Journal ArticleDOI
Intrinsic stress in sputter-deposited thin films
TLDR
A review of the sputtered film stress literature shows that the intrinsic stress can be tensile or compressive depending on the energetics of the deposition process as discussed by the authors, and extensive experimental evidence show a direct link between the particle flux and energy striking the condensing film, which determines the nature and magnitude of the stress.Abstract:
A review of the sputtered film stress literature shows that the intrinsic stress can be tensile or compressive depending on the energetics of the deposition process. Modeling studies of film growth and extensive experimental evidence show a direct link between the energetics of the deposition process and film microstructure, which in turn determines the nature and magnitude of the stress. The fundamental quantities are the particle flux and energy striking the condensing film, which are a function of many process parameters such as pressure (discharge voltage), target/sputtering gas mass ratio, cathode shape, bias voltage, and substrate orientation. Tensile stress is generally observed in zone 1-type, porous films and is explained in terms of the grain boundary relaxation model, whereas compressive stress, observed in zone T-type, dense films, is interpreted in terms of the atomic peening mechanism. Modeling of the atomic peening mechanism and experimental data indicate that the normalized moment...read more
Citations
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Journal ArticleDOI
High power pulsed magnetron sputtering: A review on scientific and engineering state of the art
TL;DR: High power pulsed magnetron sputtering (HPPMS) is an emerging technology that has gained substantial interest among academics and industrials alike as discussed by the authors, also known as HIPIMS (high power impulse...
Book
Handbook of physical vapor deposition (PVD) processing
TL;DR: Physical vapor deposition (PVD) process technology from the characterizing and preparing the substrate material, through deposition processing and film characterization, to post-deposition processing is discussed in this paper.
Journal ArticleDOI
Crystallite coalescence: A mechanism for intrinsic tensile stresses in thin films
William D. Nix,Bruce M. Clemens +1 more
TL;DR: In this paper, the authors examined the stress associated with crystallite coalescence during the initial stages of growth in thin polycrystalline films with island growth morphology and predicted large tensile stresses in agreement with experimental results.
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Review of advances in cubic boron nitride film synthesis
TL;DR: A review of recent developments in BN film synthesis and characterization can be found in this paper, where the key experimental parameters controlling cBN film formation and synthesis techniques are discussed and the proposed mechanisms of cBN formation and the observed mechanical and electrical properties of CBN films are analyzed.
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Design and evaluation of tribological coatings
TL;DR: The use of coatings to improve the tribological properties of components such as tools for metal cutting and forming, and machine elements e.g. sliding bearings, seals and valves is constantly increasing.
References
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Journal ArticleDOI
Binary collision cascade prediction of critical ion-to-atom arrival ratio in the production of thin films with reduced intrinsic stress
D.R. Brighton,Graham K. Hubler +1 more
TL;DR: In this paper, a critical ion-to-atom arrival ratio is calculated using the binary collision approximation to simulate collision cascades, and good agreement with data in the literature is obtained by making the assumption that each deposited atom must lie within the volume affected by an ion induced cascade.
Journal ArticleDOI
Plastic flow in ion‐assisted deposition of refractory metals
TL;DR: In this article, an unbalanced magnetron source was used to provide both the depositing atom flux and the argon ion flux at ion-to-atom flux ratios in the range 2-10.
Journal ArticleDOI
Mechanical stresses in silicon oxide films
J. Priest,H.L. Caswell,Y. Budo +2 more
TL;DR: The residual stress in thin films formed by vacuum sublimation of bulk silicon monoxide has been studied as a function of source temperature, residual gases present during deposition, and exposure to atmospheric air after preparation as discussed by the authors.
Journal ArticleDOI
Surface diffusion activation energy determination using ion beam microtexturing
TL;DR: In this paper, the activation energy for impurity atom surface diffusion can be determined from the temperature dependence of the spacing of sputter cones, which are formed on the surface during sputtering while simultaneously adding impurities.
Journal ArticleDOI
Stress in sputtered Mo thin films: The effect of the discharge voltage
TL;DR: In this article, the internal stress in planar magnetron sputtered Mo films was measured and the transition pressure was observed to shift to higher values when the discharge power to the cathode is increased.