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Journal ArticleDOI

Intrinsic stress in sputter-deposited thin films

Henry Windischmann
- 01 Jan 1992 - 
- Vol. 17, Iss: 6, pp 547-596
TLDR
A review of the sputtered film stress literature shows that the intrinsic stress can be tensile or compressive depending on the energetics of the deposition process as discussed by the authors, and extensive experimental evidence show a direct link between the particle flux and energy striking the condensing film, which determines the nature and magnitude of the stress.
Abstract
A review of the sputtered film stress literature shows that the intrinsic stress can be tensile or compressive depending on the energetics of the deposition process. Modeling studies of film growth and extensive experimental evidence show a direct link between the energetics of the deposition process and film microstructure, which in turn determines the nature and magnitude of the stress. The fundamental quantities are the particle flux and energy striking the condensing film, which are a function of many process parameters such as pressure (discharge voltage), target/sputtering gas mass ratio, cathode shape, bias voltage, and substrate orientation. Tensile stress is generally observed in zone 1-type, porous films and is explained in terms of the grain boundary relaxation model, whereas compressive stress, observed in zone T-type, dense films, is interpreted in terms of the atomic peening mechanism. Modeling of the atomic peening mechanism and experimental data indicate that the normalized moment...

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Citations
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Journal ArticleDOI

Effect of Si doping on strain, cracking, and microstructure in GaN thin films grown by metalorganic chemical vapor deposition

TL;DR: In this paper, the effect of Si doping on the strain and microstructure in GaN films grown on sapphire by metalorganic chemical vapor deposition was investigated, and it was found that for a Si concentration of 2×1019 cm−3, the threshold for crack formation during film growth was 2.0 μm.
Journal ArticleDOI

Stress and preferred orientation in nitride-based PVD coatings

TL;DR: In this article, the authors present a brief overview of stress and preferred orientation in nitride-based thin films, either in the form of single-, multi-layered or nanocomposite coatings.
Journal ArticleDOI

Stress and strain in polycrystalline thin films

TL;DR: In this paper, the authors reviewed the results on stress in polycrystalline thin films on substrates and showed that the tensile and compressive stresses in these films are independent and additive.
Journal ArticleDOI

Measurements of stress during vapor deposition of copper and silver thin films and multilayers

TL;DR: In this paper, the authors measured the intrinsic force per unit width (F/w) in the film during and after deposition from the change in substrate curvature measured in situ by a laser scanning technique.
Journal ArticleDOI

On the role of ions in the formation of cubic boron nitride films by ion-assisted deposition

TL;DR: In this paper, the authors investigated how ion irradiation can selectively promote the formation of dense sp3-bonded cubic boron nitride (cBN) over the graphite-like sp2-bunded phases and found that cBN formation best scales with the total momentum of the incident ions.
References
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Journal ArticleDOI

Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline Targets

TL;DR: In this article, an integrodifferential equation for the sputtering yield is developed from the general Boltzmann transport equation, and solutions of the integral equation are given that are asymptotically exact in the limit of high ion energy as compared to atomic binding energies.
Journal ArticleDOI

Mechanical properties of thin films

TL;DR: In this paper, it is shown that very large stresses may be present in the thin films that comprise integrated circuits and magnetic disks and that these stresses can cause deformation and fracture to occur.
Journal ArticleDOI

Influence of apparatus geometry and deposition conditions on the structure and topography of thick sputtered coatings

TL;DR: Two cylindrically symmetric and complementary sputtering geometries, the post and hollow cathodes, were used to deposit thick coatings of various metals (Mo, Cr, Ti, Fe, Cu, and Al-alloy) onto glass and metallic substrates at deposition rates of 1000-2000 A/min under various conditions of substrate temperature, argon pressure, and plasma bombardment as mentioned in this paper.
Book

Thin film phenomena

Journal ArticleDOI

High Rate Thick Film Growth

TL;DR: In this paper, a review of the physical vapor deposition (PVD) of thin films is presented, focusing mainly on evaporation and sputtering processes and the physics of their growth and structure.
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