakabayashi,Hiroshi Iwai,Shin Ichi Nishizawa,Hiromichi Ohashi +7 more
TL;DR: In this paper, a P-channel and N-channel MOSFET with normal off operation was realized in a polarisation-junction platform wafer with two-dimensional hole gas and 2D electron gas.
Journal ArticleDOI
A Snapback-Free and Low-Loss Shorted-Anode SOI LIGBT With Self-Adaptive Resistance
Xiaorong Luo,Yang Yang,Sun Tao,Jie Wei,Diao Fan,Ouyang Dongfa,Deng Gaoqiang,Yang Yonghui,Bo Zhang,Zhaoji Li +9 more
TL;DR: A novel 600-V snapback-free and low-loss shorted-anode (SA) silicon on insulator lateral insulated gate bipolar transistor (LIGBT) with self-adaptive resistance (SAR) in anode is proposed and investigated by simulation, named SAR LIGBT.
Journal ArticleDOI
Simulation Study of a Novel Snapback Free Reverse-Conducting SOI-LIGBT With Embedded P-Type Schottky Barrier Diode
TL;DR: In this article, a reverse-conducting lateral insulated gate bipolar transistor (RC-LIGBT) with embedded diode and p-type Schottky Barrier Diode (p-SBD) is proposed.
Proceedings ArticleDOI
A snapback-free shorted-anode SOI LIGHT with multi-segment anode
TL;DR: In this paper, a 600V SOI shorted-anode LIGBT with multi-segment anode (MSA) is proposed and investigated and a compact analytical model is further presented to evaluate the impact of key parameters of the MSA on the snapback voltage (V sb ).
References
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TL;DR: The RESURF (Reduced SURface Field) as discussed by the authors is a diode-based diode structure for high voltage devices with very thin epitaxial or implanted layers, where crucial changes in the electric field distribution occur at or at least near the surface.
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Proceedings ArticleDOI
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Proceedings ArticleDOI
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Y.S. Huang,Bantval Jayant Baliga +1 more
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